TM841M-L

TO-220 8A Triac TM841M-L, TM861M-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=8A qGate trigger Current: IGT=30mA max (MODE , , External Dimensions (Unit: mm) 16.7max 0.2 3.0± 8.8±0.2 10.4max 5.0max 2.1max ) φ 3.75±0.1 a b ±0.15 1.35 12.0 min 4.0 max +0.2 0.65 – 0.1 ±0.1 2.5 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) ±0.1 2.5 ±0.2 1.7 a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.6g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg Ratings TM841M-L 400 8.0 80 10 2 5 0.5 – 40 to +125 – 40 to +125 TM861M-L 600 Unit V A A V A W W °C °C Conditions Conduction angle 360°, Tc=108°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C sElectrical Characteristics Parameter Off-state current On-state voltage (Tj=25°C, unless otherwise specified) Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.6 0.8 2.0 2.0 2.0 30 30 30 0.7 0.8 0.9 8 10 12 30 0.2 12 1.8 Unit mA V Conditions VD=VDRM, RGK= ∞, Tj=125°C VD=VDRM, RGK= ∞, Tj=25°C Pulse test, ITM=10A T2 , G V VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case 36 TM841M-L, TM861M-L vT – iT Characteristics (max) 100 50 Tj=25°C ITSM Ratings 100 Gate Characteristics Tj= –20°C Tj= –40°C Surge on-state current ITSM (A) iT (A) Tj=125°C 80 vGF ( V) 10 ms 1cycle 1 0 0 8 On-state current 10 5 60 20 40 60 80 Gate voltage 50Hz Gate trigger current IGT (mA) 6 4 40 1 0.5 0.3 1.0 20 2 0 1 5 10 50 100 0 See graph at the upper right 0 2.0 3.0 3.6 1 2 Tj=25°C Initial junction temperature Tj=125°C ITSM Gate trigger voltage VGT ( V) 12 10 3 2 PG M W =5 3 On-state voltage vT ( V ) Number of cycle Gate current iGF (A) IT(RMS) – PT(AV) Characteristics 12 IT(RMS) – Tc Ratings 150 IT(RMS) – Ta Ratings 150 Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind IH temperature Characteristics (Typical) 20 (VD =30V) Average on-state power PT(AV) (W) Full-cycle sinewave Conduction angle :360° Ambient temperature Ta (°C) 10 125 125 100 Case temperature TC (°C) 8 100 6 75 75 Holding current IH (mA) 10 (T2 – T1 ) – + + – 4 2 0 50 50 25 0 ( T2 – T1 ) 25 0 Full-cycle sinewave Conduction angle :360° 0 2 4 6 8 10 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0 –40 0 25 50 75 100 125 RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) Junction temperature Tj (°C) Pulse trigger temperature Characteristics (MODE – ) 30 vgt ( Typical) (MODE – ) 30 30 (MODE – ) ) ) ) trigger VGT DC gateat 25°C voltage trigger VGT DC gateat 25°C voltage 50% 50% trigger VGT DC gateat 25°C voltage vgt 10 vgt 10 vgt 50% tw Tj= – 40°C – 20°C 25°C 75°C 125°C tw Tj= – 40°C – 20°C 25°C 75°C 125°C 10 Tj= – 40°C – 20°C 25°C 75°C 125°C tw ( ( trigger vgt ( Gateand tw voltage) at Tj trigger vgt ( Gateand tw voltage) at Tj 1 trigger vgt ( Gateand tw voltage) at Tj ( 1 1 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 103 10 4 Pulse width tw ( µs) Pulse width tw ( µs) Pulse width tw ( µs) Pulse trigger temperature Characteristics (MODE – ) 30 trigger IGT DC gateat 25°C current igt (Typical) (MODE – ) 30 trigger IGT DC gateat 25°C current (MODE – ) 30 50% 10 Tj= – 40°C – 20°C 25°C 75°C 125°C tw 10 Tj= – 40°C – 20°C 25°C 75°C 125°C tw 50% trigger IGT DC gateat 25°C current igt ) ) ) igt igt 10 Tj= – 40°C – 20°C 25°C 75°C 125°C 50% tw ( ( trigger igt (Gateand tw current ) at Tj trigger igt (Gateand tw current ) at Tj 1 1 trigger igt (Gateand tw current ) at Tj ( 103 10 4 1 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 0.1 0.5 1 10 10 2 103 10 4 Pulse width t w ( µs) Pulse width t w ( µs) Pulse width t w ( µs) VGT temperature characteristics ( Typical) 1.2 1.0 MODE MODE MODE (VD=6V, RL=10Ω) IGT temperature characteristics ( Typical) 24 (VD=6V, RL=10Ω) Transient thermal resistance Characteristics 100 rth (°C/W) Gate trigger voltage VGT (V) Gate trigger current IGT (mA) (T2–,G– ) (T2+,G+ ) (T2+,G– ) 20 MODE MODE MODE 10 (T2–, G– ) (T2+, G– ) (T2+, G+ ) Junction to operating environment 10 0.8 0.6 0.4 0.2 0 –40 Transient thermal resistance 1 Junction to case 0 25 50 75 100 125 0 –40 0 25 50 75 100 125 0.1 0.1 1 10 10 2 10 3 10 4 10 5 Junction temperature Tj (°C) Junction temperature Tj (°C) t, Time (ms) 37