SMA4021
PNP Darlington
With built-in flywheel diode
Electrical characteristics
(Ta=25°C)
Symbol
Ratings
Unit
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
IF
IFSM
VR
–60
–60
–6
–3
–6 (PW≤1ms, Du≤50%)
–0.5
–6 (PW≤0.5ms, Du≤25%)
–8 (PW≤10ms, Single pulse)
100
4 (Ta=25°C)
20 (Tc=25°C)
150
–40 to +150
V
V
V
A
A
A
A
A
V
ICBO
IEBO
VCEO
hFE
VCE(sat)
VBE(sat)
Tj
Tstg
VR
VF
IR
trr
W
°C
°C
7
IC=–2A, IB=–4mA
(Ta=25°C)
Unit
Conditions
V
V
µA
ns
IR=10µA
IF=1A
VR=100V
IF=±100mA
D
ew
10
9
11
R1: 2kΩ typ R2: 150Ω typ
fo
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
A
–1.5m
en
hFE
m
75˚C
100
–6
–0.05 –0.1
–0.5
–1
50
–0.03
–5 –6
IC (A)
VCE(sat)-IC Temperature Characteristics (Typical)
–1
(VCE=–4V)
–3
–6
–4
IC (A)
VCE (sat) (V)
Ta=–30°C
75°C
–2
25°C
–3
IC=–4A
IC=–2A
–1
–1
–2
IC=–1A
125°C
–1
–1
0
–0.2
–5 –6
–0.5 –1
IC (A)
θ j-a-PW Characteristics
20
–5
–10
–50
0
–100
0
–1
–2
VBE (V)
PT-Ta Characteristics
Safe Operating Area (SOA)
20
–10
10
0µ
s
m
s
–1
ts
ea
IC (A)
eH
ink
PT (W)
init
10
5
s
Inf
5
1m
10
ith
W
15
10µs
–5
1
–3
IB (mA)
10
θ j–a (°C / W)
–5 –6
IC-VBE Temperature Characteristics (Typical)
R
ot
75°C
N
–0.5
–5
25°C
0
–0.5
–0.05 –0.1
IC (A)
VCE(sat)-IB Characteristics (Typical)
(IC / IB=1000)
–3
100
50
–0.03
ec
o
–5
0˚
–30°C
–4
C
–3
500
25˚C
m
–3
VCE (V)
1000
500
°C
IC (A)
–2
˚C
25
=1
Ta
1000
–2
0
5000
hFE
IB=–2
–1.0mA
–0.9mA
–0.8mA
–4
(VCE=–4V)
10000
typ
de
5000
A
–1.2m
–1
d
A
.2mA
m
–1.8
hFE-IC Temperature Characteristics (Typical)
(VCE=–4V)
10000
–6
Ta=125
4
3
2
12
8
5
VCE (sat) (V)
VCB=–60V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–2A
rN
1
–2
Conditions
µA
mA
V
V
V
Specification
min
typ
max
100
1.2
10
100
R1 R2
0
Unit
●Diode for flyback voltage absorption
■Equivalent circuit diagram
6
(Ta=25°C)
Specification
min
typ
max
–10
–10
–60
2000
5000
12000
–1.5
–2.0
Symbol
SMA
es
ig
PT
•••
ns
Absolute maximum ratings
External dimensions B
Without Heatsink
–0.5
–0.1
Single Pulse
–0.05 Without Heatsink
0.5
1
5
10
50
PW (mS)
100
500 1000
0
–40
0
50
Ta (°C)
100
150
–0.03
–3
Ta=25°C
–5
–10
–50
–100
VCE (V)
123
Package Type (Dimensions)
• SIP 8 (STA8Pin)
• SIP 10 (STA10Pin)
20.4 max
9.0 ± 0.2
11.3 ± 0.2
b
a
0.5 ± 0.15
ns
C1.5 ± 0.5
1
E
8
+0.2
‒0.1
ew
10.2 ± 0.2
+0.2
‒0.1
*
1.15
*
14 ×P2.03 ± 0.7= 28.42 ±1.0
de
en
m
R
ot
1.45
± 0.15
* 4.0
• SIP 15 with Fin (SLA15Pin)
φ 3.2 ±
31.3 ± 0.2
0.15
φ 3.2 ± 0.15×3.8
31.0 ± 0.2
16.4
± 0.2
N
11 × P2.54 ± 0.7= 27.94 ± 1.0
1.7 ± 0.1
13.0 ± 0.2
9.9 ± 0.2
2.45 ±
R-End
+0.2
0.55
4.8 ± 0.2
± 0.2
1.7 ± 0.1
± 0.2
12
0.85 ‒0.1
± 0.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
24.4 ± 0.2
0.65 ‒0.1
+0.2
± 0.15
+0.2
0.55 ‒0.1
+0.2
‒0.1
b
Pin1
2.5 ± 0.2
+1.0
R-End
ec
o
13.0
a
4.8
m
24.4 ± 0.2
± 0.2
2.7
Ellipse
3.2 ± 0.15×3.8
4.0 ± 0.2
D
1.2
± 0.1
a: Part Number
b: Lot No.
31.0
8 9 10
B C E
d
0.55
27.94
± 0.2
7
C
b
0.65
+0.2
0.85 ‒0.1
31.5max
6
B
a
fo
1.46 ± 0.15
• SIP 12 with Fin (SLA12Pin)
5
C
rN
2.4
a
(10.4)
10.2 ± 0.2
2.5 ± 0.2
2.54
16.0± 0.2
4
B
31.0 ± 0.2
4.0 ± 0.2
b
9.5min
3
C
• SIP 15 (SMA15Pin)
31.0 ± 0.2
1.2
2
B
9.7 ‒0.5
7
(3.0) 6.7 ± 0.5
6
+0.2
‒0.1
a: Part Number
b: Lot No.
2.2
± 0.7
*
14 ×P2.03
± 0.7
*
+0.2
=28.42
± 1.0
1.15 ‒0.1
0.2
+1.0
5
9.7 ‒0.5
4
16.0
Pin No.
3
es
ig
4.0 ± 0.2
2
(3.0) 6.7 ± 0.5
1.2 ± 0.2
0.5 ± 0.15
7 ×P2.54 = 17.78
• SIP 12 (SMA12Pin)
φ 3.2
a: Part Number
b: Lot No.
9 × 2.54 = 22.86 ± 0.25
C1.5 ± 0.5
1
± 0.15
(2.54)
0.5 ± 0.15
(2.54)
0.5 ± 0.15
4.0 ± 0.2
1.0 ± 0.25
1.0 ± 0.25
1.2 ± 0.2
4.7 ± 0.5
4.7 ± 0.5
9.0 ± 0.2
11.3 ± 0.2
2.5 max
2.3 ± 0.2
25.25 ± 0.2
+0.2
0.55 ‒0.1
* 4.0 ± 0.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
• SIP 21 with Fin (SLA21Pin)
31.0 ± 0.2
24.4 ± 0.2
16.4 ± 0.2
φ 3.2 ± 0.15× 3.8
4.8 ±
1.7 ±
17.9 ±
(5)
b
12.9 ± 0.2
a
16± 0.2
0.15
9.9 ± 0.2
φ 3.2 ±
0.6
Gate burr
0.2
0.1
2.45 ±
0.2
4‒(R1)
+0.2
0.5
0.65 ‒0.1
3±
20 ×P1.43± 0.5 =28.6± 1.0
31.3 ± 0.2
1
190
2
Transistors
3
4
5
6
7
9 11 13 15 17 19 21
8 10 12 14 16 18 20
a: Part Number
b: Lot No.
+0.2
0.55 ‒0.1
4
± 0.7
(Unit:mm)
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