TM1262B-R

TO-3PF 12A Triac TM1262B-R s Features qRepetitive peak off-state voltage: VDRM=600V qRMS on-state current: IT(RMS)=12A qGate trigger current: IGT=8mA max (MODE , , qIsolation voltage: VISO=2000V(AC, 1min.) qFor resistive load qUL approved type available 5.45± 0.1 15.6± 0.2 1.5 4.4 1.5 External Dimensions (Unit: mm) 3.2± 0.2 5.5± 0.2 9.5± 0.2 5.5± 0.2 3.45± 0.2 1.6 3.3 ) 23± 0.3 a b 3.35± 0.2 +0.2 1.75–0.1 +0.2 2.15 –0.1 +0.2 1.05–0.1 5.45± 0.1 (16.2) +0.2 0.65–0.1 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 6.5g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT(RMS) ITSM IGM PGM PG(AV) Tj Tstg VISO Ratings 600 12 120 2 5 0.5 – 40 to +125 – 40 to +125 2000 Unit V A A A W W °C °C Vrms Conditions RGK= ∞, Tj= –40°C to +125°C Conduction angle 360°, Tc=98°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C f f 50Hz, duty 50Hz, duty 10% 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current On-state voltage Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.6 0.8 1.1 0.6 0.7 2.1 2.0 5.0 4.5 5.0 25 8.0 8.0 8.0 2.0 2.0 0.1 6 2.0 1.8 1.2 1.2 0.4 0.4 Unit mA V Conditions VD=VDRM, RGK= ∞, Tj=125°C VD=VDRM, RGK= ∞, Tj=25°C ITM=16A, TC=25°C T2 , G V VD=20V, RL=40Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=20V, RL=40Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W VD=1/2 × VDRM, Tj=125°C Tj=25°C Junction to case Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth 60 TM1262B-R vT – iT Characteristics (max) 100 Surge on-state current ITSM (A) ITSM Ratings 140 120 100 80 60 40 20 0 Initial junction temperature Tj=125°C ITSM 10 ms 1cycle IT(RMS) – PT(AV) Characteristics 14 Full-cycle sinewave Tj =125°C 10 Tj =25°C Average on-state power PT(AV) (W) 12 Conduction angle :360° 10 8 6 4 2 0 On-state current iT (A) 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 1 5 10 50 100 0 2 4 6 8 10 12 On-state voltage vT ( V ) Number of cycle RMS on-state current IT(RMS) (A) IT(RMS) – Tc Ratings 150 Full-cycle sinewave Conduction angle :360° Gate Characteristics 50 Mode VGM =10V PGM =5W 25°C VGT1=1.8V – 40°C VGT1=2.2V PG(AV) =0.5W –40°C VGT2,3=1.5V –40°C IGT=25mA VGT temperature characteristics ( Typical) 2.4 2.0 1.6 1.2 0.8 0.4 0 –40 (VD =20V RL =40 Ω ) Mode Gate trigger voltage VGT (V) Case temperature TC (°C) 125 100 75 50 25 0 0 2 4 6 8 10 12 14 RMS on-state current IT(RMS) (A) vGF ( V) Gate voltage 10 5 25°C 5 V =1.2V GT2.3 0.1 VGD=0.1V 1 10 25°C IGT=8mA 100 1000 IGM =2A 5000 1 0 25 50 75 100 125 Gate current iGF (mA) Junction temperature Tj (°C) VGT ( Mode ( Typical) 2.4 2.0 1.6 1.2 0.8 0.4 0 –40 ) temperature characteristics (VD =20V RL =40 Ω ) IGT temperature characteristics ( Typical) 50 Gate trigger current IGT (mA) (VD =20V RL =40 Ω ) IH temperature characteristics ( Typical) 50 (RG-K =1kΩ) Gate trigger voltage VGT (V) 10 5 Holding current IH (mA) 0 25 50 75 100 125 10 5 1 0.5 –40 1 0.5 –40 0 25 50 75 100 125 0 25 50 75 100 125 Junction temperature Tj (°C) Junction temperature Tj (°C) Junction temperature Tj (°C) IL temperature characteristics ( Typical) 1000 (RG-K =∞) rth( j-c) – t Characteristics Transient thermal resistance rth (j-c) (°C/W) 5 Latching current IL (mA) 100 10 1 1 –40 0 25 50 75 100 125 0.5 1 10 102 103 104 105 Junction temperature Tj (°C) t, Time (ms) 61