TM561S-L

TO-220F 5A Triac TM541S-L, TM561S-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=5A qGate trigger current: IGT=20mA max (MODE , , qUL approved type available External Dimensions (Unit: mm) φ 3.3±0.2 16.9±0.3 0.2 8.4± 4.0±0.2 10.0±0.2 4.2± 2.8 0.2 C 0.5 0.8±0.2 ) qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min a b 1.35± 0.15 0.2 1.35±0.15 +0.2 0.85 – 0.1 +0.2 0.45 – 0.1 2.4± 3.9± 2.54 0.2 2.2± 2.54 0.2 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO Ratings TM541S-L 400 5.0 50 10 2 5 0.5 – 40 to +125 – 40 to +125 1500 TM561S-L 600 Unit V A A V A W W °C °C Vrms Conditions Conduction angle 360°, Tc=104°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current On-state voltage (Tj=25°C, unless otherwise specified) Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.6 0.7 2.0 2.0 2.0 20 20 20 0.7 0.8 0.8 7 8 10 15 0.2 5 4.0 Unit mA V Conditions VD=VDRM, RGK= ∞, Tj=125°C VD=VDRM, RGK= ∞, Tj=25°C Pulse test, ITM=7A T2 , G V VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth 34 TM541S-L, TM561S-L vT – iT Characteristics (max) 100 50 IT(RMS) – PT(AV) Characteristics 7 IT(RMS) – Tc Ratings 150 Average on-state power PT(AV) (W) Full-cycle sinewave Conduction angle : 360° 6 5 4 3 2 1 0 125 Case temperature TC (°C) iT (A) 10 5 Tj=125°C 100 75 On-state current Tj=25°C 1 0.5 50 25 0 Full-cycle sinewave Conduction angle : 360° 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 0 1 2 3 4 5 6 On-state voltage vT ( V ) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) IT(RMS) – Ta Ratings 140 120 Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind VGT temperature characteristics ( Typical) 1.2 1.0 MODE MODE MODE (VD=6V, RL=10Ω) IGT temperature characteristics ( Typical) 100 50 (VD=6V, RL=10Ω) Ambient temperature Ta (°C) Gate trigger voltage VGT (V) Gate trigger current IGT (mA) 100 80 60 40 20 0 0.8 0.6 0.4 0.2 0 –40 MODE MODE MODE 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 1 – 40 0 25 50 75 100 125 RMS on-state current IT(RMS) (A) Junction temperature Tj (°C) Junction temperature Tj (°C) Transient thermal resistance Characteristics 100 rth (°C/W) Junction to operating environment 10 Transient thermal resistance Junction to case 1 0.1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 35