SLA5060

SLA5060 N-channel + P-channel 3-phase motor drive External dimensions A Absolute maximum ratings SLA (12-pin) (Ta=25°C) Ratings Symbol N channel P channel Unit VDSS 60 –60 V VGSS ±20 ±20 V ID 6 –6 A ID(pulse) 10 (PW≤1ms, duty≤25%) –10 (PW≤1ms, duty≤25%) A , W 5 (Ta=25°C, with all circuits operating, without heatsink) PT ••• 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C ■Equivalent circuit diagram 1 2 8 9 3 7 4 10 6 11 5 12 Characteristic curves ID-VDS Characteristics (Typical) (Ta=25°C) ID-VGS Characteristics (Typical) P-ch ---8 10V 8 –10V 3.7V (Ta=25°C) –4 V 4V ---10 8 4 3.0V –3.5V ---6 6 ID (A) ID (A) 3.3V (VDS=10V) –3.7V 3.5V 6 N-ch 10 –3.3V ---4 ID (A) N-ch 10 Ta=125°C 4 –3.0V 25°C 2.7V 2 ---2 0 VGS=–2.5V 0 0 2 4 6 8 –40°C 2 –2.7V VGS=2.5V 10 0 ---2 ---4 ---6 ---8 0 ---10 0 1 2 VDS (V) VDS (V) 3 4 5 VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch P-ch (Ta=25°C) 0.30 (Ta=25°C) 0.30 P-ch ---10 (VDS=---10V) ---9 0.25 4V 0.15 VGS=10V ---8 ---7 VGS=–4V 0.20 ---6 0.15 ID (A) RDS (ON) (Ω) 0.20 RDS (ON) (Ω) 0.25 –10V ---5 Ta=–40°C ---4 0.10 0.10 0.05 0.05 ---3 25°C ---2 –40°C ---1 0 0 0 0 1 2 3 4 5 6 7 8 9 0 10 ---2 ---4 ID (A) ---6 ---8 ---10 RDS(ON)-TC Characteristics (Typical) (ID=3A) N-ch 0.35 0.30 V = GS 1 RDS (ON) (Ω) RDS (ON) (Ω) 0.25 4V 0.20 0V 0.15 V –4 S= V –10 0.15 0.10 0.05 0.05 0 50 100 150 VG 0.20 0.10 TC (°C) 84 (ID=---3A) 0.30 0.25 0 ---40 P-ch 0.35 0 ---40 0 50 TC (°C) 0 ---1 ---2 ---3 VGS (V) ID (A) 100 150 ---4 ---5 SLA5060 Electrical characteristics (Ta=25°C) N channel Symbol Specification min V(BR)DSS typ max IDSS VTH Re(yfs) Conditions Specification min V ID=100µA, VGS=0V µA VGS=±20V 100 µA VDS=60V, VGS=0V 2.0 V VDS=10V, ID=250µA S VDS=10V, ID=3A 0.22 Ω VGS=4V, ID=3A 1.0 5.5 RDS(ON) Unit ±10 60 IGSS P channel Ciss 320 pF Coss 160 pF Crss 35 pF td(on) 16 ns tr 65 ns td(off) 70 ns tf 45 ns VSD 1.2 V trr 65 ns typ max Unit Conditions V ID=–100µA, VGS=0V ±10 µA VGS=±20V –100 µA VDS=–60V, VGS=0V –2.0 V VDS=–10V, ID=–250µA S VDS=–10V, ID=–3A 0.22 Ω VGS=–10V, ID=–3A –60 –1.0 6 VDS=10V, f=1.0MHz, VGS=0V ID=3A, VDD=20V, RL=6.67Ω, VGS=5V, see Fig. 3 on page 16. ISD=6A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs 790 pF 310 pF 90 pF 40 ns 110 ns 160 ns 80 ns –1.1 V 85 ns VDS=–10V, f=1.0MHz, VGS=0V ID=–3A, VDD=20V, RL=6.67Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–6A, VGS=0V ISD=–3A, VGS=0V, di/dt=100A/µs Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10 (VDS=10V) Safe Operating Area (SOA) P-ch 10 TC=25°C SINGLE PULSE N-ch (VDS=---10V) 20 s 0µ 10 Ta=–40°C 10 0.1 1 IT M LI N) ID (A) (O S RD Re (yfs) (S) Re (yfs) (S) 0.1 –0.05 –0.1 10 s 0.1 0.05 125°C s m 125°C 25°C 1 10 25°C 1 1m ED Ta=–40°C 1 –1 0.1 0.1 –10 1 ID (A) ID (A) 10 Capacitance-VDS Characteristics (Typical) VGS=0V N-ch 2000 VGS=0V P-ch N-ch(Ta=25°C) f=1MHz P-ch (Ta=25°C) f=1MHz 2000 100 VDS (V) 1000 TC=25°C SINGLE PULSE P-ch –20 100µs –10 10 Coss 100 ED IT M LI (O S RD Coss N) ID (A) Capacitance (pF) Ciss s –1 100 Crss Crss 10 0 10 10 20 30 40 50 0 –10 –20 VDS (V) –30 –40 –50 –0.1 –0.1 –1 IDR-VSD Characteristics (Typical) (Ta=25°C) –10 PT-Ta Characteristics P-ch ---10 (Ta=25°C) 40 With Silicon Grease Natural Cooling All Circuits Operating 35 8 –100 VDS (V) VDS (V) N-ch 10 ---8 PT (W) –1 S= IDR (A) 0V 0V 15 k VG in ts ---2 20 ea 2 V –4 H ---4 ite 4 fin 0V S= 25 ---6 In VG 4V ith 6 W –1 0V 30 IDR (A) Capacitance (pF) m 1000 s 1m Ciss 10 Without Heatsink 5 0 0 0.5 1.0 VSD (V) 1.5 0 0 0 ---0.5 ---1.0 VSD (V) ---1.5 0 50 100 150 Ta (°C) 85 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 C1.5 ± 0.5 4.0 ± 0.2 4 5 6 7 1 E 8 2 B 3 C 4 B 5 C 6 B 7 C 8 9 10 B C E • SIP 15 (SMA15Pin) 4.0 ± 0.2 31.0 ± 0.2 4.0 ± 0.2 2.5 ± 0.2 b a R-End (10.4) 2.4 a 1.46 ± 0.15 0.65 +0.2 0.85 ‒0.1 2.54 0.55 27.94 +0.2 ‒0.1 1.2 2.5 ± 0.2 b 10.2 ± 0.2 31.0 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 ± 0.1 +1.0 Pin No. • SIP 12 (SMA12Pin) 3 9.7 ‒0.5 2 (3.0) 6.7 ± 0.5 0.5 ± 0.15 7 ×P2.54 = 17.78 1.2 ± 0.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 10.2 ± 0.2 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 +0.2 ‒0.1 ± 0.7 a: Part Number b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 15 with Fin (SLA15Pin) 1.7 ± 0.1 13.0 a 2.45 ± b Pin1 12 +0.2 0.65 ‒0.1 +0.2 1.2 1.45 ± 0.15 ± 0.15 11 × P2.54 ± 0.7= 27.94 ± 1.0 0.85 ‒0.1 0.55 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * 4.8 ± 0.2 +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 16.4 1.7 ± 0.1 13.0 ± 0.2 4.8 ± 0.2 9.9 ± 0.2 ± 0.2 24.4 ± 0.2 ± 0.2 R-End 2.7 9.5min 16.0± 0.2 φ 3.2 31.0 ± 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 24.4 ± 0.2 Ellipse 3.2 ± 0.15×3.8 ± 0.2 16.0 ± 0.2 31.5max 31.3 ± 0.2 0.15 9.7 ‒0.5 φ 3.2 ± (3.0) 6.7 ± 0.5 • SIP 12 with Fin (SLA12Pin) +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)