TM341

TO-220F 3A Triac TM341S-L, TM361S-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRms on-state current: IT(RMS)=3A qGate trigger current: IGT=20mA max (MODE , , qUL approved type available External Dimensions (Unit: mm) φ 3.3±0.2 16.9±0.3 8.4±0.2 0.2 10.0± 0.2 4.2±0.2 C 0.5 2.8 3.9±0.2 0.8±0.2 ) 4.0± qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min a b 1.35±0.15 1.35± +0.2 0.85 – 0.1 0.15 2.54 2.2±0.2 2.54 +0.2 0.45 – 0.1 2.4±0.2 a. Part Number b. Lot Number (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO Ratings TM341S-L 400 3.0 30 6 0.5 3 0.3 – 40 to +125 – 40 to +125 1500 TM361S-L 600 Unit V A A V A W W °C °C Vrms Conditions Conduction angle 360°, Tc=109°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current On-state voltage (Tj=25°C, unless otherwise specified) Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.6 0.7 2.0 2.0 2.0 20 20 20 0.7 0.8 0.8 8 10 12 15 0.2 10 5.0 Unit mA V Conditions VD=VDRM, RGK=∞, Tj=125°C VD=VDRM, RGK=∞, Tj=25°C Pulse test, ITM=5A T2 , G V VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth 30 TM341S-L, TM361S-L vT – iT Characteristics (max) 100 50 ITSM Ratings 50 Gate Characteristics Initial junction temperature Tj=125°C ITSM Gate trigger voltage VGT ( V) 14 12 4 Tj= –40°C 60 Surge on-state current ITSM (A) vGF ( V) 2 10 5 Tj=125°C 10 8 6 4 On-state current 30 0 Gate voltage 0 20 Tj=25°C 20 50Hz Gate trigger current IGT (mA) 1 0.5 Tj=25°C 10 2 0 0 0 See graph at the upper right 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 On-state voltage vT ( V ) 0.5 1.0 Tj= –20°C 40 40 iT (A) 10 ms 1cycle 1.5 Number of cycle Gate current iGF (A) IT(RMS) – PT(AV) Characteristics 5 IH temperature Characteristics IT(RMS) – Tc Ratings 150 Full-cycle sinewave Conduction angle : 360° IT(RMS) – Ta Ratings 150 Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind (Typical) 10 (VD =30V, IP=3.0A, RGK= ∞) Average on-state power PT(AV) (W) θ1 100 75 100 Holding current IH (mA) θ2 Case temperature TC (°C) 4 Ambient temperature Ta (°C) Full-cycle sinewave Conduction angle θ = θ1+ θ2 =360° 125 125 3 (T2 – T1 ) 5 ( T2 – T1 ) – + + – 75 2 50 25 0 50 1 25 0 0 – 40 0 0 1 2 3 4 5 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) Junction temperature Tj (°C) Pulse trigger temperature Characteristics (MODE – ) vgt ( Typical) (MODE – ) (MODE – ) 50% ) ) trigger VGT DC gateat 25°C voltage trigger VGT DC gateat 25°C voltage 50% trigger VGT DC gateat 25°C voltage vgt 10 vgt 10 ) 30 30 30 vgt 50% tw Tj= – 40°C –20°C 25°C 75°C 125°C tw Tj= – 40°C –20°C 25°C 75°C 125°C 10 tw Tj= – 40°C –20°C 25°C 75°C 125°C ( ( ) vgt ( Gate trigger voltage) at Ta and tw 1 1 vgt ( Gate trigger voltage) at Ta and tw 102 103 104 gt Gate trigger voltage at Ta and tw ( 1 v ( 0.1 0.5 1 10 102 103 104 0.1 0.5 1 10 0.1 0.5 1 10 102 103 104 Pulse width tw ( µs) Pulse width tw ( µs) Pulse width tw ( µs) Pulse trigger temperature Characteristics (MODE – ) 30 trigger IGT DC gateat 25°C current igt (Typical) (MODE – ) 30 trigger IGT DC gateat 25°C current (MODE – ) 30 50% trigger IGT DC gateat 25°C current igt 50% igt 10 Tj= – 40°C –20°C 25°C 75°C 125°C igt 10 Tj= – 40°C –20°C 25°C 75°C 125°C 50% ) ) ) 10 Tj= – 40°C –20°C 25°C 75°C 125°C tw tw tw ( ( ) igt (Gate trigger current ) at Ta and tw igt (Gate trigger current ) at Ta and tw gt Gate trigger current at Ta and tw ( 1 1 1 ( 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 i 10 10 2 103 10 4 Pulse width t w ( µs) Pulse width t w ( µs) Pulse width t w ( µs) VGT temperature characteristics ( Typical) 1.2 1.0 MODE MODE MODE (VD=6V, RL=10Ω) IGT temperature characteristics ( Typical) 24 20 MODE MODE MODE 10 (T2–,G– ) (T2+,G– ) (T2+,G+ ) (VD=6V, RL=10Ω) Transient thermal resistance Characteristics 100 rth (°C/W) Gate trigger current IGT (mA) Gate trigger voltage VGT (V) (T2–,G– ) (T2+,G+ ) (T2+,G– ) Junction to operating environment 10 0.8 0.6 0.4 0.2 0 – 40 Transient thermal resistance Junction to case 1 0 25 50 75 100 125 0 –40 0 25 50 75 100 125 0.1 0.1 1 10 10 2 10 3 10 4 10 5 Junction temperature Tj (°C) Junction temperature Tj (°C) t, Time (ms) 31