STA301A

STA301A Absolute maximum ratings NPN Darlington With built-in avalanche diode Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO VEBO 6 V VCEO 50 IC 4 A hFE 1000 ICP 8 (PW≤10ms, Du≤50%) A VCE(sat) W 15 (Tc=25°C) Tj 150 °C Tstg –40 to +150 °C 60 Unit Conditions 100 µA VCB=50V 10 mA VEB=6V 70 V V IC=3A, IB=10mA ton 1.0 2.0 µs VCC 30V, tstg 4.0 µs IC=3A, tf 1.5 µs IB1=–IB2=10mA 7 4 R2 ew 8 rN R1: 3kΩ typ R2: 150Ω typ fo Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 5 mA 10000 1.0mA hFE 0.4mA °C 1000 25 Ta ° 25 C 1000 m 0.3mA 0° –3 C 2 3 100 50 0.05 ec o 4 VCE(sat)-IC Temperature Characteristics (Typical) 1 0.5 4 0.05 VCE(sat)-IB Characteristics (Typical) 2 1 IC=2A 1 0 0.2 4 2 Ta=1 25°C IC=4A IC=3A 1 IC=1A 0.5 1 IC (A) 5 10 0 0 50 100 1 θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA) 10 16 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm 14 5 1m s 10 IC (A) eH 4 50×50×2 k 6 tsin 8 ea PT (W) 10 init 5 Inf θ j–a (°C / W) ith ms W 12 10 Without Heatsink Single Pulse 0.1 Without Heatsink 2 10 50 100 PW (mS) 152 500 1000 0 –40 1 0.5 25×50×2 1.0 5 2 VBE (V) IB (mA) 30 0.5 1 4 (VCE=4V) 4 IC (A) VCE (sat) (V) 125°C 0.5 1 IC-VBE Temperature Characteristics (Typical) 3 R ot 25°C 0 0.1 0.5 IC (A) 3 Ta=–30°C N 1 0.1 IC (A) (IC / IB=1000) 2 100 0.1 25°C 1 500 –30°C 0 VCE (V) VCE (sat) (V) =1 500 1 0 5000 en 0.5mA m IC (A) 0.6mA 2 typ 5000 0.8mA 3 10000 hFE 4 (VCE=4V) 20000 d 2.0 de IB= hFE-IC Temperature Characteristics (Typical) (VCE=4V) 20000 75°C R1 6 D 1 ns 5 es ig 3 IC=10mA VCE=4V, IC=3A ■Equivalent circuit diagram 2 STA (8-pin) (Ta=25°C) Specification min typ max Symbol PT ••• Electrical characteristics (Ta=25°C) 3 (Ta=25°C) External dimensions C Ta=25°C 0 50 Ta (°C) 100 150 0.05 3 5 10 50 VCE (V) 100 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 ns C1.5 ± 0.5 1 E 8 +0.2 ‒0.1 ew 10.2 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 de en m R ot 1.45 ± 0.15 * 4.0 • SIP 15 with Fin (SLA15Pin) φ 3.2 ± 31.3 ± 0.2 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 16.4 ± 0.2 N 11 × P2.54 ± 0.7= 27.94 ± 1.0 1.7 ± 0.1 13.0 ± 0.2 9.9 ± 0.2 2.45 ± R-End +0.2 0.55 4.8 ± 0.2 ± 0.2 1.7 ± 0.1 ± 0.2 12 0.85 ‒0.1 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 24.4 ± 0.2 0.65 ‒0.1 +0.2 ± 0.15 +0.2 0.55 ‒0.1 +0.2 ‒0.1 b Pin1 2.5 ± 0.2 +1.0 R-End ec o 13.0 a 4.8 m 24.4 ± 0.2 ± 0.2 2.7 Ellipse 3.2 ± 0.15×3.8 4.0 ± 0.2 D 1.2 ± 0.1 a: Part Number b: Lot No. 31.0 8 9 10 B C E d 0.55 27.94 ± 0.2 7 C b 0.65 +0.2 0.85 ‒0.1 31.5max 6 B a fo 1.46 ± 0.15 • SIP 12 with Fin (SLA12Pin) 5 C rN 2.4 a (10.4) 10.2 ± 0.2 2.5 ± 0.2 2.54 16.0± 0.2 4 B 31.0 ± 0.2 4.0 ± 0.2 b 9.5min 3 C • SIP 15 (SMA15Pin) 31.0 ± 0.2 1.2 2 B 9.7 ‒0.5 7 (3.0) 6.7 ± 0.5 6 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 5 9.7 ‒0.5 4 16.0 Pin No. 3 es ig 4.0 ± 0.2 2 (3.0) 6.7 ± 0.5 1.2 ± 0.2 0.5 ± 0.15 7 ×P2.54 = 17.78 • SIP 12 (SMA12Pin) φ 3.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 ± 0.15 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)