TM341M-L

TO-220 3A Triac TM341M-L, TM361M-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=3A qGate trigger Current: IGT=20mA max (MODE , , External Dimensions (Unit: mm) 16.7max 0.2 3.0±0.2 8.8± 10.4max 5.0max 2.1max ) φ 3.75±0.1 a b ± 1.35 0.15 12.0 min 4.0 max +0.2 0.65 – 0.1 ± 2.5 0.1 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) ± 2.5 0.1 ±0.2 1.7 a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.6g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg Ratings TM341M-L 400 3.0 30 6 0.5 3 0.3 – 40 to +125 – 40 to +125 TM361M-L 600 Unit V A A V A W W °C °C Conditions Conduction angle 360°, Tc=115°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C sElectrical Characteristics Parameter Off-state current On-state voltage (Tj=25°C, unless otherwise specified) Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.6 0.7 2.0 2.0 2.0 20 20 20 0.7 0.8 0.8 8 10 12 15 0.2 10 3.0 Unit mA V Conditions VD=VDRM, RGK= ∞, Tj=125°C VD=VDRM, RGK= ∞, Tj=25°C Pulse test, ITM=5A T2 , G V VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth 28 TM341M-L, TM361M-L vT – iT Characteristics (max) 100 50 ITSM Ratings 40 Gate Characteristics Gate trigger voltage VGT ( V) Surge on-state current ITSM (A) Initial junction temperature Tj=125°C ITSM 12 4 10 Tj=25°C vGF ( V) 8 6 4 On-state current Gate voltage 10 5 Tj=125°C 0 0 20 Tj=25°C 30 2 Tj= –20°C 40 iT (A) 20 50Hz Gate trigger current IGT (mA) 10 1 0.5 1.0 2 0 0 1 5 10 50 100 0 See graph at the upper right 2.0 3.0 3.5 0.5 1.0 Tj= –40°C 60 10 ms 1cycle 1.5 On-state voltage vT ( V ) Number of cycle Gate current iGF (A) IT(RMS) – PT(AV) Characteristics 5 IH temperature Characteristics IT(RMS) – Tc Ratings 150 IT(RMS) – Ta Ratings 150 Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind (Typical) 10 (VD =30V, IP=3.0A, RGK= ∞) Average on-state power PT(AV) (W) Full-cycle sinewave Conduction angle θ = θ1+ θ2 =360° Case temperature TC (°C) 4 θ1 100 100 75 Holding current IH (mA) θ2 Ambient temperature Ta (°C) 125 125 3 (T2 – T1 ) 5 ( T2 – T1 ) – + + – 75 2 50 1 Full-cycle sinewave Conduction angle θ = θ1+ θ2 = 360° θ2 θ1 50 25 0 25 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 0 – 40 0 25 50 75 100 125 RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) Junction temperature Tj (°C) Pulse trigger temperature Characteristics (MODE – ) 30 vgt ( Typical) (MODE – ) (MODE – ) trigger VGT DC gateat 25°C voltage ) ) trigger VGT DC gateat 25°C voltage trigger VGT DC gateat 25°C voltage vgt 50% vgt 50% ) 30 30 vgt 50% 10 tw Tj= – 40°C –20°C 25°C 75°C 125°C 10 Tj= – 40°C –20°C 25°C 75°C 125°C tw 10 Tj= – 40°C –20°C 25°C 75°C 125°C tw ( ( ) trigger vgt ( Gateand tw voltage) at Tj 1 trigger vgt ( Gateand tw voltage) at Tj gt Gate trigger voltage at Tj and tw ( 1 1 v ( 0.1 0.5 1 10 102 103 104 0.1 0.5 1 10 102 103 104 0.1 0.5 1 10 102 103 104 Pulse width tw ( µs) Pulse width tw ( µs) Pulse width tw ( µs) Pulse trigger temperature Characteristics (MODE – ) 30 trigger IGT DC gateat 25°C current igt (Typical) (MODE – ) 30 trigger IGT DC gateat 25°C current trigger IGT DC gateat 25°C current (MODE – ) 30 igt 50% igt 50% 10 ( ( ) trigger igt (Gateand tw current ) at Tj trigger igt (Gateand tw current ) at Tj gt Gate trigger current at Tj and tw ( Tj= – 40°C –20°C 25°C 75°C 125°C tw 10 Tj= – 40°C –20°C 25°C 75°C 125°C tw 10 Tj= – 40°C –20°C 25°C 75°C 125°C igt 50% ) ) ) tw 1 1 1 ( 0.1 0.5 1 10 102 103 104 0.1 0.5 1 10 102 103 104 0.1 0.5 1 i 10 102 103 104 Pulse width t w ( µs) Pulse width t w ( µs) Pulse width t w ( µs) VGT temperature characteristics ( Typical) 1.2 1.0 MODE MODE MODE (T2–,G– ) (T2+,G+ ) (T2+,G– ) (VD=6V, RL=10Ω) IGT temperature characteristics ( Typical) 24 (VD=6V, RL=10Ω) Transient thermal resistance Characteristics 100 rth (°C/W) Gate trigger voltage VGT (V) Gate trigger current IGT (mA) 20 MODE MODE MODE 10 (T2–,G– ) (T2+,G– ) (T2+,G+ ) junction to operating environment Transient thermal resistance 0.8 0.6 0.4 0.2 0 –40 10 Junction to case 1 0 25 50 75 100 125 0 – 40 0 25 50 75 100 125 0.1 0.1 1 10 10 2 10 3 10 4 10 5 Junction temperature Tj (°C) Junction temperature Tj (°C) t, Time (ms) 29