TM1261

TO-220F 12A Triac TM1241S-R, TM1261S-R s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=12A qGate trigger current: IGT=8mA max (MODE , , qFor resistive load qUL approved type available External Dimensions (Unit: mm) φ 3.3±0.2 16.9±0.3 8.4±0.2 0.2 10.0±0.2 4.2±0.2 C 0.5 2.8 0.8±0.2 ) 4.0± qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min a b 1.35±0.15 1.35± +0.2 0.85 – 0.1 0.15 3.9± 0.2 2.54 2.2±0.2 2.54 +0.2 0.45 – 0.1 2.4±0.2 a. Part Number b. Lot Number (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO Ratings TM1241S-R 400 12 110 — 2 5 0.5 – 40 to +125 – 40 to +125 1500 TM1261S-R 600 Unit V A A V A W W °C °C Vrms Conditions Conduction angle 360°, Tc=84°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current On-state voltage (Tj=25°C, unless otherwise specified) Symbol IDRM VTM Ratings min typ max 2.0 0.1 1.6 1.1 1.8 1.2 1.2 8 8 8 0.6 0.7 2.1 5 4.5 5 25 0.1 6 3.0 Unit mA V Conditions VD=VDRM, RGK=∞, Tj=125°C VD=VDRM, RGK=∞, Tj=25°C Pulse test, ITM=16A T2 , G V VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth 58 TM1241S-R, TM1261S-R vT – iT Characteristics (max) 100 50 ITSM Ratings 120 Gate Characteristics Tj= –20°C 20 Tj= –40°C 30 Surge on-state current ITSM (A) iT (A) 10 5 On-state current Tj=125°C Tj=25°C 80 60 vGF ( V) 10 ms 1cycle 1 0 0 8 Gate voltage Gate trigger current IGT (mA) 6 1 0.5 40 4 2 0 0 1 2 3 See graph at the upper right 20 0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 On-state voltage vT ( V ) Number of cycle Gate current iGF (A) IT(RMS) – PT(AV) Characteristics 18 IT(RMS) – Tc Ratings 150 Full-cycle sinewave Conduction angle :360° IT(RMS) – Ta Ratings 150 Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind IH temperature Characteristics (Typical) 50 (RGK=∞) Average on-state power PT(AV) (W) 16 14 12 10 8 6 4 2 0 Full-cycle sinewave Conduction angle :360° Ambient temperature Ta (°C) 125 125 100 Case temperature TC (°C) 100 Holding current IH (mA) 10 5 75 75 50 25 0 50 25 0 1 0.5 –40 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 Tj=25°C 10 100 Initial junction temperature Tj=125°C ITSM Gate trigger voltage VGT ( V) 12 3 2 10 RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) Junction temperature Tj (°C) W =5 P GM 75 100 125 Pulse trigger temperature Characteristics (MODE – ) vgt ( Typical) (MODE – ) (MODE – ) trigger VGT DC gateat 25°C voltage ) ) trigger VGT DC gateat 25°C voltage trigger VGT DC gateat 25°C voltage ( ( ) vgt ( Gate trigger voltage) at Ta and tw vgt ( Gate trigger voltage) at Ta and tw gt Gate trigger voltage at Ta and tw ( 1.5 vgt Ta= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C ) 2.0 2.0 1.5 Ta= – 40°C vgt –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 2.0 1.5 Ta= – 40°C vgt –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 1.0 1.0 1.0 v ( 0.5 0.5 1 10 100 1000 0.5 0.5 1 10 100 1000 0.5 0.5 1 10 100 1000 Pulse width tw ( µs) Pulse width tw ( µs) Pulse width tw ( µs) Pulse trigger temperature Characteristics (MODE – ) 30 trigger IGT DC gateat 25°C current igt (Typical) (MODE – ) 30 trigger IGT DC gateat 25°C current (MODE – ) 30 trigger IGT DC gateat 25°C current igt 10 5 igt (Gate trigger current ) at Ta and tw igt (Gate trigger current ) at Ta and tw gt Gate trigger current at Ta and tw tw Ta= – 40°C –20°C 0°C 25°C 50°C 75°C 100°C 125°C 10 5 Ta= – 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C igt 10 5 Ta= – 40°C igt –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C ) ) ( ( ) ( ) 1 0.5 0.2 0.5 1 1 0.5 1 0.5 i ( 0.2 0.5 1 10 100 1000 0.2 0.5 1 10 100 1000 10 100 1000 Pulse width t w ( µs) Pulse width t w ( µs) Pulse width t w ( µs) VGT temperature characteristics ( Typical) 1.8 1.6 (VD=20V, RL=40Ω) IGT temperature characteristics ( Typical) 50 (VD=20V, RL=40Ω) Transient thermal resistance Characteristics 100 rth (°C/W) Gate trigger voltage VGT (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –40 0 MO DE Gate trigger current IGT (mA) Junction to operating environment 10 10 MOD MOD E Transient thermal resistance ( T2 + ,G + ) MODE MODE MODE (T2–, G– ) (T2+, G+ ) (T2+, G– ) E (T2–,G – (T2+,G – ) ) 5 Junction to case 1 0.1 0.05 0.1 1 10 10 2 10 3 10 4 10 5 25 50 75 100 125 1 –40 0 25 50 75 100 125 Junction temperature Tj (°C) Junction temperature Tj (°C) t, Time (ms) 59