SMA6080

SMA6080 PNP + NPN Darlington 3-phase motor drive External dimensions B Absolute maximum ratings ••• SMA (Ta=25°C) Ratings Symbol NPN PNP Unit VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 2 –2 A ICP 4 (PW≤1ms, Du≤50%) –4 (PW≤1ms, Du≤50%) A IB 0.5 –0.5 A 4 (Ta=25°C) W 20 (Tc=25°C) 150 °C –40 to +150 °C θ j–c 6.25 °C/W es ig Tj Tstg ■Equivalent circuit diagram 1 2 8 4 9 3 7 6 11 10 R4 5 rN R3 D R2 ew R1 ns PT 12 R1: 4kΩ typ R2: 100Ω typ R3: 4kΩ typ R4: 150Ω typ fo Characteristic curves IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) PNP 4 NPN (VCE=4V) 4 –5.0mA 0.0 1 2 4 3 5 IB= –0.6mA –0.5mA 2 –0.4mA Ta = 0 0 –1 –2 –4 –3 –5 0 0 –6 25 12 5°C 75 °C ° –3 C 0°C 1 –0.3mA 6 ec o VCE (V) –0.8mA –2 –1 m 1 IC (A) IC (A) 0.3mA 0 0 3 –1.2mA –1.0mA en 1 m IC (A) –3 .2mA A 0.6m 0.4mA 2 –2.0mA –1 A 0.0m IB=1 A 4.0m A 2.0m 3 de mA –4 d NPN 1 2 3 VBE (V) VCE (V) hFE-IC Characteristics (Typical) NPN PNP typ ot –3 hFE 1000 N hFE 1000 (VCE=–4V) 5000 typ 5000 PNP –4 IC (A) 10000 (VCE=–4V) 10000 R 20000 (VCE=4V) 500 500 –2 100 50 30 0.02 0.05 0.1 0.5 1 50 –0.02 4 –0.05 –0.1 –0.5 –1 –4 IC (A) IC (A) (VCE=4V) 20000 PNP (VCE=–4V) 10000 75°C 10000 5000 25°C 75°C 25°C 5000 ° 25 hFE hFE C 1000 500 °C 25 =1 Ta =1 Ta 1000 0° –3 C 500 0° C 100 –3 100 50 30 0.02 0.05 0.1 0.5 IC (A) 1 4 50 –0.02 –0.05 –0.1 –0.5 IC (A) –1 –2 VBE (V) hFE-IC Temperature Characteristics (Typical) NPN 0 0 Ta =1 25 75 °C °C 25 °C –3 0°C –1 100 –1 –4 –3 SMA6080 Electrical characteristics (Ta=25°C) NPN min typ Conditions 10 µA VCB=60V 5 mA VEB=6V V IC=10mA –60 VCE=4V, IC=1A 2000 max ICBO IEBO VCEO 60 hFE 2000 Specification Unit 5000 12000 VCE(sat) 1.1 1.5 V VBE(sat) 1.8 2.2 V VFEC 1.3 1.8 V min typ Unit Conditions –10 µA VCB=–60V –5 mA VEB=–6V V IC=–10mA max 5000 12000 –1.2 –1.5 V –1.9 –2.2 V IFEC=1A –1.3 –1.8 V IFEC=–1A µs VCC –30V, IC=1A, IB=2mA ton 0.5 µs VCC 30V, 0.4 tstg 4.5 µs IC=1A, 1.0 1.2 µs IB1=–IB2=2mA 0.4 50 MHz VCE=12V, IE=–0.1A 100 Cob 20 pF VCB=10V, f=1MHz 30 IC=–1A, IB=–2mA µs IC=–1A, µs IB1=–IB2=–2mA MHz VCE=–12V, IE=0.1A pF VCB=–10V, f=1MHz rN ew D tf fT VCE=–4V, IC=–1A ns Specification es ig Symbol PNP fo Characteristic curves VCE(sat)-IB Characteristics (Typical) (IC=1A) 3 PNP –3 NPN 20 de Ta=125°C θ j-a-PW Characteristics (IC=–1A) d NPN Ta=125°C 75°C m 1 0 0.1 –30°C –2 en –30°C 10 25°C θ j–a (°C / W) 2 VCE (sat) (V) 25°C 0.5 –1 1 0 –0.1 5 –0.5 –1 0.5 0.2 –5 0.5 1 5 IB (mA) ec o IB (mA) 5 1 m VCE (sat) (V) 75°C 10 50 100 500 1000 50 100 500 1000 PW (mS) VCE(sat)-IC Temperature Characteristics (Typical) 20 –30°C °C 75°C 25°C VCE (sat) (V) ot Ta=125 PNP (IC/IB=1000) –3 10 N VCE (sat) (V) 2 PNP (IC/IB=1000) R 3 –2 °C Ta=–30 –1 1 θ j–a (°C / W) NPN 25°C 75°C 5 125°C 0 0.2 0.5 1 0 –0.2 4 1 –0.5 IC (A) –1 –4 0.5 0.2 PT-Ta Characteristics 20 –5 1m s 0µ 10 s 5 10 PNP 5 m 1 PW (mS) Safe Operating Area (SOA) NPN 10 0.5 IC (A) s 10 0µ s 15 s W –1 1m s m 10 1 10 ea tsin PT (W) eH IC (A) init –0.5 Inf IC (A) ith 0.5 k 5 Without Heatsink –0.1 0.1 Single Pulse Single Pulse –0.05 Without Heatsink 0.05 Without Heatsink 0.03 Ta=25°C 3 5 10 50 VCE (V) 100 200 –0.03 Ta=25°C –3 –5 –10 –50 VCE (V) –100 0 –40 0 50 Ta (°C) 100 150 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 ns C1.5 ± 0.5 1 E 8 +0.2 ‒0.1 ew 10.2 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 de en m R ot 1.45 ± 0.15 * 4.0 • SIP 15 with Fin (SLA15Pin) φ 3.2 ± 31.3 ± 0.2 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 16.4 ± 0.2 N 11 × P2.54 ± 0.7= 27.94 ± 1.0 1.7 ± 0.1 13.0 ± 0.2 9.9 ± 0.2 2.45 ± R-End +0.2 0.55 4.8 ± 0.2 ± 0.2 1.7 ± 0.1 ± 0.2 12 0.85 ‒0.1 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 24.4 ± 0.2 0.65 ‒0.1 +0.2 ± 0.15 +0.2 0.55 ‒0.1 +0.2 ‒0.1 b Pin1 2.5 ± 0.2 +1.0 R-End ec o 13.0 a 4.8 m 24.4 ± 0.2 ± 0.2 2.7 Ellipse 3.2 ± 0.15×3.8 4.0 ± 0.2 D 1.2 ± 0.1 a: Part Number b: Lot No. 31.0 8 9 10 B C E d 0.55 27.94 ± 0.2 7 C b 0.65 +0.2 0.85 ‒0.1 31.5max 6 B a fo 1.46 ± 0.15 • SIP 12 with Fin (SLA12Pin) 5 C rN 2.4 a (10.4) 10.2 ± 0.2 2.5 ± 0.2 2.54 16.0± 0.2 4 B 31.0 ± 0.2 4.0 ± 0.2 b 9.5min 3 C • SIP 15 (SMA15Pin) 31.0 ± 0.2 1.2 2 B 9.7 ‒0.5 7 (3.0) 6.7 ± 0.5 6 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 5 9.7 ‒0.5 4 16.0 Pin No. 3 es ig 4.0 ± 0.2 2 (3.0) 6.7 ± 0.5 1.2 ± 0.2 0.5 ± 0.15 7 ×P2.54 = 17.78 • SIP 12 (SMA12Pin) φ 3.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 ± 0.15 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)