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SJPL-L2

SJPL-L2

  • 厂商:

    SANKEN(三垦)

  • 封装:

    SJP

  • 描述:

    DIODE GEN PURP 200V 3A SJP

  • 数据手册
  • 价格&库存
SJPL-L2 数据手册
http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPL-L2 Fast Recovery Diode Jan. 2011 General Description A surface mount device added to 200V_L series. Realizes better space-saving in mounting on a printed circuit Package board by using a surface mount package. Applications ・DC-DC converters ・AC adapter ・High frequency rectification circuit Key Specifications Features ・Super-high speed Fast Recovery Diode ・ Steady operation is possible even at the high temperature by the low leakage current. Item VRM VF IF(AV) trr Unit V V A ns Rating 200 0.98 3.0 35 100mA/200mA IF=3.0A Conditions Typical Characteristics SJPL-L2 IF-VF Characteristics 10 1.0E-04 SJPL-L2 VR-IR Characteristics 1.0E-05 1 1.0E-06 IF ( A) 0.1 I R (A ) 1.0E-07 1.0E-08 0.01 1.0E-09 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VF (V) 1.0E-10 0 50 100 VR (V) 150 200 The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 1 http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPL-L2 Fast Recovery Diode Jan. 2011  Absolute maximum ratings No. 1 2 3 4 5 6 7 Item Transient Peak Reverse Voltage Peak Reverse Voltage Average Forward Current Peak Surge Forward Current I2t Limiting Value Junction Temperature Storage Temperature Symbol Unit Rating Conditions VRSM VRM IF(AV) IFSM I2 t Tj Tstg V V A A A2s °C °C 200 200 3.0 60 18 -40∼+150 -40∼+150 Half sinewave, one shot 1msec≤t≤10msec  Electrical characteristics(Ta=25°C,unless otherwise specified) No. 1 2 3 Item Symbol Unit Value Conditions Forward Voltage Drop Reverse Leakage Current Reverse Leakage Current VF IR H-IR trr1 V uA mA ns ns °C /W 0.98 max. 50 max. 300 max. 50 max. 35 max. 20 max. IF=3.0A VR=VRM VR=VRM, Tj=150°C IF=IRP=100mA 90% Recovery point, Tj=25°C IF=100mA,IRP=200mA 75% Recovery point, Tj=25°C Between Junction and Lead Under High Temperature 4 Reverse Recovery Time trr2 5 Thermal Resistance Rth(j-c) The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use. Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2 http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPL-L2 Fast Recovery Diode Jan. 2011  Characteristics Forward Power Dissipation Forward Power Dissipation PF (W) DC Average Forward Current IF(AV) (A) Reverse Power Dissipation Reverse Power Dissipation PR (W) Reverse Voltage VR (V) Current Derating VR=200V Average Forward Current IF(AV) (A) Lead temperature Tc (℃) Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3 http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPL-L2 Fast Recovery Diode Jan. 2011  Outline drawings, mm  Connection Diagram Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4
SJPL-L2 价格&库存

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