SLA5022_06

SLA5022 Absolute maximum ratings Symbol VM IO IOP VGSS IB PT Ratings 60 ±6 (PW≤100ms) ±10 (PW≤1ms) ±10 –0.5 5 (Ta=25°C) 35 (Tc=25°C) 25 3.57 1000 (Between fin and lead pin, AC) 150 –40 to +150 PNP Darlington + N-channel MOSFET 3-phase motor drive (Ta=25°C) External dimensions A ••• SLA (12-pin) (Ta=25°C) Electrical characteristics (Sink : N channel MOSFET) Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr Specification min typ max 60 ±500 250 1.0 2.0 3.1 4.6 0.17 0.22 0.25 0.30 400 160 80 50 1.1 1.5 150 Unit V nA µA V S Ω pF pF ns ns V ns Unit V A A V A W °C/W °C/W Vrms °C °C Conditions ID=250µA, VGS=0V VGS=±10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=25V, f=1.0MHz, VGS=0V ID=4A, VDD=30V, VGS=5V ISD=4A, VGS=0V IF=±100mA θ j-a θ j-c VISO Tj Tstg sEquivalent circuit diagram 1 R1 R2 VM 2 8 3 OUT1 9 7 OUT2 10 OUT3 4 6 5 11 12 R1: 3kΩ typ R2: 80Ω typ Characteristic curves (N-channel) VDS-ID Characteristics (Typical) 10 10V VGS-ID Temperature Characteristics (Typical) 10 IDS-RDS(ON) Characteristics (Typical) 0.3 (VDS=10V) 8 4V 8 4V ID (A) 6 3.5V 6 ID (A) (ON) (Ω ) 0.2 4 4 TC=–40°C 25°C RDS VGS=10V 0.1 VGS=3V 2 2 125°C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 8 9 10 VDS (V) VGS (V) ID (A) ID-Re(yfs) Temperature Characteristics (Typical) 10 VDS=10V TC-RDS(ON) Characteristics (Typical) (ID=2.5A) 0.4 VDS-Cpacitance Characteristics (Typical) 1000 Ciss VGS=0V f=1MHz 5 500 °C 4V TC (Ω) =– 40 C 5° 12 Capacitance (pF) 0.3 Re (yfs) (S) Coss (ON) 0.2 VGS=10V 100 1 25°C RDS 50 Crss 0.1 0.5 0.3 0.05 0 –40 0.1 0.5 1 5 10 0 50 100 150 10 0 10 20 30 40 50 ID (A) TC (°C) VDS (V) VSD-IDR Characteristics (Typical) 10 20 Safe Operating Area (SOA) (TC=25°C) s 0µ 10 ID (pulse) max 10 ED 8 M 1m 10 s 5 (O N ) IT m s LI ot sh (1 ) IDR (A) ID (A) 4V VGS=0V 10V 1 4 0.5 2 0 0 0.5 1.0 1.5 0.1 0.5 R 6 D S 1 5 10 50 100 VSD (V) VDS (V) 60 SLA5022 Electrical characteristics (Source: PNP transistor) Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC trr ton tstg tf fT Cob 1.0 1.0 1.4 0.6 120 150 –1 –60 2000 5000 12000 –1.5 –2.0 2.0 V V V Specification min typ max –10 –5 Unit (Ta=25°C) Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–4V, IC=–4A IC=–4A, IB=–10mA IFEC=4A IF=±0.5A VCC –25V, IC=–4A, IB1=–IB2=–10mA VCE=–12V, IE=1A VCB=–10V, f=1MHz µA mA V µs µs µs µs MHz pF Characteristic curves (PNP) IC-VCE Characteristics (Typical) –12 IB=–10mA –5 mA hFE-IC Characteristics (Typical) 20000 hFE-IC Temperature Characteristics (Typical) 20000 10000 (VCE=–4V) (VCE=–4V) –3mA –10 –2mA 10000 typ –8 5000 5000 IC (A) hFE –6 –1mA hFE =1 Ta –4 –0.5mA 1000 1000 °C 25 °C 75 °C 25 –3 0° C –2 500 500 0 0 –2 –4 –6 200 –0.1 –0.5 –1 –5 –10 200 –0.1 –0.5 –1 –5 –10 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) –3 VCE(sat)-IB Characteristics (Typical) –3 IC-VBE Temperature Characteristics (Typical) –12 (IC / IB=1000) (VCE=–4V) –10 VCE (sat) (V) VCE (sat) (V) –2 –2 –8 IC (A) –6 IC=–8A Ta=–30°C –1 75°C 125°C IC=–2A –2 0 –0.1 –0.5 –1 –5 –10 –20 0 –0.3 –0.5 –1 –5 –10 –50 –100 –200 0 0 –1 T a= 125 °C 75° C 25°C –30 °C 25°C –1 IC=–4A –4 –2 –3 IC (A) IB (mA) VBE (V) θ j-a-PW Characteristics 20 –20 Safe Operating Area (SOA) 40 35 30 25 20 15 PT-Ta Characteristics With Silicone Grease Natural Cooling All Circuits Operating 10 –10 10 –5 s 1m ms 10 s 0µ θch-c (°C / W) IC (A) 5 ith W PT (W) ite fin In k sin at He –1 –0.5 10 1 Single Pulse Without Heatsink Ta=25°C 5 0 0 Without Heatsink 0.5 1 5 10 50 100 500 1000 –0.1 –3 –5 –10 –50 –100 PW (mS) VCE (V) 50 100 150 Ta (°C) 61