SLA5010

SLA5010 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT N channel 100 ±20 ±4 ±8 (PW≤1ms) 16 N-channel + P-channel 3-phase motor drive (Ta=25°C) External dimensions A ••• SLA Ratings P channel –100 20 3 6 (PW≤1ms) — Unit V V A A mJ W W °C/W °C/W Vrms °C °C 5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.57 (Junction-Case, Tc=25°C, with all circuits operating ) 1000 (Between fin and lead pin, AC) 150 –40 to +150 θ j–a θ j–c VISO Tch Tstg * : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 1 Pch 2 8 3 9 7 11 10 Nch 4 6 5 12 Characteristic curves ID-VDS Characteristics (Typical) N-ch 8 10V ID-VGS Characteristics (Typical) P-ch N-ch 8 –10V TC=–40°C 25°C 125°C –6 (VDS=10V) 7 –5 7 –7V 6 7V 6 5 –4 5 ID (A) ID (A) 4 6V –3 ID (A) –20 –6V 4 3 3 2 VGS=5V –2 VGS=–5V 2 1 0 –1 1 0 –0 0 10 20 0 –5 –10 –15 0 2 4 6 8 10 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.8 (VGS=10V) P-ch 1.5 (VGS=–10V) –6 P-ch TC=–40°C 25°C 125°C (VDS=–10V) –5 0.6 (Ω) (ON) (ON) (Ω) 1.0 –4 RDS RDS 0.4 ID (A) 0.5 0 0 –1 –2 –3 –4 –5 –6 –3 –2 0.2 –1 0 0 1 2 3 4 5 6 7 8 –0 0 –2 –4 –6 –8 –10 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 1.2 ID=4A VGS=10V P-ch 2.0 ID=–3A VGS=–10V 1.0 1.5 (Ω) (ON) (ON) (Ω) 1.0 0.8 0.6 RDS 0.4 RDS 0.5 0.2 0 –40 150 0 50 100 0 –40 0 50 100 150 TC (°C) TC (°C) 46 SLA5010 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr 2.0 1.1 1.7 0.50 180 82 40 40 1.2 250 2.0 0.60 100 ± 500 250 4.0 Specification typ max Unit V nA Conditions ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD 50V, VGS=10V, see Fig. 3 on page 16. ISD=4A, VGS=0V ISD=±100mA –2.0 0.7 1.1 1.1 180 85 90 80 –4.0 250 –5.5 1.3 Specification min –100 500 –250 –4.0 typ max P channel Unit V nA Conditions ID=–250µA, VGS=0V VGS= 20V VDS=–100V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–3A VGS=–10V, ID=–3A VDS=–25V, f=1.0MHz, VGS=0V ID=–3A, VDD –50V, VGS=–10V, see Fig. 4 on page 16. ISD=–3A ISD= 100mA (Ta=25°C) µA V S Ω pF pF ns ns V ns µA V S Ω pF pF ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 5 Safe Operating Area (SOA) P-ch (VDS=–10V) (VDS=10V) N-ch 10 ID (pulse) max 5 (TC=25°C) 10 0µ 5 ED s 1m s 10 Re (yfs) (S) Re (yfs) (S) N) TC 4 =– 1 TC=–40°C 1 ID (A) 1 0.5 25°C 125°C 0.5 0.5 0.2 0.05 0.1 0.5 1 5 8 0.2 –0.05 –0.1 –0.5 –1 –6 0.1 0.5 1 5 10 50 100 ID (A) ID (A) RD 0°C °C 25 C 5° 12 IT m M s LI (1 sh ot (O ) S VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 600 VGS=0V f=1MHz P-ch 700 500 VGS=0V f=1MHz P-ch –10 ID (pulse) max (TC=25°C) 10 0µ s –5 Ciss Ciss 1m Capacitance (pF) ED 10 s Capacitance (pF) IT m LI M s (1 Coss ID (A) 50 50 –1 –0.5 Crss Crss 10 5 0 10 20 30 40 50 10 5 0 –10 –20 –30 –40 –50 –0.1 –0.5 –1 RD S Coss (O N) 100 100 sh ) ot –5 –10 –50 –100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 8 7 6 –4 –6 PT-Ta Characteristics P-ch 40 35 30 ith W With Silicone Grease Natural Cooling All Circuits Operating –5 IDR (A) PT (W) 5 25 20 15 fin In IDR (A) ite 4 3 2 1 0 10V 5V –3 He sin at k –2 –1 0V –5 V S= 10 0V VG 0V –1 VG S= 5 0 Without Heatsink 0 0 0.5 1.0 1.5 0 –1 –2 –3 –4 0 50 100 150 VSD (V) VSD (V) Ta (°C) 47