250 V / 500 V High Voltage 3-phase Motor Drivers
SX68000MH Series
Data Sheet
Description
Package
The SX68000MH series are high voltage 3-phase
motor drivers in which transistors, a pre-drive circuit,
and bootstrap circuits (diodes and resistors) are highly
integrated.
These products can optimally control the inverter
systems of low- to medium-capacity motors that require
universal input standards.
SOP36
36
1
Features
● Built-in Bootstrap Diodes with Current Limiting
Resistors (60 Ω)
● CMOS-compatible Input (3.3 V or 5 V)
● Pb-free (RoHS Compliant)
● Fault Signal Output at Protection Activation (FO Pin)
● High-side Shutdown Signal Input (SD Pin)
● Protections Include:
Overcurrent Limit (OCL): Auto-restart
Overcurrent Protection (OCP): Auto-restart
Undervoltage Lockout for Power Supply
High-side (UVLO_VB): Auto-restart
Low-side (UVLO_VCC): Auto-restart
Thermal Shutdown (TSD): Auto-restart
VB32
VCC1 4
Not to scale
Selection Guide
VDSS
IO
Part Number
250 V
2.0 A
SX68001MH
500 V
2.5 A
SX68003MH
Applications
● Fan Motor for Air Conditioner
● Fan Motor for Air Purifier and Electric Fan
Typical Application
VCC
19
18
36
32
VB31
CBOOT3
1 VB2
CBOOT2
24 VB1
COM1
HIN3
HIN2
HIN1
SD
HIN3
HIN2
HIN1
OCL
10
LIN3
11
LIN2
12
LIN1
13
REG 14
COM2 15
VCC2 16
FO 17
LIN3
LIN2
LIN1
REG
Controller
CBOOT1
5
6
7
8
9
5V
RFO
VDC
VBB1
27
34
VBB2
23 U
2 V
MIC
29 V1
21 V2
M
W1
31
19 W2
CS
CDC
Fault
CFO
RO
LS
A/D
18
RS
CO
GND
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
1
SX68000MH Series
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings ----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1 Characteristics of Control Parts------------------------------------------------------------------ 6
3.2 Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3 Thermal Resistance Characteristics ------------------------------------------------------------- 7
3.4 Transistor Characteristics ------------------------------------------------------------------------- 8
3.4.1
SX68001MH ------------------------------------------------------------------------------------ 8
3.4.2
SX68003MH ------------------------------------------------------------------------------------ 9
4. Mechanical Characteristics ----------------------------------------------------------------------------- 9
5. Truth Table ----------------------------------------------------------------------------------------------- 10
6. Block Diagram ------------------------------------------------------------------------------------------- 11
7. Pin Configuration Definitions ------------------------------------------------------------------------- 12
8. Typical Application ------------------------------------------------------------------------------------- 13
9. Physical Dimensions ------------------------------------------------------------------------------------ 14
10. Marking Diagram --------------------------------------------------------------------------------------- 15
11. Functional Descriptions -------------------------------------------------------------------------------- 16
11.1 Turning On and Off the IC ---------------------------------------------------------------------- 16
11.2 Pin Descriptions ----------------------------------------------------------------------------------- 16
11.2.1 U, V, V1, V2, W1, and W2 ----------------------------------------------------------------- 16
11.2.2 VB1, VB2, VB31, and VB32 --------------------------------------------------------------- 16
11.2.3 VCC1 and VCC2 ---------------------------------------------------------------------------- 17
11.2.4 COM1 and COM2--------------------------------------------------------------------------- 17
11.2.5 REG -------------------------------------------------------------------------------------------- 18
11.2.6 HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------- 18
11.2.7 VBB1 and VBB2 ----------------------------------------------------------------------------- 18
11.2.8 LS ----------------------------------------------------------------------------------------------- 19
11.2.9 OCL -------------------------------------------------------------------------------------------- 19
11.2.10 SD----------------------------------------------------------------------------------------------- 19
11.2.11 FO ---------------------------------------------------------------------------------------------- 19
11.3 Protections ------------------------------------------------------------------------------------------ 19
11.3.1 Fault Signal Output ------------------------------------------------------------------------- 20
11.3.2 Shutdown Signal Input --------------------------------------------------------------------- 20
11.3.3 Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 20
11.3.4 Overcurrent Limit (OCL) ----------------------------------------------------------------- 21
11.3.5 Overcurrent Protection (OCP) ----------------------------------------------------------- 22
11.3.6 Thermal Shutdown (TSD) ----------------------------------------------------------------- 22
12. Design Notes ---------------------------------------------------------------------------------------------- 23
12.1 PCB Pattern Layout ------------------------------------------------------------------------------ 23
12.2 Considerations in IC Characteristics Measurement --------------------------------------- 23
13. Calculating Power Losses and Estimating Junction Temperature ---------------------------- 24
13.1 Power MOSFET ----------------------------------------------------------------------------------- 24
13.1.1 Power MOSFET Steady-state Loss, PRON----------------------------------------------- 24
13.1.2 Power MOSFET Switching Loss, PSW --------------------------------------------------- 25
13.1.3 Body Diode Steady-state Loss, PSD ------------------------------------------------------- 25
13.1.4 Estimating Junction Temperature of Power MOSFET ------------------------------ 25
14. Performance Curves ------------------------------------------------------------------------------------ 26
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
2
SX68000MH Series
14.1 Transient Thermal Resistance Curves -------------------------------------------------------- 26
14.2 Performance Curves of Control Parts--------------------------------------------------------- 27
14.3 Performance Curves of Output Parts --------------------------------------------------------- 33
14.3.1 Output Transistor Performance Curves ------------------------------------------------ 33
14.3.2 Switching Loss Curves --------------------------------------------------------------------- 34
14.4 Allowable Effective Current Curves ----------------------------------------------------------- 35
14.4.1 SX68001MH ---------------------------------------------------------------------------------- 35
14.4.2 SX68003MH ---------------------------------------------------------------------------------- 36
15. Pattern Layout Example ------------------------------------------------------------------------------- 37
16. Typical Motor Driver Application ------------------------------------------------------------------- 39
Important Notes ---------------------------------------------------------------------------------------------- 40
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
3
SX68000MH Series
1.
Absolute Maximum Ratings
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, COM1 = COM2 = COM.
Parameter
Symbol
Conditions
Rating
Unit
Remarks
Power MOSFET
Breakdown Voltage
VDSS
VCC
Logic Supply Voltage
VBS
500
VCC1–COM1,
VCC2–COM2
VB1–U;
VB2–V, VB2–V1;
VB31–W1, VB32–W1
Output Current (DC) (1)
IO
TC = 25 °C, TJ < 150 ℃
Output Current (Pulse)
IOP
TC = 25 °C, TJ < 150 ℃,
PW ≤ 100 μs
Regulator Output Current
IREG
Input Voltage
Allowable Power
Dissipation
Operating Case
Temperature(2)
Junction Temperature(3)
VIN
HINx, LINx, FO, SD
PD
TC = 25 °C
Storage Temperature
250
VCC = 15 V, ID = 100 µA,
VIN = 0 V
V
SX68001MH
SX68003MH
20
V
20
2
2.5
3
3.75
A
A
35
mA
− 0.5 to 7
V
3
W
TC(OP)
−20 to 100
°C
TJ
150
°C
TSTG
−40 to 150
°C
SX68001MH
SX68003MH
SX68001MH
SX68003MH
(1)
Should be derated depending on an actual case temperature. See Section 14.4.
Refers to a case temperature measured during IC operation.
(3)
Refers to the junction temperature of each chip built in the IC, including the control IC, transistors, and fast recovery
diodes.
(2)
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
4
SX68000MH Series
2.
Recommended Operating Conditions
Unless specifically noted, COM1 = COM2 = COM.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
VBBx–LS
—
140
200
VBBx–LS
VCC1–COM1,
VCC2–COM2
VB1–U;
VB2–V, VB2–V1;
VB31–W1, VB32–W1
—
300
400
13.5
—
16.5
V
13.5
—
16.5
V
VIN
0
—
5.5
V
tIN(MIN)ON
0.5
—
—
μs
tIN(MIN)OFF
0.5
—
—
μs
Dead Time of Input Signal
tDEAD
1.5
—
—
μs
FO Pin Pull-up Resistor
RFO
3.3
—
10
kΩ
FO Pin Pull-up Voltage
FO Pin Noise Filter
Capacitor
Bootstrap Capacitor
VFO
3.0
—
5.5
V
CFO
0.001
—
0.01
μF
CBOOT
1
—
—
μF
IP ≤ 3 A
0.37
—
—
IP ≤ 3.75 A
0.3
—
—
Main Supply Voltage
VDC
VCC
Logic Supply Voltage
VBS
Input Voltage
(HINx, LINx, SD, FO)
Minimum Input Pulse
Width
Unit
V
Ω
Shunt Resistor
RS
RC Filter Resistor
RO
—
—
100
Ω
RC Filter Capacitor
CO
1000
—
10000
pF
PWM Carrier Frequency
Operating Case
Temperature
fC
—
—
20
kHz
TC(OP)
—
—
100
°C
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
Remarks
SX68001MH
SX68003MH
SX68001MH
SX68003MH
5
SX68000MH Series
3.
Electrical Characteristics
Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, VCC = 15 V, COM1 = COM2 = COM.
3.1
Characteristics of Control Parts
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
10.5
11.5
12.5
V
9.5
10.5
11.5
V
10.0
11.0
12.0
V
9.0
10.0
11.0
V
—
4.6
8.5
mA
—
140
400
μA
Remarks
Power Supply Operation
VCC(ON)
Logic Operation Start
Voltage
VBS(ON)
VCC(OFF)
Logic Operation Stop
Voltage
VBS(OFF)
ICC
Logic Supply Current
Input Signal
High Level Input
Threshold Voltage
(HINx, LINx, SD)
Low Level Input
Threshold Voltage
(HINx, LINx, SD)
FO Pin High Level Input
Threshold Voltage
FO Pin Low Level Input
Threshold Voltage
High Level Input Current
(HINx, LINx)
Low Level Input Current
(HINx, LINx)
Fault Signal Output
FO Pin Voltage at Fault
Signal Output
FO Pin Voltage in Normal
Operation
Protection
OCL Pin Output Voltage
(L)
OCL Pin Output Voltage
(H)
Current Limit Reference
Voltage
OCP Threshold Voltage
OCP Hold Time
IBS
VCC1–COM1,
VCC2–COM2
VB1–U;
VB2–V, VB2–V1;
VB31–W1, VB32–W1
VCC1–COM1,
VCC2–COM2
VB1–U;
VB2–V, VB2–V1;
VB31–W1, VB32–W1
IREG = 0 A
HINx = 5 V; VBx pin
current in 1-phase
operation
VIH
Output ON
—
2.0
2.5
V
VIL
Output OFF
1.0
1.5
—
V
VIH(FO)
Output ON
—
2.0
2.5
V
VIL(FO)
Output OFF
1.0
1.5
—
V
IIH
VIN = 5 V
—
230
500
μA
IIL
VIN = 0 V
—
—
2
μA
VFOL
VFO = 5 V, RFO = 10 kΩ
0
—
0.5
V
VFOH
VFO = 5 V, RFO = 10 kΩ
4.8
—
—
V
VOCL(L)
0
—
0.5
V
VOCL(H)
4.5
—
5.5
V
VLIM
0.6175
0.6500
0.6825
V
VTRIP
0.9
1.0
1.1
V
tP
20
25
—
μs
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
6
SX68000MH Series
Parameter
Symbol
OCP Blanking Time
Current Limit Blanking
Time
TSD Operating
Temperature
TSD Releasing
Temperature
Regulator Output Voltage
3.2
Unit
tBK(OCP)
—
2
3.5
μs
tBK(OCL)
—
2
3.5
μs
135
150
165
°C
105
120
135
°C
6.75
7.5
8.25
V
Min.
—
—
Typ.
—
—
Max.
10
10
Unit
—
1.0
1.3
V
48
60
72
Ω
Min.
Typ.
Max.
Unit
—
—
10
°C/W
—
—
35
°C/W
IREG = 0 mA; without
heatsink
IREG = 0 mA; without
heatsink
IREG = 0 mA to 35 mA
Remarks
Bootstrap Diode Characteristics
Symbol
ILBD
VFB
Conditions
VR = 250 V
VR = 500 V
IFB = 0.15 A
RBOOT
μA
Remarks
SX68001MH
SX68003MH
Thermal Resistance Characteristics
Parameter
Junction-to-Case Thermal
Resistance(1)
Junction-to-Ambient
Thermal Resistance
(2)
Max.
VREG
Bootstrap Diode Leakage
Current
Bootstrap Diode Forward
Voltage
Bootstrap Diode Series
Resistor
(1)
Typ.
TDL
Parameter
3.3
Min.
TDH
Conditions
Symbol
RJ-C
RJ-A
Conditions
All power MOSFETs
operating(2)
All power MOSFETs
operating(2)
Remarks
Refers to a case temperature at the measurement point described in Figure 3-1.
Mounted on a CEM-3 glass (1.6 mm in thickness, 35 μm in copper foil thickness), and measured under natural air
cooling without silicone potting.
7.66 mm
Measurement point
36
19
1
18
4 mm
Figure 3-1.
Case Temperature Measurement Point
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
7
SX68000MH Series
3.4
Transistor Characteristics
Figure 3-2 provides the definitions of switching characteristics described in this and the following sections.
HINx/
LINx
0
trr
ton
td(on) tr
ID
toff
td(off) tf
90%
10%
0
VDS
0
Figure 3-2.
3.4.1
Switching Characteristics Definitions
SX68001MH
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VDS = 250 V, VIN = 0 V
—
—
100
µA
Drain-to-Source Leakage Current
IDSS
Drain-to-Source On-resistance
Source-to-Drain Diode Forward
Voltage
High-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time
RDS(ON)
ID = 1.0 A, VIN = 5 V
—
1.25
1.5
Ω
VSD
ISD =1.0 A, VIN = 0 V
—
1.1
1.5
V
—
75
—
ns
—
800
—
ns
—
45
—
ns
—
720
—
ns
—
40
—
ns
—
70
—
ns
—
750
—
ns
—
50
—
ns
—
660
—
ns
—
20
—
ns
Rise Time
Turn-off Delay Time
trr
td(on)
tr
td(off)
Fall Time
tf
Low-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time
trr
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDC = 150 V,
VCC = 15 V,
ID = 1.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
VDC = 150 V,
VCC = 15 V,
ID = 1.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
8
SX68000MH Series
3.4.2
SX68003MH
Parameter
Symbol
Drain-to-Source Leakage Current
Drain-to-Source On-resistance
Source-to-Drain Diode Forward
Voltage
High-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time
Max.
Unit
—
—
100
µA
RDS(ON)
ID = 1.25 A, VIN = 5 V
—
2.0
2.4
Ω
VSD
ISD =1.25 A, VIN = 0 V
—
1.0
1.5
V
—
135
—
ns
—
940
—
ns
—
100
—
ns
—
975
—
ns
—
45
—
ns
—
135
—
ns
—
900
—
ns
—
105
—
ns
—
905
—
ns
—
35
—
ns
trr
td(on)
tr
td(off)
tf
Low-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time
trr
td(on)
Rise Time
tr
td(off)
Fall Time
4.
Typ.
VDS = 500 V, VIN = 0 V
Fall Time
Turn-off Delay Time
Min.
IDSS
Rise Time
Turn-off Delay Time
Conditions
VDC = 300 V,
VCC = 15 V,
ID = 1.25 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
VDC = 300 V,
VCC = 15 V,
ID = 1.25 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load
tf
Mechanical Characteristics
Parameter
Package Weight
Conditions
Min.
Typ.
Max.
Unit
—
1.4
—
g
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
Remarks
9
SX68000MH Series
5.
Truth Table
Table 5-1 is a truth table that provides the logic level definitions of operation modes.
In the case where HINx and LINx signals in each phase are high at the same time, both the high- and low-side
transistors become on (simultaneous on-state). Therefore, HINx and LINx signals, the input signals for the HINx and
LINx pins, require dead time setting so that such a simultaneous on-state event can be avoided.
After the IC recovers from a UVLO_VCC condition, the low-side transistors resume switching in accordance with
the input logic levels of the LINx signals (level-triggered), whereas the high-side transistors resume switching at the
next rising edge of an HINx signal (edge-triggered).
After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge
of an HINx signal (edge-triggered).
Table 5-1. Truth Table for Operation Modes
Mode
Normal Operation
Shutdown Signal Input
FO = “L”
Undervoltage Lockout for Highside Power Supply (UVLO_VB)
Undervoltage Lockout for Lowside Power Supply (UVLO_VCC)
Overcurrent Protection (OCP)
Overcurrent Limit (OCL)
(OCL = SD)
Thermal Shutdown (TSD)
HINx
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
LINx
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
High-side Transistor
OFF
ON
OFF
ON
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
ON
OFF
ON
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
Low-side Transistor
OFF
OFF
ON
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
ON
ON
OFF
OFF
OFF
OFF
10
SX68000MH Series
6.
Block Diagram
36
VB32
32 VB31
1 VB2
24 VB1
VCC1 4
UVLO
UVLO
UVLO
UVLO
27 VBB1
34 VBB2
HIN3
HIN2
HIN1
SD
COM1
6
7
8
9
5
VCC2 16
REG 14
LIN3 11
LIN2 12
LIN1 13
Input
Logic
High-side
Level Shift Driver
UVLO
REG
Input Logic
(OCP Reset)
FO 17
W1
V
V1
U
V2
W2
Lowside
Driver
COM2 15
Thermal
Shutdown
31
2
29
23
21
19
OCP
OCP and OCL
18 LS
OCL 10
Figure 6-1.
SX68000MH Block Diagram
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
11
SX68000MH Series
7.
Pin Configuration Definitions
1
VB2
2
V
VB32
35
VBB2
3
36
34
4
VCC1
5
COM1
6
HIN3
7
HIN2
8
HIN1
9
SD
10
OCL
11
LIN3
26
12
LIN2
25
13
LIN1
VB1
24
14
REG
U
23
15
COM2
16
VCC2
17
FO
18
LS
33
VB31
32
W1
31
30
V1
29
28
VBB1
27
22
V2
21
20
W2
19
Pin
Number
Pin
Name
1
VB2
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V
—
VCC1
COM1
HIN3
HIN2
HIN1
SD
OCL
LIN3
LIN2
LIN1
REG
COM2
VCC2
FO
LS
W2
—
V2
—
U
24
VB1
25
26
—
—
27
VBB1
28
29
30
31
—
V1
—
W1
32
VB31
33
—
34
VBB2
35
—
36
VB32
Description
V-phase high-side floating supply voltage
input
V-phase bootstrap capacitor connection
Pin removed
High-side logic supply voltage input
High-side logic ground
Logic input for W-phase high-side gate driver
Logic input for V-phase high-side gate driver
Logic input for U-phase high-side gate driver
High-side shutdown signal input
Overcurrent limit signal input
Logic input for W-phase low-side gate driver
Logic input for V-phase low-side gate driver
Logic input for U-phase low-side gate driver
Regulator output
Low-side logic ground
Low-side logic supply voltage input
Fault signal output and shutdown signal input
Power MOSFET source
W-phase output (connected to W1 externally)
Pin removed
V-phase output (connected to V1 externally)
Pin removed
U-phase output
U-phase high-side floating supply voltage
input
Pin removed
Pin removed
Positive DC bus supply voltage (connected to
VBB2 externally)
Pin removed
V-phase output (connected to V2 externally)
Pin removed
W-phase output (connected to W2 externally)
W-phase high-side floating supply voltage
input
Pin removed
Positive DC bus supply voltage (connected to
VBB1 externally)
Pin removed
W-phase high-side floating supply voltage
input
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
12
SX68000MH Series
8.
Typical Application
CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge
voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum
ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions to
ensure that your application works flawlessly.
VB2 1
V 2
CBOOT2
36 VB32
VCC
VCC1 4
COM1
GND
HIN3
HIN2
HIN1
SD
OCL
LIN3
LIN2
LIN1
HIN3
HIN2
Controller
HIN1
LIN3
LIN2
LIN1
REG
REG
5V
COM2
VCC2
FO
RFO
34 VBB2
5
6
7
8
9
32
10
11
12
13
14
15
16
17
27
31
29
VB31
CBOOT3
W1
V1
VDC
VBB1
CBOOT1
MIC
24
23
21
19
VB1
U
M
V2
W2
CS
CDC
Fault
CFO
RO
A/D
LS
18
A/D
CO
RS
GND
Figure 8-1.
SX68000MH Typical Application
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
13
SX68000MH Series
9.
Physical Dimensions
● SOP36 Package
22 ±0.2
(Includes mold flash)
+0.15
1
18
P=1.2 ±0.2
A
2.1 ±0.2
1.05 ±0.2
14.1 ±0.3
19
11.4 ±0.2
36
(Excludes mold flash)
0.25 -0.05
+0.15
0.4 -0.05
0 to 8°
0 to 0.2
0.7 ±0.3
(R-end)
0.8 ±0.2
(From backside to root of pin)
Enlarged view of A (S = 20/1)
NOTES:
● Dimensions in millimeters
● Pb-free (RoHS compliant)
● Reflow (MSL3)
Preheat: 180 °C / 90 ± 30 s
Solder heating: 250 °C / 10 ± 1 s (260 °C peak, 2 times)
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
14
SX68000MH Series
Pin 19
0.8
1.6
0.4
10.2
5.4
7.8
4.2
5.4
0.6
1.8
4.2
5.4
4.2
1.6
Pin 18
Pin 1
6.15
17.2
6.15
7.8
10.2
2.45
Pin 36
● Land Pattern Example
10.2
9.0
7.8
6.6
3.0
1.8
0.6
0
0.6
1.8
3.0
4.2
5.4
6.6
9.0
10.2
2.45
0.4
Unit: mm
10. Marking Diagram
36
19
SX6800xMH
Part Number
YMDDX
1
18
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
X is the control number
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
15
SX68000MH Series
11. Functional Descriptions
11.2.2
Unless specifically noted, this section uses the
following definitions:
These pins are connected to bootstrap capacitors for
the high-side floating supply.
In actual applications, use either of the VB31 or VB32
pin because they are internally connected.
Voltages across the VBx and these output pins should
be maintained within the recommended range (i.e., the
Logic Supply Voltage, VBS) given in Section 2.
A bootstrap capacitor, CBOOTx, should be connected in
each of the traces between the VB1 and U pins, the VB2
and V pins, the VB31 (VB32) and W1 pins.
For proper startup, turn on the low-side transistor first,
then fully charge the bootstrap capacitor, CBOOTx.
For the capacitance of the bootstrap capacitors,
CBOOTx, choose the values that satisfy Equations (1) and
(2). Note that capacitance tolerance and DC bias
characteristics must be taken into account when you
choose appropriate values for CBOOTx.
● All the characteristic values given in this section are
typical values.
● For pin and peripheral component descriptions, this
section employs a notation system that denotes a pin
name with the arbitrary letter “x”, depending on
context. Thus, “the VCCx pin” is used when referring
to either or both of the VCC1 and VCC2 pins.
● The COM1 pin is always connected to the COM2 pin.
11.1 Turning On and Off the IC
The procedures listed below provide recommended
startup and shutdown sequences. To turn on the IC
properly, do not apply any voltage on the VBBx, HINx,
and LINx pins until the VCCx pin voltage has reached a
stable state (VCC(ON) ≥ 12.5 V).
It is required to fully charge bootstrap capacitors,
CBOOTx, at startup (see Section 11.2.2).
To turn off the IC, set the HINx and LINx pins to
logic low (or “L”), and then decrease the VCCx pin
voltage.
11.2 Pin Descriptions
11.2.1
U, V, V1, V2, W1, and W2
These pins are the outputs of the three phases, and
serve as the connection terminals to the 3-phase motor.
Do not connect the 3-phase motor to the V pin. The V1
and W1 pins must be connected to the V2 and W2 pins
on a PCB, respectively.
The U, V (V1), and W1 pins are the grounds for the
VB1, VB2, and VB31 (VB32) pins.
The U, V, and W1 pins are connected to the negative
nodes of bootstrap capacitors, CBOOTx. The V pin is
internally connected to the V1 pin.
Since high voltages are applied to these output pins
(U, V, V1, V2, W1, and W2), it is required to take
measures for insulating as follows:
● Keep enough distance between the output pins and
low-voltage traces.
● Coat the output pins with insulating resin.
VB1, VB2, VB31, and VB32
CBOOTx (μF) > 800 × t L(OFF)
(1)
1 μF ≤ CBOOTx ≤ 220 μF
(2)
In Equation (1), let tL(OFF) be the maximum off-time of
the low-side transistor (i.e., the non-charging time of
CBOOTx), measured in seconds.
Even while the high-side transistor is off, voltage
across the bootstrap capacitor keeps decreasing due to
power dissipation in the IC. When the VBx pin voltage
decreases to VBS(OFF) or less, the high-side undervoltage
lockout (UVLO_VB) starts operating (see Section
11.3.3.1). Therefore, actual board checking should be
done thoroughly to validate that voltage across the VBx
pin maintains over 11.0 V (VBS > VBS(OFF)) during a lowfrequency operation such as a startup period.
As Figure 11-1 shows, a bootstrap diode, DBOOTx, and
a current-limiting resistor, RBOOTx, are internally placed
in series between the VCC1 and VBx pins. Time
constant for the charging time of CBOOTx, τ, can be
computed by Equation (3):
τ = CBOOTx × R BOOTx ,
(3)
where CBOOTx is the optimized capacitance of the
bootstrap capacitor, and RBOOTx is the resistance of the
current-limiting resistor (60 Ω ± 20%).
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
16
SX68000MH Series
DBOOT1 RBOOT1
VB1
VB2
VB31
1
0
Set
32
0
VBB1
27
34
VBB2
4
16
VCC2
HINx
CBOOT2
DBOOT3 RBOOT3
VCC1
24
CBOOT1
DBOOT2 RBOOT2
HO3
HO2
HO1
VCC
U
MIC
V
Reset
VDC
0
23
VBx–HSx
2
29
V1
5
COM1
15
COM2
CBOOT3
St ays l ogic hi gh
Q
W2
31
W1
0
Bootstrap Circuit
Figure 11-3.
Figure 11-2 shows an internal level-shifting circuit. A
high-side output signal, HOx, is generated according to
an input signal on the HINx pin. When an input signal
on the HINx pin transits from low to high (rising edge),
a “Set” signal is generated. When the HINx input signal
transits from high to low (falling edge), a “Reset” signal
is generated. These two signals are then transmitted to
the high-side by the level-shifting circuit and are input to
the SR flip-flop circuit. Finally, the SR flip-flop circuit
feeds an output signal, Q (i.e., HOx).
Figure 11-3 is a timing diagram describing how noise
or other detrimental effects will improperly influence the
level-shifting process. When a noise-induced rapid
voltage drop between the VBx and output pins (U, V/V1,
or W1; hereafter “VBx–HSx”) occurs after the Set signal
generation, the next Reset signal cannot be sent to the
SR flip-flop circuit. And the state of an HOx signal stays
logic high (or “H”) because the SR flip-flop does not
respond. With the HOx state being held high (i.e., the
high-side transistor is in an on-state), the next LINx
signal turns on the low-side transistor and causes a
simultaneously-on condition, which may result in
critical damage to the IC. To protect the VBx pin against
such a noise effect, add a bootstrap capacitor, CBOOTx, in
each phase. CBOOTx must be placed near the IC and be
connected between the VBx and HSx pins with a
minimal length of traces. To use an electrolytic capacitor,
add a 0.01 μF to 0.1 μF bypass capacitor, CPx, in parallel
near these pins used for the same phase.
U1
VBx
S
Set
Input
logic
HINx
Q
HOx
R
Pulse
generator Reset
COM1
5
Figure 11-2.
VBS(OFF)
0
19
Figure 11-1.
VBS(ON)
M
Internal Level-shifting Circuit
HSx
11.2.3
Waveforms at VBx-HSx Voltage Drop
VCC1 and VCC2
These are the logic power supply pins for the built-in
control MIC. The VCC1 and VCC2 pins must be
externally connected on a PCB because they are not
internally connected. To prevent malfunction induced by
supply ripples or other factors, put a 0.01 μF to 0.1 μF
ceramic capacitor, CVCC, near these pins. To prevent
damage caused by surge voltages, put an 18 V to 20 V
Zener diode, DZ, between the VCCx and COMx pins.
Voltages to be applied between the VCCx and COMx
pins should be regulated within the recommended
operational range of VCC, given in Section 2.
4
VCC1
16
VCC2
VCC
MIC
CVCC
DZ
Figure 11-4.
11.2.4
5
COM1
15
COM2
VCCx Pin Peripheral Circuit
COM1 and COM2
These are the logic ground pins for the built-in control
MIC. The COM1 and COM2 pins should be connected
externally on a PCB because they are not internally
connected. Varying electric potential of the logic ground
can be a cause of improper operations. Therefore,
connect the logic ground as close and short as possible
to shunt resistors, RS, at a single-point ground (or star
ground) which is separated from the power ground (see
Figure 11-5).
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
17
SX68000MH Series
U1
VDC
VBB2 34
VBB1 27
CS
CDC
Here are filter circuit constants for reference:
RIN1x: 33 Ω to 100 Ω
RIN2x: 1 kΩ to 10 kΩ
CINx: 100 pF to 1000 pF
5 COM1
LS 18
15 COM2
Logic ground
Connect the COM1 and
COM2 pins on a PCB.
Figure 11-5.
11.2.5
RS
Create a single-point
ground (a star ground)
near R S, but keep it
separated from the
power ground.
Connections to Logic Ground
REG
This is the 7.5 V regulator output pin, which can be
used for a power supply of an external logic IC (e.g.,
Hall IC). A maximum output current of the REG pin is
35 mA. To stabilize the REG pin output, connect the pin
to a capacitor of about 0.1 μF.
11.2.6
HIN1, HIN2, and HIN3;
LIN1, LIN2, and LIN3
These are the input pins of the internal motor drivers
for each phase. The HINx pin acts as a high-side
controller; the LINx pin acts as a low-side controller.
Figure 11-6 shows an internal circuit diagram of the
HINx or LINx pin. This is a CMOS Schmitt trigger
circuit with a built-in 20 kΩ pull-down resistor, and its
input logic is active high.
Input signals applied across the HINx–COMx and the
LINx–COMx pins in each phase should be set within the
ranges provided in Table 11-1, below. Note that dead
time setting must be done for HINx and LINx signals
because the IC does not have a dead time generator.
The higher PWM carrier frequency rises, the more
switching loss increases. Hence, the PWM carrier
frequency must be set so that operational case
temperatures and junction temperatures have sufficient
margins against the absolute maximum ranges, specified
in Section 1.
If the signals from the microcontroller become
unstable, the IC may result in malfunctions. To avoid
this event, the outputs from the microcontroller output
line should not be high impedance. Also, if the traces
from the microcontroller to the HINx or LINx pin (or
both) are too long, the traces may be interfered by noise.
Therefore, it is recommended to add an additional filter
or a pull-down resistor near the HINx or LINx pin as
needed (see Figure 11-7).
Care should be taken when adding RIN1x and RIN2x to
the traces. When they are connected to each other, the
input voltage of the HINx and LINx pins becomes
slightly lower than the output voltage of the
microcontroller.
Table 11-1. Input Signals for HINx and LINx Pins
Parameter
Input
Voltage
Input Pulse
Width
PWM
Carrier
Frequency
Dead Time
High Level Signal
Low Level Signal
3 V < VIN < 5.5 V
0 V < VIN < 0.5 V
≥0.5 μs
≥0.5 μs
≤20 kHz
≥1.5 μs
U1
HINx
(LINx)
5V
2 kΩ
2 kΩ
20 kΩ
COM1
(COM2)
Figure 11-6.
Internal Circuit Diagram of HINx or
LINx Pin
U1
RIN1x
Input
signal
HINx/
LINx
RIN2x
SX6800xMH
Controller
Figure 11-7.
11.2.7
CINx
Filter Circuit for HINx or LINx Pin
VBB1 and VBB2
These are the input pins for the main supply voltage,
i.e., the positive DC bus. All of the power MOSFET
drains of the high-side are connected to these pins.
Voltages between the VBBx and COM2 pins should be
set within the recommended range of the main supply
voltage, VDC, given in Section 2.
The VBB1 and VBB2 pins should be connected
externally on a PCB. To suppress surge voltages, put a
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
18
SX68000MH Series
0.01 μF to 0.1 μF bypass capacitor, CS, near the VBBx
pin and an electrolytic capacitor, CDC, with a minimal
length of PCB traces to the VBBx pin.
11.2.8
at OCL or OCP activation. Also, inputting the inverted
signal of the FO pin to the SD pin permits all the highand low-side transistors to turn off, when the IC detects
an abnormal condition (i.e., some or all of the
protections such as TSD, OCP, and UVLO are activated).
LS
This pin is internally connected to the power
MOSFET source in each phase and the overcurrent
protection (OCP) circuit. For current detection, the LS
pin should be connected externally on a PCB via a shunt
resistor, RS, to the COMx pin.
For more details on the OCP, see Section 11.3.5.
When connecting the shunt resistor, place it as near as
possible to the IC with a minimum length of traces to the
LS and COMx pins. Otherwise, malfunction may occur
because a longer circuit trace increases its inductance
and thus increases its susceptibility to improper
operations. In applications where long PCB traces are
required, add a fast recovery diode, DRS, between the LS
and COMx pins in order to prevent the IC from
malfunctioning.
11.2.11 FO
This pin operates as the fault signal output and the
low-side shutdown signal input. Sections 11.3.1 and
11.3.2 explain the two functions in detail, respectively.
Figure 11-9 illustrates an internal circuit diagram of the
FO pin and its peripheral circuit.
VFO
U1
5V
RFO
FO
2 kΩ
INT
1 MΩ
3.0 µs (typ.)
Blanking
filter
50 Ω
CFO
QFO
Output SW turn-off
and QFO turn-on
COM
VBB2 34
VBB1 27
U1
VDC
CS
CDC
5 COM1
DRS
Add a fast recovery
diode to a long trace.
Figure 11-8.
11.2.9
Internal Circuit Diagram of FO Pin and
Its Peripheral Circuit
RS
LS 18
15 COM2
Figure 11-9.
Put a shunt resistor near
the IC with a minimum
length to the LS pin.
Connections to LS Pin
OCL
The OCL pin serves as the output of the overcurrent
protections which monitor the currents going through
the output transistors. In normal operation, the OCL pin
logic level is low. If the OCL pin is connected to the SD
pin so that the SD pin will respond to an OCL output
signal, the high-side transistors can be turned off when
the protections (OCP and OCL) are activated.
11.2.10 SD
When a 5 V or 3.3 V signal is input to the SD pin, the
high-side transistors turn off independently of any HINx
signals. This is because the SD pin does not respond to a
pulse shorter than an internal filter of 3.3 μs (typ.).
The SD–OCL pin connection, as described in Section
11.2.9, allows the IC to turn off the high-side transistors
Because of its open-collector nature, the FO pin
should be tied by a pull-up resistor, RFO, to the external
power supply. The external power supply voltage (i.e.,
the FO Pin Pull-up Voltage, VFO) should range from
3.0 V to 5.5 V.
When the pull-up resistor, RFO, has a too small
resistance, the FO pin voltage at fault signal output
becomes high due to the saturation voltage drop of a
built-in transistor, QFO. Therefore, it is recommended to
use a 3.3 kΩ to 10 kΩ pull-up resistor.
To suppress noise, add a filter capacitor, CFO, near the
IC with minimizing a trace length between the FO and
COMx pins.
To avoid the repetition of OCP activations, the
external microcontroller must shut off any input signals
to the IC within an OCP hold time, tP, which occurs after
the internal MOSFET (QFO) turn-on. tP is 20 μs where
minimum values of thermal characteristics are taken into
account. (For more details, see Section 11.3.5.) Our
recommendation is to use a 0.001 μF to 0.01 μF filter
capacitor.
11.3 Protections
This section describes the various protection circuits
provided in the SX68000MH series. The protection
circuits include the undervoltage lockout for power
supplies (UVLO), the overcurrent protection (OCP), and
the thermal shutdown (TSD).
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
19
SX68000MH Series
In case one or more of these protection circuits are
activated, the FO pin outputs a fault signal; as a result,
the external microcontroller can stop the operations of
the three phases by receiving the fault signal. The
external microcontroller can also shut down IC
operations by inputting a fault signal to the FO pin.
In the following functional descriptions, “HOx”
denotes a gate input signal on the high-side transistor,
whereas “LOx” denotes a gate input signal on the lowside transistor. “ VBx–HSx” refers to the voltages
between the VBx pin and output pins (U, V/V1, and
W1).
11.3.3
Undervoltage Lockout for Power
Supply (UVLO)
In case the gate-driving voltages of the output
transistors decrease, their steady-state power dissipations
increase. This overheating condition may cause
permanent damage to the IC in the worst case. To
prevent this event, the SX68000MH series has the
undervoltage lockout (UVLO) circuits for both of the
high- and low-side power supplies.
11.3.3.1. Undervoltage Lockout for Highside Power Supply (UVLO_VB)
11.3.1
Fault Signal Output
In case one or more of the following protections are
actuated, an internal transistor, QFO, turns on, then the
FO pin becomes logic low (≤0.5 V).
● Low-side undervoltage lockout (UVLO_VCC)
● Overcurrent protection (OCP)
● Thermal shutdown (TSD)
While the FO pin is in the low state, all the low-side
transistors turn off. In normal operation, the FO pin
outputs a high signal of 5 V. OCP The fault signal
output time of the FO pin at OCP activation is the OCP
hold time (tP) of 25 μs (typ.), fixed by a built-in feature
of the IC itself (see Section 11.3.5). The external
microcontroller receives the fault signals with its
interrupt pin (INT), and must be programmed to put the
HINx and LINx pins to logic low within the
predetermined OCP hold time, tP.
11.3.2
Figure 11-10 shows operational waveforms of the
undervoltage lockout for high-side power supply (i.e.,
UVLO_VB).
When the voltage between the VBx and output pins
(VBx–HSx) decreases to the Logic Operation Stop
Voltage (VBS(OFF) = 10.0 V) or less, the UVLO_VB
circuit in the corresponding phase gets activated and sets
an HOx signal to logic low.
When the voltage between the VBx and HSx pins
increases to the Logic Operation Start Voltage
(VBS(ON) = 10.5 V) or more, the IC releases the
UVLO_VB operation. Then, the HOx signal becomes
logic high at the rising edge of the first input command
after the UVLO_VB release.
Any fault signals are not output from the FO pin
during the UVLO_VB operation. In addition, the VBx
pin has an internal UVLO_VB filter of about 3 μs, in
order to prevent noise-induced malfunctions.
HINx
Shutdown Signal Input
The FO pin also acts as the input pin of shutdown
signals. When the FO pin becomes logic low, all the
low-side transistors turn off. The voltages and pulse
widths of the shutdown signals to be applied between
the FO and COMx pins are listed in Table 11-2.
0
LINx
0
UVLO_VB
operation
VBx-HSx
VBS(OFF)
Table 11-2. Shutdown Signals
VBS(ON)
UVLO release
0
Parameter
Input
Voltage
Input
Pulse
Width
High Level Signal
Low Level Signal
3 V < VIN < 5.5 V
0 V < VIN < 0.5 V
—
≥6 μs
HOx
About 3 µs
HOx restarts at
positive edge after
UVLO_VB release.
0
LOx
0
FO
No FO output at UVLO_VB.
0
Figure 11-10.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
UVLO_VB Operational Waveforms
20
SX68000MH Series
11.3.3.2. Undervoltage Lockout for Lowside Power Supply (UVLO_VCC)
Figure 11-11 shows operational waveforms of the
undervoltage lockout for low-side power supply (i.e.,
UVLO_VCC).
When the VCC2 pin voltage decreases to the Logic
Operation Stop Voltage (VCC(OFF) = 11.0 V) or less, the
UVLO_VCC circuit in the corresponding phase gets
activated and sets both of HOx and LOx signals to logic
low. When the VCC2 pin voltage increases to the Logic
Operation Start Voltage (VCC(ON) = 11.5 V) or more, the
IC releases the UVLO_VCC operation.
Then, the IC resumes the following transmissions: an
LOx signal according to an LINx pin input command; an
HOx signal according to the rising edge of the first
HINx pin input command after the UVLO_VCC release.
During the UVLO_VCC operation, the FO pin becomes
logic low and sends fault signals.
In addition, the VCC2 pin has an internal
UVLO_VCC filter of about 3 μs, in order to prevent
noise-induced malfunctions.
OCL circuit is activated. Then, the OCL pin goes logic
high.
During the OCL operation, the gate logic levels of the
low-side transistors respond to an input command on the
LINx pin.
To turn off the high-side transistors during the OCL
operation, connect the OCL and SD pins on a PCB. The
SD pin has an internal filter of about 3.3 μs (typ.).
When the LS pin voltage falls below VLIM (0.6500 V),
the OCL pin logic level becomes low.
After the OCL pin logic has become low, the highside transistors remain turned off until the first low-tohigh transition on an HINx input signal occurs (i.e.,
edge-triggered).
U1
0.65 V
18
2 kΩ
10
OCL
Filter
2 kΩ
LS
200 kΩ
200 kΩ
15
COM2
HINx
Figure 11-12.
0
Internal Circuit Diagram of OCL Pin
LINx
HINx
0
UVLO_VCC
operation
VCC2
VCC(OFF)
0
VCC(ON)
LINx
0
0
LS
HOx
VLIM
0
About 3 µs
LOx responds to input signal.
0
LOx
tBK(OCP)
OCL
(SD)
0
0
FO
0
3.3 µs (typ.)
HOx restarts at positive
edge after OCL release.
HOx
Figure 11-11.
UVLO_VCC Operational Waveforms
0
LOx
11.3.4
Overcurrent Limit (OCL)
The overcurrent limit (OCL) is a protection against
relatively low overcurrent conditions.
Figure 11-12 shows an internal circuit of the OCL
pin; Figure 11-13 shows OCL operational waveforms.
When the LS pin voltage increases to the Current
Limit Reference Voltage (VLIM = 0.6500 V) or more,
and remains in this condition for a period of the Current
Limit Blanking Time (tBK(OCP) = 2 μs) or longer, the
0
Figure 11-13.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
OCL Operational Waveforms
(OCL = SD)
21
SX68000MH Series
11.3.5
Overcurrent Protection (OCP)
The overcurrent protection (OCP) is a protection
against large inrush currents (i.e., high di/dt). Figure
11-14 is an internal circuit diagram describing the LS
pin and its peripheral circuit. The OCP circuit, which is
connected to the LS pin, detects overcurrents with
voltage across an external shunt resistor, R S. Because the
LS pin is internally pulled down, the LS pin voltage
increases proportionally to a rise in the current running
through the shunt resistor, RS.
U1
VBB1
● Keep the current through the output transistors below
the rated output current (pulse), IOP (see Section 1).
It is required to use a resistor with low internal
inductance because high-frequency switching current
will flow through the shunt resistor, R S. In addition,
choose a resistor with allowable power dissipation
according to your application.
Note that overcurrents are undetectable when one or
more of the U, V/V1/V2, and W1/W2 pins or their traces
are shorted to ground (ground fault). In case any of these
pins falls into a state of ground fault, the output
transistors may be destroyed.
27
VTRIP
HINx
-
2 kΩ
+
200 kΩ
Output SW turn-off
and QFO turn-on
Blanking
filter
1.65 µs (typ.)
0
LINx
0
LS
15 COM2
DRS
18 LS
VTRIP
RS
0
tBK
HOx responds to input signal.
HOx
COM
Figure 11-14.
tBK
tBK
Internal Circuit Diagram of LS Pin and
Its Peripheral Circuit
0
LOx
0
Figure 11-15 is a timing chart that represents
operation waveforms during OCP operation. When the
LS pin voltage increases to the OCP Threshold Voltage
(VTRIP = 1.0 V) or more, and remains in this condition
for a period of the OCP Blanking Time (tBK = 2 μs) or
longer, the OCP circuit is activated.
The enabled OCP circuit shuts off the low-side
transistors, and puts the FO pin into a low state.
Then, output current decreases as a result of the
output transistors turn-off. Even if the OCP pin voltage
falls below VTRIP, the IC holds the FO pin in the low
state for a fixed OCP hold time (tP) of 25 μs (typ.). Then,
the output transistors operate according to input signals.
The OCP is used for detecting abnormal conditions,
such as an output transistor shorted. In case short-circuit
conditions occur repeatedly, the output transistors can be
destroyed. To prevent such event, motor operation must
be controlled by the external microcontroller so that it
can immediately stop the motor when fault signals are
detected. To resume IC operations thereafter, set the IC
to be resumed after a lapse of ≥2 seconds.
For proper shunt resistor setting, your application
must meet the following:
● Use the shunt resistor that has a recommended
resistance, RS (see Section 2).
● Set the LS pin input voltage to vary within the rated
LS pin voltages, VLS (see Section 1).
FO restarts
automatically after tP.
FO
tP
0
Figure 11-15.
11.3.6
OCP Operational Waveforms
Thermal Shutdown (TSD)
The SX68000MH series incorporates the thermal
shutdown (TSD) circuit. Figure 11-16 shows TSD
operational waveforms. In case of overheating (e.g.,
increased power dissipation due to overload, or elevated
ambient temperature at the device), the IC shuts down
the low-side output transistors.
The TSD circuit in the MIC monitors temperatures
(see Section 6). When the temperature of the MIC
exceeds the TSD Operating Temperature (T DH = 150 °C),
the TSD circuit is activated. When the temperature of
the MIC decreases to the TSD Releasing Temperature
(TDL = 120 °C) or less, the shutdown operation is
released. The transistors then resume operating
according to input signals. During the TSD operation,
the FO pin becomes logic low and transmits fault signals.
Note that junction temperatures of the output transistors
themselves are not monitored; therefore, do not use the
TSD function as an overtemperature prevention for the
output transistors.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
22
SX68000MH Series
12.2 Considerations in IC Characteristics
Measurement
HINx
0
When measuring the breakdown voltage or leakage
current of the transistors incorporated in the IC, note that
the gate and emitter (source) of each transistor should
have the same potential. Moreover, care should be taken
during the measurement because each transistor is
connected as follows:
LINx
0
TSD operation
Tj(MIC)
TDH
TDL
0
HOx
0
LOx responds to input signal.
LOx
0
FO
0
Figure 11-16.
TSD Operational Waveforms
12. Design Notes
12.1 PCB Pattern Layout
Figure 12-1 shows a schematic diagram of a motor
drive circuit. The circuit consists of current paths having
high frequencies and high voltages, which also bring
about negative influences on IC operation, noise
interference, and power dissipation. Therefore, PCB
trace layouts and component placements play an
important role in circuit designing.
Current loops, which have high frequencies and high
voltages, should be as small and wide as possible, in
order to maintain a low-impedance state. In addition,
ground traces should be as wide and short as possible so
that radiated EMI levels can be reduced.
34
27
● All the high-side transistors (drains) are internally
connected to the VBBx pin.
● In the U-phase, the high-side transistor (source) and
the low-side toransistor (drain) are internally
connected, and are also connected to the U pin.
(In the V- and W-phases, the high- and low-side
transistors are unconnected inside the IC.)
The gates of the high-side transistors are pulled down
to the corresponding output (U, V/V1, and W1) pins;
similarly, the gates of the low-side transistors are pulled
down to the COM2 pin.
When measuring the breakdown voltage or leakage
current of the transistors, note that all of the output (U,
V/V1/V2, and W1/W2), LS, and COMx pins must be
appropriately connected. Otherwise, the switching
transistors may result in permanent damage.
The following are circuit diagrams representing
typical measurement circuits for breakdown voltage:
Figure 12-2 shows the high-side transistor (QUH) in the
U-phase; Figure 12-3 shows the low-side transistor
(QUL) in the U-phase. And all the pins that are not
represented in these figures are open.
When measuring the high-side transistors, leave all
the pins not be measured open. When measuring the
low-side transistors, connect the LS pin to be measured
to the COMx pin, then leave other unused pins open.
QWH
VBB1
27
34 VBB2
QVH
QUH
VBB2
VBB1
V
VDC
31 W1
29 V1
23 U
COM1 5
MIC
31
MIC
V1
29
U
23
V2
21
W2
19
18
Figure 12-1.
W1
21 V2
19 W2
Ground traces
should be wide
and short.
QWL
QVL
QUL
M
COM2 15
18 LS
LS
High-frequency, high-voltage
current loops should be as
small and wide as possible.
Figure 12-2. Typical Measurement Circuit for Highside Transistor (QUH) in U-phase
High-frequency, High-voltage Current
Paths
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
23
SX68000MH Series
QWH
13.1.1
27 VBB1
QVH QUH 34 VBB2
31 W1
29 V1
U
23
21 V2
COM1 5
MIC
19 W2
QWL
QVL
QUL
V
COM2
15
18
Power MOSFET Steady-state Loss,
PRON
Steady-state loss in a power MOSFET can be
computed by using the RDS(ON) vs. ID curves, listed in
Section 14.3.1. As expressed by the curves in Figure
13-1, linear approximations at a range the ID is actually
used are obtained by: RDS(ON) = α × ID + β. The values
gained by the above calculation are then applied as
parameters in Equation (4), below. Hence, the equation
to obtain the power MOSFET steady-state loss, PRON, is:
LS
PRON =
Figure 12-3. Typical Measurement Circuit for Lowside Transistor (QUL) in U-phase
13. Calculating Power Losses and
Estimating Junction Temperature
This section describes the procedures to calculate
power losses in switching transistors, and to estimate a
junction temperature. Note that the descriptions listed
here are applicable to the SX68000MH series, which is
controlled by a 3-phase sine-wave PWM driving
strategy.
For quick and easy references, we offer calculation
support tools online. Please visit our website to find out
more.
● DT0050: SX68000MH Calculation Tool
http://www.semicon.sanken-ele.co.jp/en/calctool/mosfet_caltool_en.html
1 π
∫ I (φ)2 × R DS(ON) (φ) × DT × dφ
2π 0 D
1
3
= 2√2α ( +
M × cos θ) IM 3
3π 32
1 1
+ 2β ( +
M × cos θ) IM 2 .
8 3π
(4)
Where:
ID is the drain current of the power MOSFET (A),
RDS(ON) is the drain-to-source on-resistance of the
power MOSFET (Ω),
DT is the duty cycle, which is given by
DT =
1 + M × sin(φ + θ)
,
2
M is the modulation index (0 to 1),
cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),
α is the slope of the linear approximation in the RDS(ON)
vs. ID curve, and
β is the intercept of the linear approximation in the
RDS(ON) vs. ID curve.
13.1 Power MOSFET
VCC = 15 V
4.0
3.5
3.0
RDS(ON) (Ω)
Total power loss in a power MOSFET can be
obtained by taking the sum of the following losses:
steady-state loss, PRON; switching loss, PSW; the steadystate loss of a body diode, PSD. In the calculation
procedure we offer, the recovery loss of a body diode,
PRR, is considered negligibly small compared with the
ratios of other losses.
The following subsections contain the mathematical
procedures to calculate these losses (PRON, PSW, and PSD)
and the junction temperature of all power MOSFETs
operating.
y = 0.29x + 2.14
125°C
2.5
75°C
2.0
1.5
25°C
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
ID (A)
Figure 13-1.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
Linear Approximate Equation of RDS(ON)
vs. ID Curve
24
SX68000MH Series
13.1.2
DT is the duty cycle, which is given by
Power MOSFET Switching Loss,
PSW
Switching loss in a power MOSFET can be calculated
by Equation (5) or (6), letting IM be the effective current
value of the motor.
● SX68001MH
PSW =
VDC
√2
× fC × αE × IM ×
.
π
150
(5)
DT =
M is the modulation index (0 to 1),
cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),
α is the slope of the linear approximation in the V SD vs.
ISD curve, and
β is the intercept of the linear approximation in the V SD
vs. ISD curve.
● SX68003MH
VDC
√2
× fC × αE × IM ×
.
π
300
1.2
1.0
(6)
Where:
fC is the PWM carrier frequency (Hz),
VDC is the main power supply voltage (V), i.e., the
VBBx pin input voltage, and
αE is the slope on the switching loss curve (see Section
14.3.2).
VSD (V)
PSW =
1 + M × sin(φ + θ)
,
2
25°C
0.8
y = 0.25x + 0.54
0.6
125°C
0.4
75°C
0.2
0.0
0.0
0.5
1.0
1.5
2.0
ISD (A)
13.1.3
Body Diode Steady-state Loss, PSD
Steady-state loss in the body diode of a power
MOSFET can be computed by using the V SD vs. ISD
curves, listed in Section 14.3.1. As expressed by the
curves in Figure 13-2, linear approximations at a range
the ISD is actually used are obtained by: VSD = α × ISD +
β.
The values gained by the above calculation are then
applied as parameters in Equation (7), below. Hence, the
equation to obtain the body diode steady-state loss, PSD,
is:
PSD =
1 π
∫ V (φ) × ISD (φ) × (1 − DT) × dφ
2π 0 SD
1 1
4
= α( −
M × cos θ) IM 2
2 2 3π
√2 1 π
+
β ( − M × cos θ) IM .
π
2 8
Figure 13-2.
13.1.4
Linear Approximate Equation of V SD vs.
ISD Curve
Estimating Junction Temperature
of Power MOSFET
The junction temperature of all power MOSFETs
operating, TJ, can be estimated with Equation (8):
TJ = R J−C × {(PRON + PSW + PSD ) × 6} + TC .
(8)
Where:
RJ-C is the junction-to-case thermal resistance (°C/W)
of all the power MOSFETs operating, and
TC is the case temperature (°C), measured at the point
defined in Figure 3-1.
(7)
Where:
VSD is the source-to-drain diode forward voltage of the
power MOSFET (V),
ISD is the source-to-drain diode forward current of the
power MOSFET (A),
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
25
SX68000MH Series
14. Performance Curves
14.1 Transient Thermal Resistance Curves
The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steadystate thermal resistance = 1.
Ratio of Transient Thermal
Resistance
1.00
0.10
0.01
0.001
0.01
Ratio of Transient Thermal
Resistance
Figure 14-1.
0.1
Time (s)
1
10
Transient Thermal Resistance: SX68001MH
1.00
0.10
0.01
0.001
0.01
Figure 14-2.
0.1
Time (s)
1
10
Transient Thermal Resistance: SX68003MH
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
26
SX68000MH Series
14.2 Performance Curves of Control Parts
Figure 14-3 to Figure 14-27 provide performance curves of the control parts integrated in the SX68000MH series,
including variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of the
control parts.
Table 14-1. Typical Characteristics of Control Parts
Figure Number
Figure 14-3
Figure 14-4
Figure 14-5
Figure 14-6
Figure 14-7
Figure 14-8
Figure 14-9
Figure 14-10
Figure 14-11
Figure 14-12
Figure 14-13
Figure 14-14
Figure 14-15
Figure 14-16
Figure 14-17
Figure 14-18
Figure 14-19
Figure 14-20
Figure 14-21
Figure 14-22
Figure 14-23
Figure 14-24
Figure 14-25
Figure 14-26
Figure 14-27
Figure 14-28
Figure Caption
Logic Supply Current, ICC vs. TC (INx = 0 V)
Logic Supply Current, ICC vs. TC (INx = 5 V)
Logic Supply Current, ICC vs. VCCx Pin Voltage, VCC
Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. TC
Logic Supply Current in 1-phase Operation (HINx = 5 V), IBS vs. TC
VBx Pin Voltage, VB vs. Logic Supply Current, IBS (HINx = 0 V)
Logic Operation Start Voltage, VBS(ON) vs. TC
Logic Operation Stop Voltage, VBS(OFF) vs. TC
Logic Operation Start Voltage, VCC(ON) vs. TC
Logic Operation Stop Voltage, VCC(OFF) vs. TC
UVLO_VB Filtering Time vs. T C
UVLO_VCC Filtering Time vs. T C
High Level Input Signal Threshold Voltage, VIH vs. TC
Low Level Input Signal Threshold Voltage, V IL vs. TC
Input Current at High Level (HINx or LINx), I IN vs. TC
High-side Turn-on Propagation Delay vs. TC (from HINx to HOx)
Low-side Turn-on Propagation Delay vs. TC (from LINx to LOx)
Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC
Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC
SD Pin Filtering Time vs. TC
FO Pin Filtering Time vs. TC
Current Limit Reference Voltage, V LIM vs. TC
OCP Threshold Voltage, VTRIP vs. TC
OCP Hold Time, tP vs. TC
OCP Blanking Time, tBK(OCP) vs. TC; Current Limit Blanking Time, tBK(OCL) vs. TC
REG Pin Voltage, VREG vs. TC
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
27
VCCx = 15 V, HINx = 0 V, LINx = 0 V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max.
Typ.
Min.
-30
0
30
60
90
120
ICC (mA)
ICC (mA)
SX68000MH Series
VCCx = 15 V, HINx = 5 V, LINx = 5 V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max.
Typ.
Min.
-30
150
0
30
Figure 14-3.
Logic Supply Current, ICC vs. TC
(INx = 0 V)
Figure 14-4.
HINx = 0 V, LINx = 0 V
3.8
120
150
VBx = 15 V, HINx = 0 V
200
Max.
IBS (µA)
3.4
3.2
125°C
25°C
3.0
−30°C
2.8
150
Typ.
Min.
100
50
2.6
0
12
13
14
15
16
17
18
19
20
-30
0
30
60
VCC (V)
Figure 14-5.
90
120
150
TC (°C)
Logic Supply Current, ICC vs. VCCx Pin
Voltage, VCC
Figure 14-6.
Logic Supply Current in 1-phase Operation
(HINx = 0 V), IBS vs. TC
VBx = 15 V, HINx = 5 V
300
VBx = 15 V, HINx = 0 V
180
250
Max.
200
Typ.
150
Min.
100
160
140
IBS (µA)
IBS (µA)
90
Logic Supply Current, ICC vs. TC (INx = 5 V)
250
3.6
ICC (mA)
60
TC (°C)
TC (°C)
120
125°C
100
25°C
80
50
−30°C
60
0
40
-30
0
30
60
90
120
150
12
13
TC (°C)
Figure 14-7. Logic Supply Current in 1-phase
Operation (HINx = 5 V), IBS vs. TC
14
15
16
17
18
19
20
VB (V)
Figure 14-8.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
VBx Pin Voltage, VB vs. Logic Supply
Current, IBS (HINx = 0 V)
28
11.5
11.3
11.1
10.9
10.7
10.5
10.3
10.1
9.9
9.7
9.5
Max.
Typ.
Min.
-30
0
30
60
90
120
VBS(OFF) (V)
VBS(ON) (V)
SX68000MH Series
11.0
10.8
10.6
10.4
10.2
10.0
9.8
9.6
9.4
9.2
9.0
Max.
Typ.
Min.
-30
150
0
30
TC (°C)
Logic Operation Start Voltage, VBS(ON)
vs. TC
12.5
12.3
12.1
11.9
11.7
11.5
11.3
11.1
10.9
10.7
10.5
Max.
Typ.
Min.
-30
0
30
60
90
120
Figure 14-10.
VCC(OFF) (V)
VCC(ON) (V)
Figure 14-9.
Max.
Typ.
Min.
-30
0
Typ.
Min.
60
90
120
150
Figure 14-12.
UVLO_VB Filtering Time (µs)
UVLO_VB Filtering Time (µs)
Max.
30
30
60
90
120
150
Logic Operation Stop Voltage, VCC(OFF)
vs. TC
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max.
Typ.
Min.
-30
0
TC (°C)
Figure 14-13.
150
TC (°C)
Logic Operation Start Voltage, VCC(ON)
vs. TC
0
120
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-30
90
Logic Operation Stop Voltage, VBS(OFF)
vs. TC
TC (°C)
Figure 14-11.
60
TC (°C)
UVLO_VB Filtering Time vs. TC
30
60
90
120
150
TC (°C)
Figure 14-14.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
UVLO_VCC Filtering Time vs. TC
29
SX68000MH Series
2.6
2.0
2.4
1.8
2.0
Max.
1.8
Typ.
1.6
Min.
1.4
Max.
1.6
VIL (V)
VIH (V)
2.2
1.4
Typ.
1.2
Min.
1.0
1.2
1.0
0.8
-30
0
30
60
90
120
150
-30
0
30
TC (°C)
Figure 14-15.
High Level Input Signal Threshold
Voltage, VIH vs. TC
Max.
300
250
Typ.
200
Min.
150
100
50
0
30
60
90
120
Max.
Typ.
600
Min.
500
400
300
200
100
0
150
-30
0
30
60
90
120
150
TC (°C)
Input Current at High Level (HINx or
LINx), IIN vs. TC
Figure 14-18.
High-side Turn-on Propagation Delay vs.
TC (from HINx to HOx)
400
700
350
600
Max.
500
Typ.
400
Min.
300
200
100
Max.
300
tHIN(MIN) (ns)
Low-side Turn-on
Propagation Delay (ns)
150
Low Level Input Signal Threshold
Voltage, VIL vs. TC
TC (°C)
Figure 14-17.
120
700
0
-30
90
800
High-side Turn-on
Propagation Delay (ns)
350
IIN (µA)
Figure 14-16.
INHx/INLx = 5 V
400
60
TC (°C)
Typ.
250
Min.
200
150
100
50
0
0
-30
0
30
60
90
120
150
-30
TC (°C)
Figure 14-19. Low-side Turn-on Propagation Delay
vs. TC (from LINx to LOx)
0
30
60
90
120
150
TC (°C)
Figure 14-20. Minimum Transmittable Pulse Width for
High-side Switching, tHIN(MIN) vs. TC
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
30
SX68000MH Series
400
6
350
Max.
5
Typ.
4
250
Min.
200
tSD (ns)
tLIN(MIN) (ns)
300
Max.
3
Typ.
150
2
Min.
100
1
50
0
0
-30
0
30
60
90
120
150
-30
0
30
60
TC (°C)
90
120
Figure 14-21. Minimum Transmittable Pulse Width
for Low-side Switching, tLIN(MIN) vs. TC
Figure 14-22.
SD Pin Filtering Time vs. TC
0.750
6
0.725
5
4
Max.
3
Typ.
2
VLIM (ns)
0.700
tFO (ns)
150
TC (°C)
Min.
Max.
0.675
Typ.
0.650
Min.
0.625
0.600
1
0.575
0.550
0
-30
0
30
60
90
120
-30
150
0
30
FO Pin Filtering Time vs. TC
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
Figure 14-24.
Max.
Typ.
Min.
tP (µs)
VTRIP (ns)
Figure 14-23.
0
30
60
120
50
45
40
35
30
25
20
15
10
5
0
150
Max.
Typ.
Min.
90
120
0
150
OCP Threshold Voltage, VTRIP vs. TC
30
60
90
120
150
TC (°C)
TC (°C)
Figure 14-25.
90
Current Limit Reference Voltage, VLIM vs.
TC
-30
-30
60
TC (°C)
TC (°C)
Figure 14-26.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
OCP Hold Time, tP vs. TC
31
SX68000MH Series
3.5
tBK (µs)
3.0
2.5
Max.
2.0
Typ.
Min.
1.5
1.0
0.5
0.0
-30
0
30
60
90
120
150
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
Max.
Typ.
VREG (V)
4.0
Min.
-30
0
TC (°C)
Figure 14-27. OCP Blanking Time, tBK(OCP) vs. TC;
Current Limit Blanking Time, tBK(OCL) vs. TC
30
60
90
120
150
TC (°C)
Figure 14-28.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
REG Pin Voltage, VREG vs. TC
32
SX68000MH Series
14.3 Performance Curves of Output Parts
14.3.1
Output Transistor Performance Curves
3.5
1.0
2.5
VSD (V)
RDS(ON) (Ω)
1.2
25°C
125°C
3.0
75°C
2.0
1.5
0.8
0.6
75°C
0.4
25°C
1.0
SX68001MH
VCCx = 15 V
4.0
SX68001MH
14.3.1.1. SX68001MH
125°C
0.2
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
ID (A)
Figure 14-29.
1.5
2.0
ISD (A)
Power MOSFET RDS(ON) vs. ID
Figure 14-30.
Power MOSFET VSD vs. ISD
1.2
25°C
25°C
1.0
125°C
75°C
SX68003MH
SX68003MH
VCCx = 15 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VSD (V)
RDS(ON) (Ω)
14.3.1.2. SX68003MH
0.8
0.6
125°C
75°C
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
Figure 14-31.
Power MOSFET RDS(ON) vs. ID
1.0
1.5
2.0
2.5
ISD (A)
ID (A)
Figure 14-32.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
Power MOSFET VSD vs. ISD
33
SX68000MH Series
14.3.2
Switching Loss Curves
Switching Loss, E, is the sum of turn-on loss and turn-off loss.
14.3.2.1. SX68001MH
50
VCC = 15 V
60
50
TJ = 125°C
40
TJ = 125°C
E (µJ)
E (µJ)
40
30
20
10
SX68001MH
VB = 15 V
60
SX68001MH
Conditions: VBBx pin voltage = 150 V, half-bridge circuit with inductive load.
30
20
10
TJ = 25°C
0
TJ = 25°C
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
ID (A)
Figure 14-33.
1.0
1.5
2.0
ID (A)
High-side Switching Loss
Figure 14-34.
Low-side Switching Loss
14.3.2.2. SX68003MH
300
VCC = 15 V
350
300
250
TJ = 125°C
200
E (µJ)
E (µJ)
250
SX68003MH
VB = 15 V
350
SX68003MH
Conditions: VBBx pin voltage = 300 V, half-bridge circuit with inductive load.
150
100
TJ = 125°C
200
150
100
TJ = 25°C
50
50
0
TJ = 25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
ID (A)
Figure 14-35.
High-side Switching Loss
1.0
1.5
2.0
2.5
ID (A)
Figure 14-36.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
Low-side Switching Loss
34
SX68000MH Series
14.4 Allowable Effective Current Curves
The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters such
as typical RDS(ON) or VCE(SAT), and typical switching losses.
14.4.1
SX68001MH
Operating conditions: VBBx pin input voltage, VDC = 150 V; VCCx pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, T J = 150 °C.
fC = 2 kHz
Allowable Effective Current (Arms)
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC (°C)
Figure 14-37.
Allowable Effective Current (fC = 2 kHz): SX68001MH
fC = 16 kHz
Allowable Effective Current (Arms)
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC (°C)
Figure 14-38.
Allowable Effective Current (fC = 16 kHz): SX68001MH
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
35
SX68000MH Series
14.4.2
SX68003MH
Operating conditions: VBBx pin input voltage, VDC = 300 V; VCCx pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, T J = 150 °C.
fC = 2 kHz
Allowable Effective Current (Arms)
1.5
1.2
0.9
0.6
0.3
(0.0)
25
50
75
100
125
150
TC (°C)
Figure 14-39.
Allowable Effective Current (fC = 2 kHz): SX68003MH
fC = 16 kHz
Allowable Effective Current (Arms)
1.5
1.2
0.9
0.6
0.3
(0.0)
25
50
75
100
125
150
TC (°C)
Figure 14-40.
Allowable Effective Current (fC = 16 kHz): SX68003MH
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
36
SX68000MH Series
15. Pattern Layout Example
This section contains the schematic diagrams of a PCB pattern layout example using an SX68000MH series device.
For details on the land pattern example of the IC, see Section 9.
Figure 15-1.
Pattern Layout Example (Two-layer Board)
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
37
SX68000MH Series
IPM1
1 VB2
C2
C6
2 V
VB32 36
VBB2 34
VB31 32
C7
4 VCC1
C3
W1 31
C8
5
6
7
8
CN3
10
R1
9
COM1
HIN3
V1 29
HIN2
HIN1 VBB1 27
9 SD
CN1
CX1
1
VB1 24
2
C5
8
10 OCL
7
U 23
6
11 LIN3
12 LIN2
13 LIN1
14 REG
15 COM2
5
4
3
2
1
C1
CN2
V2 21
W2 19
3
2
1
C17
CN4
16 VCC2
6
5
17 FO
R2
4
R8
18 LS
3
2
1
C10
C4
C9
Figure 15-2.
C11
C12
R10
R9
Circuit Diagram of PCB Pattern Layout Example
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
38
SX68000MH Series
16. Typical Motor Driver Application
This section contains the information on the typical motor driver application listed in the previous section, including
a circuit diagram, specifications, and the bill of the materials used.
● Motor Driver Specifications
IC
SX68003MH
Main Supply Voltage, VDC
300 VDC (typ.)
Rated Output Power
50 W
● Circuit Diagram
See Figure 15-2.
● Bill of Materials
Symbol
Part Type
Electrolytic
C1
Electrolytic
C2
Electrolytic
C3
Electrolytic
C4
Ceramic
C5
Ceramic
C6
Ceramic
C7
Ceramic
C8
Ceramic
C9
Ceramic
C10
Ceramic
C11
Ceramic
C16
Ceramic
C17
Ratings
Symbol
Part Type
Ratings
22 μF, 35 V
CX1
Film
0.01 μF, 630 V
22 μF, 35 V
R1
R2
R8*
R9*
R10*
IPM1
CN1
CN2
CN3
CN4
General
0 Ω, 1/8 W
General
4.7 kΩ, 1/8 W
Metal plate
10 kΩ, 1/8 W
Metal plate
1 Ω, 2 W
General
Open
IC
SX68003MH
Pin header
Equiv. to B2P3-VH
Pin header
Equiv. to B2P5-VH
Connector
Equiv. to MA10-1
Connector
Equiv. to MA06-1
22 μF, 35 V
47 μF, 35 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
100 pF, 50 V
0.1 μF, 50 V
* Refers to a part that requires adjustment based on operation performance in an actual application.
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
39
SX68000MH Series
Important Notes
● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation
equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety
devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix
your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the
Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result
in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan
(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and
losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific
Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
chemically or otherwise processing or treating or both the same, you must duly consider all possible risks that may result from all
such uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any
human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products.
Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
use of the Sanken Products.
● Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third
party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you,
users or any third party, resulting from the Information.
● No information in this document can be transcribed or copied or both without Sanken’s prior written consent.
● Regarding the Information, no license, express, implied or otherwise, is granted hereby under any intellectual property rights and
any other rights of Sanken.
● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,
including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty
of merchantability, and implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is
delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course
of dealing or usage of trade, and (iv) as to the Information (including its accuracy, usefulness, and reliability).
● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and
regulations that regulate the inclusion or use or both of any particular controlled substances, including, but not limited to, the EU
RoHS Directive, so as to be in strict compliance with such applicable laws and regulations.
● You must not use the Sanken Products or the Information for the purpose of any military applications or use, including but not
limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Information, or
providing them for non-residents, you must comply with all applicable export control laws and regulations in each country
including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and
follow the procedures required by such applicable laws and regulations.
● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to the
relevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).
DSGN-CEZ-16003
SX68000MH-DSE Rev.2.3
SANKEN ELECTRIC CO., LTD.
Jun. 16, 2020
http://www.sanken-ele.co.jp/en/
© SANKEN ELECTRIC CO., LTD. 2018
40
工商网监
湘ICP备2023018690号
