STA485A

STA485A NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions D ••• STA (10-pin) Electrical characteristics (Ta=25°C) (Ta=25°C) Specification min typ max Symbol Ratings Unit ymbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO 6 V VCEO 85 IC 1 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤25%) A VCE(sat) 1.0 1.5 V IB 0.5 A VBE(sat) 1.6 2.2 V VFEC 1.4 1.8 V IFEC=0.5A ton 0.5 µs VCC 30V, 4 (Ta=25°C) PT W 16 (Tc=25°C) Unit Conditions 10 µA VCB=85V 3 mA VEB=6V 100 115 V 5000 10000 IC=1mA VCE=4V, IC=0.5A IC=0.5A, IB=1mA 150 °C tstg 2.5 µs IC=0.5A, –40 to +150 °C tf 1.0 µs IB1=–IB2=1mA fT 50 MHz VCE=12V, IE=–0.1A Cob 14 pF VCE=10V, f=1MHz 5 8 R2 10 ew R1 9 6 rN 1 7 4 D 3 2 R1: 5kΩ typ R2: 400Ω typ fo Characteristic curves 10000 5000 A 0.3m hFE en 500 100 A 0.2m 1 1 2 4 3 5 VCE(sat)-IC Temperature Characteristics (Typical) 0.1 30 0.01 2.5 0.1 1 2.5 IC (A) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC=0.5A) 3 (VCE=4V) 2.5 R 125°C 2 1 –30°C 2 1.5 IC (A) VCE (sat) (V) ot 25°C –30°C 25°C 1 75°C N VCE (sat) (V) 2 °C 25 C 0° 3 – IC (A) (IB=2mA) 3 C 5° 12 °C 75 100 20 0.01 6 ec o VCE (V) 1000 50 m 0.5 0 0 10000 1000 m 1.5 (VCE=4V) 20000 typ de IB= A 0.5m hFE-IC Temperature Characteristics (Typical) (VCE=4V) hFE 5m A A 2m A 1m 2 IC (A) hFE-IC Characteristics (Typical) d IC-VCE Characteristics (Typical) 2.5 es ig ■Equivalent circuit diagram ns Tj Tstg 1 1 0.5 12 5°C 75° C 25° C –30 °C 125°C 75°C 0 0.01 0.1 1 IC (A) 0 0.05 0.1 5 1 10 0 0 100 1 θ j-a-PW Characteristics PT-Ta Characteristics 30 2 3 VBE (V) IB (mA) Safe Operating Area (SOA) 5 20 S 0µ 10 With Silicone Grease Natural Cooling Heatsink: Aluminum 10 15 m 1 IC (A) te i fin at He k sin PT (W) In 10 S 1m ith θ j–a (°C / W) S W 10 0.1 5 5 Without Heatsink Single Pulse Without Heatsink Ta=25°C 2 1 5 10 50 100 PW (mS) 186 500 1000 0 –40 0 50 Ta (°C) 100 150 0.01 1 10 VCE (V) 100 200