SMA4032

SMA4032 Absolute maximum ratings NPN Darlington With built-in flywheel diode Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR 120 100 6 3 5 (PW≤1ms, Du≤50%) 0.2 3 (PW≤0.5ms, Du≤25%) 5 (PW≤10ms, Single pulse) 120 4 (Ta=25°C) 20 (Tc=25°C) 150 –40 to +150 V V V A A A A A V ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf fT Cob Tj Tstg W °C °C 12 8 5 1 VR VF IR trr 10 11 9 4 3 Unit Conditions µA mA V VCB=120V VEB=6V IC=25mA VCE=4V, IC=1.5A V V µs µs µs MHz pF Specification min typ max 120 1.6 10 100 Symbol SMA (Ta=25°C) Specification min typ max 10 10 100 2000 6000 15000 1.1 1.5 1.7 2.0 0.5 2.2 0.9 40 30 IC=1.5A, IB=3mA VCC 30V, IC=1.5A, IB1=–IB2=3mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz ●Diode for flyback voltage absorption ■Equivalent circuit diagram 2 ••• Electrical characteristics (Ta=25°C) Symbol PT External dimensions B (Ta=25°C) Unit Conditions V V µA ns IR=10µA IF=1A VR=120V IF=±100mA R1 R2 7 6 R1: 3kΩ typ R2: 200Ω typ Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical) (VCE=4V) 5 20000 2m 1m A (VCE=4V) 20000 75°C typ 10000 0.6mA 10000 25°C 5000 mA 4 A 5000 IB=10 0.4mA IC (A) 3 °C 25 =1 Ta 2 hFE hFE 0.3mA 1000 1000 500 C 0° –3 500 1 100 0 0 1 2 3 4 5 100 50 0.03 0.05 6 0.1 0.5 1 50 0.03 5 IC (A) VCE (V) VCE(sat)-IC Temperature Characteristics (Typical) 1 5 IC-VBE Temperature Characteristics (Typical) (VCE=4V) 5 3 3 0.5 IC (A) VCE(sat)-IB Characteristics (Typical) (IC / IB=1000) 0.05 0.1 4 2 IC=1A 125°C 0 0.5 1 1 0 0 0.1 5 IC (A) 0.5 θ j-a-PW Characteristics 1 IB (mA) 5 10 50 0 1 2 3 VBE (V) PT-Ta Characteristics 20 –30°C 1 °C 1 IC=3A IC=1.5A 125 75°C Ta=–30°C 25°C 3 Ta= 25°C 2 IC (A) VCE (sat) (V) VCE (sat) (V) 75°C 2 Safe Operating Area (SOA) 20 10 10 0µ s 5 10 s Inf 1m ith tsin k 5 1 IC (A) ea PT (W) eH 10 Without Heatsink s m 10 init θ j–a (°C / W) W 15 5 1 0.5 0.1 Single Pulse 0.05 Without Heatsink 0.5 0 5 10 50 PW (mS) 100 500 1000 0 –40 0 50 Ta (°C) 100 150 0.03 3 Ta=25°C 5 10 VCE (V) 50 100 125 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 C1.5 ± 0.5 4.0 ± 0.2 4 5 6 7 1 E 8 2 B 3 C 4 B 5 C 6 B 7 C 8 9 10 B C E • SIP 15 (SMA15Pin) 4.0 ± 0.2 31.0 ± 0.2 4.0 ± 0.2 2.5 ± 0.2 b a R-End (10.4) 2.4 a 1.46 ± 0.15 0.65 +0.2 0.85 ‒0.1 2.54 0.55 27.94 +0.2 ‒0.1 1.2 2.5 ± 0.2 b 10.2 ± 0.2 31.0 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 ± 0.1 +1.0 Pin No. • SIP 12 (SMA12Pin) 3 9.7 ‒0.5 2 (3.0) 6.7 ± 0.5 0.5 ± 0.15 7 ×P2.54 = 17.78 1.2 ± 0.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 10.2 ± 0.2 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 +0.2 ‒0.1 ± 0.7 a: Part Number b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 15 with Fin (SLA15Pin) 1.7 ± 0.1 13.0 a 2.45 ± b Pin1 12 +0.2 0.65 ‒0.1 +0.2 1.2 1.45 ± 0.15 ± 0.15 11 × P2.54 ± 0.7= 27.94 ± 1.0 0.85 ‒0.1 0.55 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * 4.8 ± 0.2 +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 16.4 1.7 ± 0.1 13.0 ± 0.2 4.8 ± 0.2 9.9 ± 0.2 ± 0.2 24.4 ± 0.2 ± 0.2 R-End 2.7 9.5min 16.0± 0.2 φ 3.2 31.0 ± 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 24.4 ± 0.2 Ellipse 3.2 ± 0.15×3.8 ± 0.2 16.0 ± 0.2 31.5max 31.3 ± 0.2 0.15 9.7 ‒0.5 φ 3.2 ± (3.0) 6.7 ± 0.5 • SIP 12 with Fin (SLA12Pin) +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)