STA401A

STA401A NPN Darlington With built-in avalanche diode Absolute maximum ratings Electrical characteristics (Ta=25°C) Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO VEBO 6 V VCEO 50 IC 4 A hFE 1000 ICP 8 (PW≤10ms, Du≤50%) A VCE(sat) 4 (Ta=25°C) W 20 (Tc=25°C) Tj 150 °C Tstg –40 to +150 °C (Ta=25°C) Specification min typ max Symbol PT External dimensions D • • • STA (10-pin) Unit Conditions 100 µA VCB=50V 10 mA VEB=6V 70 V 60 V IC=3A, IB=10mA ton 1.0 2.0 µs VCC 30V, tstg 4.0 µs IC=3A, tf 1.5 µs IB1=–IB2=10mA 5 8 R2 D 10 rN R1: 3kΩ typ R2: 150Ω typ fo Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 5 mA 10000 1.0mA hFE 0.4mA 1000 Ta °C 25 1000 m 0.3mA °C 25 –3 C 0° 50 0.05 ec o 4 VCE(sat)-IC Temperature Characteristics (Typical) 1 0.5 0.05 4 0.5 IC-VBE Temperature Characteristics (Typical) 3 VCE (sat) (V) 125°C (VCE=–4V) 4 2 IC=1A 1 IC=4 A IC=3A IC=2A 2 Ta= 125 1 0.5 4 VCE(sat)-IB Characteristics (Typical) R Ta=–30°C 25°C 0 0.1 1 IC (A) 3 ot N 1 0.1 IC (A) (IC / IB=1000) 2 100 0.1 1 0 0.2 4 0 0.5 1 IC (A) 5 10 50 0 100 1 θ j-a-PW Characteristics PT-Ta Characteristics 20 With Silicone Grease Natural Cooling Heatsink: Aluminum in mm With Infinite Heatsink 5 s 10 Safe Operating Area (SOA) 10 1m 24 2 VBE (V) IB (mA) 20 –30°C 3 25°C 2 100 °C 1 500 75°C 0 VCE (V) VCE (sat) (V) =1 500 1 0 5000 en 0.5mA m IC (A) 0.6mA 2 typ 5000 0.8mA 3 10000 hFE 4 (VCE=4V) 20000 de 2.0 d 20000 IB= hFE-IC Temperature Characteristics (Typical) (VCE=4V) IC (A) R1 9 6 ew 1 7 4 es ig 3 ns ■Equivalent circuit diagram 2 IC=10mA VCE=4V, IC=3A 10 100×100×2 12 8.0 1.0 IC (A) PT (W) θ j–a (°C / W) ms 16 5 4.0 1 0.5 50×50×2 25×50×2 Without Heatsink Single Pulse 0.1 Without Heatsink Ta=25°C 0.5 1 5 10 50 100 PW (mS) 500 1000 0 –40 0 50 Ta (°C) 100 150 0.05 3 5 10 50 100 VCE (V) 161 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 9.0±0.2 11.3±0.2 b a ns 0.5±0.15 C1.5±0.5 1 E 5 6 7 2 3 4 5 6 7 B C B C B C 8 Pin No. • SIP 15 (SMA15Pin) 4.0±0.2 D • SIP 12 (SMA12Pin) 8 9 10 B C E 31.0±0.2 4.0±0.2 b 10.2±0.2 2.5±0.2 a rN fo 1.46±0.15 +0.2 –0.1 0.65 +0.2 +0.2 –0.1 ±0.1 0.55 1.2 de a: Part Number b: Lot No. m en • SIP 12 with Fin (SLA12Pin) 31.5max • SIP 15 with Fin (SLA15Pin) 31.3±0.2 φ 3.2±0.15 φ 3.2±0.15 × 3.8 31.0±0.2 24.4±0.2 16.4 ±0.2 R ot Pin1 1.2 ±0.15 1.7±0.1 2.45±0.2 1.45 R-End 12 +0.2 +0.2 0.65–0.1 0.85–0.1 ±0.15 4.8±0.2 1.7±0.1 ±0.2 9.9±0.2 13.0±0.2 13.0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ec o ±0.2 * 4.0 1.15 * b 2.7 9.5min 16.0±0.2 24.4±0.2 a 4.8 m φ 3.2 31.0 ±0.15 Ellipse 3.2±0.15 × 3.8 ±0.2 * ±0.7 14 × P2.03±0.7= 28.42±1.0 16.0 27.94 +0.2 0.55–0.1 +0.2 –0.1 d 0.85–0.1 2.54 R-End ±0.2 (10.4) 2.4 10.2±0.2 b a 2.5±0.2 ew 31.0±0.2 +1.0 4 9.7–0.5 3 (3.0) 6.7±0.5 2 +0.2 –0.1 0.55 2.2 +0.2 * 14 × P2.03 ±0.7 ±0.7 * =28.42 1.15–0.1 ±1.0 +1.0 1 es ig 4.0±0.2 C1.5±0.5 9.7–0.5 0.5±0.15 a: Part Number b: Lot No. 9 × 2.54 = 22.86±0.25 7 × P2.54 = 17.78 1.2±0.2 (2.54) 0.5±0.15 (2.54) (3.0) 6.7±0.5 0.5±0.15 4.0±0.2 1.0±0.25 1.0±0.25 1.2±0.2 4.7±0.5 4.7±0.5 2.3±0.2 25.25±0.2 9.0±0.2 11.3±0.2 2.5 max 20.4 max +0.2 0.55–0.1 * 4.0±0.7 a: Part Number b: Lot No. N 11 × P2.54±0.7 = 27.94±1.0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 15 with Fin (SLA15Pin) 31.0±0.2 24.4±0.2 16.4±0.2 φ 3.2±0.15 × 3.8 4.8±0.2 1.7±0.1 b 17.9±0.6 (5) a 12.9±0.2 9.9±0.2 φ 3.2±0.15 16±0.2 Gate burr 2.45±0.2 4–(R1) +0.2 0.65–0.1 +0.2 3±0.5 20 × P1.43±0.5=28.6±1.0 0.55–0.1 4 31.3±0.2 ±0.7 a: Part Number b: Lot No. 1 3 2 190 Transistors 5 4 7 6 9 11 13 15 17 19 21 8 10 12 14 16 18 20 (Unit:mm)