PD = 2 W
Transient Voltage Suppressor Diodes
SJPZ-N Series
Data Sheet
Description
Package
The SJPZ-N series are power Zener diodes designed
for the protection of automotive electronic units,
especially from the surge generated during load dump
conditions and voltage transients induced by inductive
loads. The package of the IC has high dissipation and
high surge capability.
Cathode Mark
SJP
(1)
(2)
Features
● AEC-Q101 Qualified
● Meets the Surge Protection Requirements in
ISO7637-2 Standrard (Pulse 1 to 3)
● Suitable for High Reliability and Automotive
Requirement
● High Surge Capability
● Flammability: Equivalent to UL94V-0
● Bare Lead Frame: Pb-free (RoHS Compliant)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Selection Guide
Applications
Protection of sensitive electronic equipment in
passenger cars, trucks, vans, and buses:
●
●
●
●
●
●
Engine Control Units
Electric Control Units
Braking System
Power Steering System
Airbags
Audio/Infotainment Equipment
Part Number
VZ
Min.
Max.
SJPZ-N18
16.8 V
19.1 V
SJPZ-N27
25.1 V
28.9 V
PRSM*
PD
500 W
2W
SJPZ-N33
31.0 V
35.0 V
*500 μs, single block pulse
Typical Application
Battery
Load
Surge Absorber
SJPZ-N Series
GND
SJPZ-N-DSE Rev.1.5
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1
SJPZ-N Series
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
Absolute Maximum Ratings --------------------------------------------------------------------------------- 3
Electrical Characteristics ------------------------------------------------------------------------------------ 4
SJPZ-N18 Rating and Characteristic Curves ------------------------------------------------------------ 5
SJPZ-N27 Rating and Characteristic Curves ------------------------------------------------------------ 7
SJPZ-N33 Rating and Characteristic Curves ------------------------------------------------------------ 9
Physical Dimensions ----------------------------------------------------------------------------------------- 11
Marking Diagram-------------------------------------------------------------------------------------------- 12
Important Notes ---------------------------------------------------------------------------------------------- 13
SJPZ-N-DSE Rev.1.5
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2
SJPZ-N Series
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Power Dissipation
(1)
PD
Conditions
Lead temperature
Rating
Unit
2
W
(2)
13
DC Blocking Voltage
—
VDC
20
SJPZ-N18
V
25
500 μs, single block pulse
500
W
Junction Temperature
TJ
—
−55 to 150
°C
Storage Temperature
TSTG
—
−55 to 150
°C
1.6 mm
TL
Device
SJPZ-N27
SJPZ-N33
PRSM
Peak Pulse Reverse Power
Remarks
TA
Copper Area
2 mm
25 mm
2 mm
2 mm
Substrate
25 mm
Figure 1.
(1)
(2)
Lead Temperature Measurement Conditions
See Figure 2.
See Figure 1.
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SJPZ-N Series
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
Reverse Leakage Current
Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Breakdown Region Equivalent
Resistance
Thermal Resistance
VF
IR
VZ
rZ
RZ
Rth(J-L)
Conditions
Min.
Typ.
Max.
Unit
IF = 2 A
—
—
1.20
V
VR = 13 V
—
—
1
VR = 20 V
—
—
1
VR = 25 V
—
—
1
SJPZ-N33
1 6 .8
—
19.1
SJPZ-N18
2 5 .1
—
28.9
3 1 .0
—
35.0
SJPZ-N33
—
13
—
SJPZ-N18
—
23
—
—
29
—
SJPZ-N33
—
2
—
SJPZ-N18
—
4
—
—
5
—
—
—
20
IZ = 1 mA
IZ = 1 mA
IZ = 10 mA to 20 mA
(3)
Remarks
SJPZ-N18
µA
V
mV/°C
Ω
SJPZ-N27
SJPZ-N27
SJPZ-N27
SJPZ-N27
SJPZ-N33
°C/W
Mechanical Characteristics
Parameter
Package Weight
(3)
Conditions
Min.
―
Typ.
0.072
Max.
―
Unit
g
Rth(J-L) is thermal resistance between junction and lead. Lead temperature is measured as shown in Figure 1.
SJPZ-N-DSE Rev.1.5
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SJPZ-N Series
SJPZ-N18 Rating and Characteristic Curves
10000
Peak Pulse Reverse Power, PRSM (W)
2.5
Power Dissipation, PD (W)
2.0
1.5
1.0
0.5
1000
100
0.0
0
25
50
75
100
125
10
150
0.1
1
Ambient Temperature, TA (°C)
Figure 2.
10
100
Pulse Width, tP (ms)
SJPZ-N18 Power Dissipation Curve(4)
Figure 3.
SJPZ-N18 Peak Pulse Reverse Power(5)
1000
Thermal Resistance (°C/W)
Rth(J-A)
100
10
Rth(J-L)
1
0.1
10 m
100 m
1
10
100
1000
Pulse Width (s)
Figure 4.
SJPZ-N18 Typical Transient Thermal Resistance Characteristics (6)
(4)
See Figure 1 for the measurement conditions of the lead temperature.
tP is single block pulse.
(6)
See Figure 1 for the measurement conditions of the lead temperature.
(5)
SJPZ-N-DSE Rev.1.5
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SJPZ-N Series
10
1.E-03
Reverse Leakage Current, IR (A)
Forward Current, IF (A)
TA = 150 °C
1
0.1
TA = 100 °C
TA = 25 °C
0.01
TA = −55 °C
0.001
1.E-04
1.E-05
1.E-06
TA = 150 °C
1.E-07
1.E-08
0.0
0.5
1.0
1.5
2.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
Reverse Voltage, VR (V)
Forward Voltage Drop, VF (V)
Figure 5.
SJPZ-N18 Typical Characteristics: IF vs. VF
Figure 6.
20
1
Breakdown Voltage, VZ (V)
Reverse Current, IZ (A)
10
SJPZ-N18 Typical Characteristics: IR vs. VR
0.1
0.01
0.001
10
15
20
25
30
19
18
17
16
-100
SJPZ-N18 Typical Characteristics: IZ vs. VZ
(TJ = 25 °C, t = 0.4 ms)
100
200
Junction Temperature, TJ (°C)
Breakdown Voltage, VZ (V)
Figure 7.
0
Figure 8.
SJPZ-N18 Typical Characteristics: VZ vs. TJ
(IZ = 1 mA)
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SJPZ-N Series
SJPZ-N27 Rating and Characteristic Curves
2.5
Peak Pulse Reverse Power, PRSM (W)
10000
Power Dissipation, PD (W)
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
1000
100
150
10
Ambient Temperature, TA (°C)
0.1
1
10
100
Pulse Width, tP (ms)
Figure 9.
SJPZ-N27 Power Dissipation Curve(7)
Figure 10.
SJPZ-N27 Peak Pulse Reverse Power(8)
1000
Thermal Resistance (°C/W)
Rth(J-A)
100
10
Rth(J-L)
1
0.1
10 m
100 m
1
10
100
1000
Pulse Width (s)
Figure 11.
SJPZ-N27 Typical Transient Thermal Resistance Characteristics (9)
(7)
See Figure 1 for the measurement conditions of the lead temperature.
tP is single block pulse.
(9)
See Figure 1 for the measurement conditions of the lead temperature.
(8)
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SJPZ-N Series
10
1.E-03
TA = 150 °C
Reverse Leakage Current, IR (A)
Forward Current, IF (A)
1.E-04
1
0.1
TA = 100 °C
TA = 25 °C
0.01
TA = −55 °C
0.001
1.E-05
1.E-06
TA = 150 °C
1.E-07
1.E-08
0.0
0.5
1.0
1.5
2.0
0
5
Forward Voltage Drop, VF (V)
Figure 12.
10
15
20
Reverse Voltage, VR (V)
SJPZ-N27 Typical Characteristics: IF vs. VF
Figure 13.
10
SJPZ-N27 Typical Characteristics: IR vs. VR
31
1
Breakdown Voltage, VZ (V)
Reverse Current, IZ (A)
30
0.1
0.01
29
28
27
26
25
0.001
20
25
30
35
40
24
-100
SJPZ-N27 Typical Characteristics: IZ vs. VZ
(TJ = 25 °C, t = 0.4 ms)
100
200
Junction Temperature, TJ (°C)
Breakdown Voltage, VZ (V)
Figure 14.
0
Figure 15.
SJPZ-N27 Typical Characteristics: VZ vs. TJ
(IZ = 1 mA)
SJPZ-N-DSE Rev.1.5
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SJPZ-N Series
SJPZ-N33 Rating and Characteristic Curves
10000
Peak Pulse Reverse Power, PRSM (W)
2.5
Power Dissipation, PD (W)
2.0
1.5
1.0
0.5
1000
100
0.0
0
25
50
75
100
125
150
10
0.1
1
Ambient Temperature, TA (°C)
Figure 16.
10
100
Pulse Width, tP (ms)
SJPZ-N33 Power Dissipation Curve(10)
Figure 17.
SJPZ-N33 Peak Pulse Reverse Power(11)
1000
Thermal Resistance (°C/W)
Rth(J-A)
100
10
Rth(J-L)
1
0.1
10 m
100 m
1
10
100
1000
Pulse Width (s)
Figure 18.
SJPZ-N33 Typical Transient Thermal Resistance Characteristics(12)
(10)
See Figure 1 for the measurement conditions of the lead temperature.
tP is single block pulse.
(12)
See Figure 1 for the measurement conditions of the lead temperature.
(11)
SJPZ-N-DSE Rev.1.5
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9
SJPZ-N Series
10
1.E-03
Reverse Leakage Current, IR (A)
Forward Current, IF (A)
TA = 150 °C
1
0.1
TA = 100 °C
TA = 25 °C
0.01
TA = −55 °C
0.001
1.E-04
1.E-05
1.E-06
TA = 150 °C
1.E-07
1.E-08
0.0
0.5
1.0
1.5
2.0
0
5
15
20
25
Reverse Voltage, VR (V)
Forward Voltage Drop, VF (V)
Figure 19.
10
SJPZ-N33 Typical Characteristics: IF vs. VF
Figure 20.
10
SJPZ-N33 Typical Characteristics: IR vs. VR
37
Breakdown Voltage, VZ (V)
Reverse Current, IZ (A)
36
1
0.1
0.01
35
34
33
32
31
0.001
25
30
35
40
45
30
-100
0
Figure 21.
SJPZ-N33 Typical Characteristics: IZ vs. VZ
(TJ = 25 °C, t = 0.4 ms)
100
200
Junction Temperature, TJ (°C)
Breakdown Voltage, VZ (V)
Figure 22.
SJPZ-N33 Typical Characteristics: VZ vs. TJ
(IZ = 1 mA)
SJPZ-N-DSE Rev.1.5
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10
SJPZ-N Series
Physical Dimensions
● SJP Package
2.15
0.05
+0.1
-0.2
+0.1
-0.05
2.6±0.2
4.5±0.2
1.3±0.4
2.0min.
1.5±0.2
1.3±0.4
+0.4
5.0 -0.1
NOTES:
-
Dimensions in millimeters
Bare lead frame: Pb-free (RoHS compliant)
Moisture Sensitivity Level 1 (MSL 1)
When soldering the products, it is required to minimize the working time within the following limits:
Flow: 260 °C / 10 s, 1 time
Reflow:
Preheat: 150 °C to 200 °C / 60 s to 120 s
Solder heating: 255 °C / 30s, 3 times (260 °C peak)
Soldering Iron: 350 °C / 3.5 s, 1 time
● SJP Land Pattern Example
2.0
2.0
4.0 to 4.2
NOTE:
- Dimensions in millimeters
SJPZ-N-DSE Rev.1.5
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SJPZ-N Series
Marking Diagram
Cathode Mark
Specific Device Code (See Table 1)
YMDD
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N or D)
DD is the day of the month (01 to 31)
Table 1. Specific Device Code
Specific Device Code
Part Number
ZN18
SJPZ-N18
ZN27
SJPZ-N27
ZN33
SJPZ-N33
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SJPZ-N Series
Important Notes
● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of electronic equipment or apparatus (transportation equipment and its
control systems, home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the
Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products
and return them to Sanken. If considering use of the Sanken Products for any applications that require higher reliability (traffic
signal control systems or equipment, disaster/crime alarm systems, etc.), you must contact a Sanken sales representative to discuss
the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken
Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any
applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical
equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class
III or a higher class as defined by relevant laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or
responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from
the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all
such uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any
human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products.
Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
use of the Sanken Products.
● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third
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users or any third party, resulting from the Information.
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the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
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from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the
relevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).
DSGN-AEZ-16003
SJPZ-N-DSE Rev.1.5
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13