SMA5106

SLA4061 NPN Darlington Absolute maximum ratings (Ta=25°C) With built-in flywheel diode Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR 120 120 6 5 8 (PW≤1ms, Du≤50%) 0.5 5 (PW≤0.5ms, Du≤25%) 8 (PW≤10ms, single) 120 5 (Ta=25°C) 25 (Tc=25°C) 1000 (Between fin and lead pin, AC) 150 –40 to +150 5 V V V A A A A A V ICBO IEBO VCEO hFE VCE(sat) VBE(sat) ton tstg tf VR VF IR trr fo IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) mA 20000 0.5mA IR=10µA IF=1A VR=120V IF=±100mA typ 5000 en 3 m 500 3 4 VCE(sat)-IC Temperature Characteristics (Typical) 500 0° –3 100 100 50 50 20 0.02 5 ec o VCE (V) m 2 hFE hFE IC (A) 1 °C 25 =1 Ta °C 5 7 C ° 25 1000 1000 2 (VCE=2V) 20000 5000 0.4mA 0.05 0.5 0.1 1 20 0.02 5 0.05 C 0.1 0.5 1 5 IC (A) IC (A) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC / IB=1000) (VCE=2V) 5 3 R IC=5A 2 IC=3A 1 –30°C 25°C 75°C 3 Ta= N Ta=–30°C 2 IC (A) VCE (sat) (V) ot 4 125 °C 75°C 25°C 2 VCE (sat) (V) Conditions V V µA ns 10000 de I B= 2 10000 4 1 Unit hFE-IC Temperature Characteristics (Typical) (VCE=2V) 0.6mA d 1mA 0.8mA 0.7mA 1 (Ta=25°C) D R1: 2.5kΩ typ R2: 200Ω typ Characteristic curves 0 0 VCC 30V, IC=3A, IB1=–IB2=3mA ew 7 5 IC=3A, IB=3mA rN R1 R2 6 VCB=120V VEB=6V IC=25mA VCE=2V, IC=3A ns Symbol Vrms °C °C °C/W 12 8 5 IC=1A 125°C 1 0 0.5 1 0 0.2 5 IC (A) 0.5 θ j-a-PW Characteristics 1 5 10 IB (mA) 0 0 50 PT-Ta Characteristics 20 µs 100 5 10 k 10 0× tsin Without Heatsink ea 5 1 eH PT (W) init θ j–a (°C / W) Inf ms ith 10 0× s 1m W 15 10 1 3 Safe Operating Area (SOA) With Silicone Grease Natural Cooling Heatsink: Aluminum in mm 20 5 2 10 25 10 1 VBE (V) IC (A) 1 Conditions µA mA V V V µs µs µs Specification min typ max 120 1.2 10 100 10 11 9 4 3 Unit ●Diode for flyback voltage absorption W ■Equivalent circuit diagram 2 SLA (12-pin) (Ta=25°C) Specification min typ max 10 10 120 2000 5000 15000 1.0 1.5 1.6 2.0 0.5 5.5 1.5 es ig VISO Tj Tstg θ j-c ••• Electrical characteristics Symbol PT External dimensions A 0.5 2 50 ×50 ×2 0.1 Single Pulse 0.05 Without Heatsink 0.5 1 5 10 50 100 PW (mS) 500 1000 0 –40 0 50 Ta (°C) 100 150 0.03 Ta=25°C 3 5 10 50 100 200 VCE (V) 23 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 ns C1.5 ± 0.5 1 E 8 +0.2 ‒0.1 ew 10.2 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 de en m R ot 1.45 ± 0.15 * 4.0 • SIP 15 with Fin (SLA15Pin) φ 3.2 ± 31.3 ± 0.2 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 16.4 ± 0.2 N 11 × P2.54 ± 0.7= 27.94 ± 1.0 1.7 ± 0.1 13.0 ± 0.2 9.9 ± 0.2 2.45 ± R-End +0.2 0.55 4.8 ± 0.2 ± 0.2 1.7 ± 0.1 ± 0.2 12 0.85 ‒0.1 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 24.4 ± 0.2 0.65 ‒0.1 +0.2 ± 0.15 +0.2 0.55 ‒0.1 +0.2 ‒0.1 b Pin1 2.5 ± 0.2 +1.0 R-End ec o 13.0 a 4.8 m 24.4 ± 0.2 ± 0.2 2.7 Ellipse 3.2 ± 0.15×3.8 4.0 ± 0.2 D 1.2 ± 0.1 a: Part Number b: Lot No. 31.0 8 9 10 B C E d 0.55 27.94 ± 0.2 7 C b 0.65 +0.2 0.85 ‒0.1 31.5max 6 B a fo 1.46 ± 0.15 • SIP 12 with Fin (SLA12Pin) 5 C rN 2.4 a (10.4) 10.2 ± 0.2 2.5 ± 0.2 2.54 16.0± 0.2 4 B 31.0 ± 0.2 4.0 ± 0.2 b 9.5min 3 C • SIP 15 (SMA15Pin) 31.0 ± 0.2 1.2 2 B 9.7 ‒0.5 7 (3.0) 6.7 ± 0.5 6 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 5 9.7 ‒0.5 4 16.0 Pin No. 3 es ig 4.0 ± 0.2 2 (3.0) 6.7 ± 0.5 1.2 ± 0.2 0.5 ± 0.15 7 ×P2.54 = 17.78 • SIP 12 (SMA12Pin) φ 3.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 ± 0.15 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)