SLA4313

SLA4313 NPN Silicon Epitaxial Planar PNP □Absolute maximum ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Base Current Total Power Dissipation Isolation Voltage Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PT VISO Tstg NPN 35 35 6 5 8 （Pw≦1ms, Du≦50%） 1 5 a＝25℃） （T 25 c＝25℃） （T 1000 （Between fin and lead pin, AC） −40 to ＋150 PNP −35 −35 −6 −5 −8 （Pw≦1ms, Du≦50%） −1 （Ta＝25℃） Unit V V V A A A W Vrms ℃ （Ta＝25℃） NPN 10μA max （VCB＝35V） 20mA max （VEB＝6V） 35V min （IC＝25mA） 50min （VCE＝4V, IC＝3A） 0.5V max （IC＝3A, IB＝100mA） 1.3V max （IC＝3A, IB＝100mA） 1.8V max （IF＝2A） PNP −10μA max （VCB＝−35V） −20mA max （VEB＝−6V） −35V min （IC＝−25mA） 50min （VCE＝−4V, IC＝−3A） −0.5V max （IC＝−3A, IB＝−100mA） −1.3V max （IC＝−3A, IB＝−100mA） 1.8V max （IF＝2A） □Electrical characteristics Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VF □Equivalent circuit diagram 10 R 7 □External dimensions（Unit: 31.0 φ3.2±0.15 ±0.2 mm） 24.4±0.2 Ellipse 3.2±0.15×3.8 4.8±0.2 1.7±0.1 16.0±0.2 9.5 min 12 11 2 1 R 3 R: 600Ω 8 9 4 5 2.7 13.0±0.2 0.85 −0.1 1.2±0.15 1.45±0.15 11×P2.54±0.7＝27.94±1.0 ＋0.2  0.55 ＋0.2  −0.1 2.2±0.7 31.5 max 6 1 2 3 4 5 6 7 8 9 10 1112 Pin number Weight: Approx. 6g 98 □Characteristic Curves hFE−IC Temperature Characteristics (Typical NPN) (VCE＝4V) 1000 1000 hFE−IC Temperature Characteristics (Typical PNP) (VCE＝−4V) IC−VBE Temperature Characteristics 4 (Typical NPN) (VCE＝4V) DC Current Gain hFE 500 ＝ Ta 100 50 20 0.02 1 ˚C 25 ˚C 25 Collector Current IC (A) 75˚ C DC Current Gain hFE 500 75˚C 3 100 50 Ta ＝ 5˚C 12 ˚C 25 2 25˚C 1 0.05 0.1 0.5 1 5 10 20 −0.02 −0.05−0.1 −0.5 −1 −5 −10 Ta＝1 Collector Current IC (A) Collector Current IC (A) 0 0 0.5 25˚C 75˚C 1.0 1.5 Base-Emitter Voltage VBE (V) VCE (sat)−IC Temperature Characteristics Collector-Emitter Saturation Voltage VCE(sat) (V) Collector-Emitter Saturation Voltage VCE(sat) (V) 10 VCE(sat)−IC Temperature Characteristics −10 IC−VBE Temperature Characteristics −4 (Typical PNP) (VCE＝−4V)  (Typical NPN) (IC/IB＝10) (Typical PNP) (IC/IB＝10) Collector Current IC (A) 75˚C 0.5 75˚C −0.5 Ta 0 0.2 ＝ 5 12 ˚C −3 ˚C 25 5 10 Ta 0 −0.2 25 ＝1 ˚C C 25˚ −5 Collector Current IC (A) Collector Current IC (A) −1 Ta＝1 VCE (sat)−IB Characteristics   (Typical NPN) VCE (sat)−IB Characteristics   (Typical PNP) Collector-Emitter Saturation Voltage VCE(sat) (V) Collector-Emitter Saturation Voltage VCE(sat) (V) 3 −1.5 0 0 −0.5 25˚C 75˚C −1.0 0.5 1 −0.5 −1 25˚C −2 −1.5 Base-Emitter Voltage VBE (V) 2 −1.0 1 IC＝4A IC＝2A 0 3 5 10 50 100 500 −0.5 IC＝−2A IC＝−1A 0 −2 −5 −10 −50 −100 −500 Base Current IB (mA) Base Current IB (mA) VBE(sat)−IC Temperature Characteristics Base-Emitter Saturation Voltage VBE(sat) (V) Base-Emitter Saturation Voltage VBE(sat) (V) 1.5   (Typical NPN) (IC/IB＝10) −1.5 VBE (sat)−IC Temperature Characteristics (Typical PNP) (IC/IB＝10) 1.0 Ta＝25˚C −1.0 Ta＝25˚C 0.5 125˚C 75˚C −0.5 125˚C 75˚C 0 0.2 0.5 1 5 10 0 −0.2 −0.5 −1 −5 Collector Current IC (A) Collector Current IC (A) 99