SLA5061

SLA5061 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) PT N channel 60 ±20 10 15 (PW≤1ms, duty≤25%) N-channel+P-channel 3-phase motor drive External dimensions A (Ta=25°C) ••• SLA (12-pin) Ratings P channel –60 ± 20 –6 –15 (PW≤1ms, duty≤25%) Unit V V A A W W °C/W °C/W Vrms °C °C 5 (Ta=25°C, with all circuits operating, without heatsink) 40 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.125 (Junction-Case, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150 θ j-a θ j-c VISO Tch Tstg sEquivalent circuit diagram 1 2 3 4 8 7 6 9 10 11 5 12 Characteristic curves ID-VDS Characteristics (Typical) 15 10V ID-VGS Characteristics (Typical) P-ch (Ta=25°C) –4.0V N-ch (Ta=25°C) 4.0V –15 –14 –10V 15 14 12 10 N-ch (VDS=10V) 14 12 10 –12 –10 3.5V ID (A) 8 3.3V ID (A) ID (A) –3.5V –8 –3.3V 8 6 6 4 2 0 3.0V –6 –4 –2 0 –3.0V TC=125°C 25°C –40°C 4 2 0 VGS=2.7V VGS=–2.7V 0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.20 0.18 0.16 0.14 Ta=25°C VGS=4V P-ch 0.20 0.18 0.16 0.14 Ta=25°C VGS=–10V –15 –14 –12 –10 P-ch (VDS=–10V) RDS (ON) (Ω) ID (A) 0.12 0.10 0.08 0.06 0.04 0.02 0 0 1 234 5 6 7 8 9 10 11 12 13 14 15 RDS (ON) (Ω) 0.12 0.10 0.08 0.06 0.04 –8 –6 –4 25°C TC=125°C –2 0.02 0 0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10 –11 –12–13–14–15 –40°C 0 0 –1 –2 –3 –4 –5 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 0.20 0.18 0.16 0.14 ID=5A VGS=4V 0.20 0.18 0.16 0.14 P-ch ID=–5A VGS=–10V RDS (ON) (Ω) RDS (ON) (Ω) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 ---40 0 50 100 150 0.12 0.10 0.08 0.06 0.04 0.02 0.00 ---40 0 50 100 150 TC (°C) TC (°C) 86 SLA5061 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr 460 225 50 25 110 90 55 1.15 75 1.0 8 0.14 60 ±10 100 2.0 Specification typ max Unit V Conditions ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V 1200 440 120 50 170 180 100 –1.25 100 –1.0 8.7 0.14 Specification min –60 10 –100 –2.0 typ max P channel Unit V Conditions ID=–100µA, VGS=0V VGS=±20V VDS=–60V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–5A VGS=–10V, ID=–5A VDS=–10V, f=1.0MHz, VGS=0V (Ta=25°C) µA µA V S Ω pF pF pF ns ns ns ns V ns µA µA V S Ω pF pF pF ns ns ns ns V ns ID=5A, VDD 20V, RL=4Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=5A, VGS=0V di/dt=100A/µs ID=–5A, VDD 20V, RL=4Ω, VGS=–5V see Fig. 4 on page 16. ISD=–10A, VGS=0V ISD=–5A, VGS=0V di/dt=100A/µs Characteristic curves Re(yfs)-ID Characteristics (Typical) 20 10 Safe Operating Area (SOA) P-ch (VDS=–10V) 20 10 s 1m N-ch (VDS=10V) 20 10 N-ch TC=25°C SINGLE PULSE 100µs IT ED 10 Re (yfs) (S) Re (yfs) (S) M m LI s 1 25°C 125°C 1 125°C 1 0.1 0.05 0.1 1 10 20 0.1 –0.05 –0.1 –1 –10 –20 ID (A) ID (A) 0.1 0.1 RD TC=–40°C 25°C ID (A) S (O N) TC=–40°C 1 10 100 VDS (V) TC=25°C SINGLE PULSE 100ms 1m Capacitance-VDS Characteristics (Typical) 5000 N-ch N-ch a=25°C) f=1MHz (T VGS=0V 5000 P-ch P-ch VGS=0V (Ta=25°C) f=1MHz P-ch –20 –10 s 10 ED Capacitance (pF) Ciss m Coss –1 100 100 Crss Crss 10 10 0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –0.1 RD Coss ID (A) S (O N) Ciss LI M IT 1000 Capacitance (pF) 1000 s –1 –10 –100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) 15 14 13 12 11 10 V PT-Ta Characteristics P-ch (Ta=25°C) 40 35 30 ith W With Silicon Grease Natural Cooling All Circuits Operating N-ch (Ta=25°C) –15 –14 –13 –12 –11 –10 10 S= 4V IDR (A) 8 7 6 5 4 3 2 1 0 0 IDR (A) –8 –7 –6 –5 –4 –3 –2 –1 0 0V –4 V VG –1 S= 0V PT (W) 9 VG –9 25 20 15 0V ite fin In k sin at He 10 Without Heatsink 5 0 0 –0.5 –1.0 –1.5 0.5 1.0 1.5 VSD (V) 0 50 100 150 VSD (V) Ta (°C) 87