SMA5125

SMA5125 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) PT N channel 60 ±20 10 15 (PW≤1ms, duty≤25%) N-channel + P-channel 3-phase motor drive (Ta=25°C) External dimensions B ••• SMA Ratings P channel –60 ±20 –10 –15 (PW≤1ms, duty≤25%) Unit V V A A W W °C/W °C/W °C °C 4 (Ta=25°C, with all circuits operating, without heatsink) 30 (Tc=25°C,with all circuits operating, with infinite heatsink) 31.25 (Junction-Air, Ta=25°C, with all circuits operating) 4.166 (Junction-Case, Tc=25°C, with all circuits operating) 150 –40 to +150 θ j-a θ j-c Tch Tstg sEquivalent circuit diagram 5 12 4 3 2 6 7 8 11 10 9 1 Characteristic curves ID-VDS Characteristics (Typical) N-ch 15 14 10V ID-VGS Characteristics (Typical) P-ch (Ta=25°C) –4.0V (Ta=25°C) 4.0V N-ch 15 14 12 10 –15 –14 –12 –10 –10V (VDS=10V) 12 10 3.5V ID (A) 8 3.3V ID (A) –3.5V ID (A) –8 –3.3V 8 6 6 4 2 0 0 3.0V –6 –4 –2 0 2 4 6 8 10 –3.0V 4 2 0 0 1 2 3 4 5 Tc=125°C 25°C –40°C VGS=2.7V VGS=–2.7V 0 –2 –4 –6 –8 –10 VDS (V) VDS (V) Ta=25°C VGS=4V VGS (V) Ta=25°C VGS=–10V RDS(ON)-ID Characteristics (Typical) P-ch 0.20 N-ch 0.20 P-ch –15 –14 (VDS=–10V) 0.16 (ON) (Ω) (ON) (Ω) 0.16 –12 –10 ID (A) 0.12 0.12 –8 –6 –4 Tc=40°C 25°C –40°C RDS RDS 0.08 0.08 0.04 0.04 –2 0 0 2 4 6 8 10 12 14 15 0 0 –2 –4 –6 –8 –10 –12 –14 –15 0 0 –1 –2 –3 –4 –5 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 0.20 ID=5A VGS=4V P-ch 0.20 ID=–5A VGS=–10V 0.16 (ON) (Ω) (ON) (Ω) 0.16 0.12 0.12 RDS 0.08 RDS 0 50 100 150 0.08 0.04 0.04 0 –40 TC (°C) 0 –40 0 TC (°C) 50 100 150 144 SMA5125 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr 460 225 50 25 110 90 55 1.15 75 1.0 8.0 0.14 60 ±10 100 2.0 Specification typ max Unit V Conditions ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=4V, ID=5A VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 20V, RL=4Ω, VGS=5V, RG=50Ω, see Fig.3 on page 16. ISD=10A, VGS=0V ISD=5A, di/dt=100A/µs 1200 440 120 50 170 180 100 –1.25 100 –1.0 8.7 0.14 Specification min –60 ±10 –100 –2.0 typ max P channel Unit V Conditions ID=–100µA, VGS=0V VGS=±20V VDS=–60V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–5A VGS=–10V, ID=–5A VDS=–10V, f=1.0MHz, VGS=0V ID=–5A, VDD –20V, RL=4Ω, VGS=–5V, RG=50Ω, see Fig.4 on page 16. ISD=–10A, VGS=0V ISD=–5A, di/dt=100A/µs (Ta=25°C) µA µA V S Ω pF pF pF ns ns ns ns ns V µA µA V S Ω pF pF pF ns ns ns ns V ns Characteristic curves Re(yfs)-ID Characteristics (Typical) 20 10 Safe Operating Area (SOA) P-ch (VDS=–10V) 20 10 1m N-ch (VDS=10V) 20 10 N-ch 100µs ED s M Re (yfs) (S) Tc=–40°C Tc=40°C IT 10 ms Re (yfs) (S) 1 25°C ID (A) 25°C 1 125°C 1 125°C 0.1 0.05 0.1 1 10 20 ID (A) 0.1 –0.05 –0.1 –1 –10 –20 0.1 0.1 Single Pulse Tc=25°C RD S (O N) LI 1 10 100 ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 5000 VGS=0V (Ta=25°C) f=1MHz P-ch 5000 VGS=0V (Ta=25°C) f=1MHz P-ch –20 –10 100µs s 1m ED Ciss 10 M IT 1000 Capacitance (pF) 1000 m s Capacitance (pF) Coss ID (A) Coss –1 100 100 Crss Crss Single Pulse Tc=25°C 10 0 10 20 30 40 50 10 0 –10 –20 –30 –40 –50 –0.1 –0.1 RD S (O Ciss N) LI –1 –10 –100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 15 14 12 10 V PT-Ta Characteristics P-ch (Ta=25°C) 40 35 (Ta=25°C) –15 –14 –12 All Circuits Operating 30 VG 10 –10 S= IDR (A) IDR (A) 4V 25 PT (W) –1 0V 8 0V –8 –6 –4 –2 0 0.0 VG W –4 V 0V 20 15 10 5 Without Heatsink ith In S= fin ite 6 4 2 0 0.0 He at sin k 0.5 1.0 1.5 –0.5 –1.0 –1.5 0 0 50 100 150 VSD (V) VSD (V) Ta (°C) 145