STA481A

STA481A NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions D ••• STA (10-pin) Electrical characteristics (Ta=25°C) (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO VEBO 6 V VCEO 50 IC 1 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤25%) A VCE(sat) 1.0 1.5 V IB 0.5 A VBE(sat) 1.6 2.2 V VFEC 1.4 1.8 V IFEC=0.5A ton 0.5 µs VCC 30V, 4 (Ta=25°C) PT W 16 (Tc=25°C) Unit Conditions 10 µA VCB=50V 3 mA VEB=6V 60 70 V 5000 10000 IC=1mA VCE=4V, IC=0.5A IC=0.5A, IB=1mA 150 °C tstg 2.5 µs IC=0.5A, –40 to +150 °C tf 1.0 µs IB1=–IB2=1mA fT 50 MHz VCE=12V, IE=–0.1A Cob 14 pF VCB=10V, f=1MHz 5 8 R2 10 ew R1: 6kΩ typ R2: 400Ω typ fo Characteristic curves hFE-IC Characteristics (Typical) A 2m A 1m mA 0.5 1000 hFE 0.3m A m 1 1 2 3 4 5 30 0.01 6 ec o VCE (V) VCE(sat)-IC Temperature Characteristics (Typical) 0.1 1 2.5 30 0.01 VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC=0.5A) 3 25°C 2 1.5 IC (A) VCE (sat) (V) –30°C –30°C 25°C 0.5 125°C 0 0.01 1 1 75°C 125°C 75°C 0.1 1 (VCE=4V) 2.5 R ot 1 2.5 1 IC (A) 2 N VCE (sat) (V) 2 0.1 IC (A) (IB=2mA) 3 C 0° –3 100 100 m 0.5 0 0 C 5° 12 °C 75 °C 25 1000 en IC (A) 1.5 (VCE=4V) 10000 hFE 2 hFE-IC Temperature Characteristics (Typical) typ de mA 10 IB = 50m A 10000 A 5m (VCE=4V) d IC-VCE Characteristics (Typical) 2.5 0 0.05 0.1 5 1 IC (A) 10 0 0 100 125 °C 75° C 25°C –30°C R1 9 6 rN 1 θ j-a-PW Characteristics PT-Ta Characteristics 30 20 2 3 VBE (V) IB (mA) Safe Operating Area (SOA) 5 10 With Silicone Grease Natural Cooling Heatsink: Aluminum S 0µ S 1 fin ite 10 mS In He PT (W) 10 ith 5 W at k sin θ j–a (°C / W) 1m 15 10 IC (A) 1 7 4 D 3 2 es ig ■Equivalent circuit diagram ns Tj Tstg 0.1 100 0.01 1 5 Without Heatsink 1 1 10 100 PW (mS) 1000 0 –40 Single Pulse Without Heatsink Ta=25°C 0 50 Ta (°C) 150 10 100 VCE (V) 185