SLA5008

SLA5008 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT N channel 100 ±20 ±4 ±8 (PW≤1ms) 15 N-channel + P-channel H-bridge (Ta=25°C) External dimensions A ••• SLA Ratings P channel –100 20 3 6 (PW≤1ms) — Unit V V A A mJ W W °C/W Vrms °C °C 5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C,with all circuits operating, with infinite heatsink) 3.57 1000 (Between fin and lead pin, AC) 150 –40 to +150 θ j-c VISO Tch Tstg * : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 10 7 8 11 2 9 4 5 3 6 Pch 12 Nch 1 Characteristic curves ID-VDS Characteristics (Typical) N-ch 8 10V ID-VGS Characteristics (Typical) P-ch N-ch 8 –10V 25°C ---6 (VDS=10V) 40°C 12 C 5° ---5 –7V 6 7V 6 5 ---4 5 ID (A) ID (A) 4 6V ---3 ID (A) –6V 4 3 3 2 VGS=5V ---2 VGS=–5V 2 1 0 1 0 ---1 0 10 20 ---0 0 ---5 ---10 ---15 ---20 0 2 4 6 TC=– 7 7 8 10 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.8 (VGS=10V) 1.5 P-ch (VGS=–10V) P-ch ---6 (VDS=–10V) 40°C ---5 TC=– 25° 12 5° C 0.6 (Ω) 1.0 ---4 (Ω) 0.4 ID (A) (ON) (ON) ---3 RDS RDS 0.5 ---2 0.2 ---1 0 0 1 2 3 4 5 6 7 8 0 0 –1 –2 –3 –4 –5 –6 ---0 0 ---2 ---4 ---6 C ---8 ---10 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 1.2 ID=4A VGS=10V P-ch 2.0 ID=–3A VGS=–10V 1.0 1.5 (Ω) (ON) (Ω) 1.0 0.8 (ON) 0.6 RDS 0.4 RDS 0.5 0.2 0 --- 40 0 50 100 150 0 –40 0 50 100 150 TC (°C) TC (°C) 42 SLA5008 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr 2.0 1.1 1.7 0.50 180 82 40 40 1.2 250 2.0 0.60 100 ±500 250 4.0 Specifications typ max Unit V nA Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 50V, VGS=–10V, see Fig. 3 on page 16. ISD=4A ISD=±100mA –2.0 0.7 1.1 1.1 180 85 90 80 –4.0 250 –5.5 1.3 Specifications min –100 500 –250 –4.0 typ max P channel Unit V nA Conditions ID=–250µA, VGS=0V VGS= 20V VDS=–100V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–3A VGS=–10V, ID=–3A VDS=–25V, f=1.0MHz, VGS=0V ID=–3A, VDD –50V, VGS=–10V, see Fig. 4 on page 16. ISD=–3A ISD= 100mA (Ta=25°C) µA V S Ω pF pF ns ns V ns µA V S Ω pF pF ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 5 Safe Operating Area (SOA) P-ch (VDS=–10V) (VDS=10V) N-ch 10 ID (pulse) max 5 (TC=25°C) 10 0µ 5 1m ED s 10 s IT m M s Re (yfs) (S) ID (A) 1 1 1 25°C 0.5 0.5 0.5 0.2 0.05 0.1 0.5 1 5 8 0.2 –0.05 –0.1 –0.5 –1 –6 0.1 0.5 RD TC =– Re (yfs) (S) N) 40 °C 12 5° C °C 40 =– °C TC 25 C 5° 12 LI (1 sh (O ot S ) 1 5 10 50 100 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 600 VGS=0V f=1MHz P-ch 700 500 VGS=0V f=1MHz P-ch ---10 ID (pulse) max (TC=25°C) 10 0µ s ---5 Ciss 1m Ciss 10 s Capacitance (pF) D m IT E s Capacitance (pF) (1 M sh ID (A) Coss 50 ---1 50 ---0.5 Crss Crss 10 5 0 10 20 30 40 50 10 5 0 ---10 ---20 ---30 ---40 ---50 ---0.1 ---0.5 ---1 RD S Coss (O 100 N) 100 LI ot ) ---5 ---10 ---50 ---100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 8 7 6 5 PT-Ta Characteristics P-ch 40 35 With Silicone Grease Natural Cooling All Circuits Operating ---6 ---5 30 ---4 IDR (A) IDR (A) PT (W) 25 20 15 W ith fin In 4 3 ---3 0V ite H ea ts in k ---2 2 0V S= –1 –5 10V 5V V S= 10 0V V G 1 0 ---1 5 0 Without Heatsink VG ---0 0 0.5 1.0 1.5 0 ---1 ---2 ---3 ---4 0 50 100 150 VSD (V) VSD (V) Ta (°C) 43