TM861

TO-220F 8A Triac TM841S-L, TM861S-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=8A qGate trigger current: IGT=30mA max (MODE , , qUL approved type available External Dimensions (Unit: mm) φ 3.3±0.2 16.9±0.3 8.4±0.2 4.0±0.2 10.0± 0.2 4.2± 2.8 0.2 C 0.5 3.9±0.2 0.8±0.2 ) qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min a b 1.35± 0.15 1.35±0.15 +0.2 0.85 – 0.1 +0.2 0.45 – 0.1 2.4± 2.54 2.2±0.2 2.54 0.2 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO Ratings TM841S-L 400 8.0 80 10 2 5 0.5 – 40 to +125 – 40 to +125 1500 TM861S-L 600 Unit V A A V A W W °C °C Vrms Conditions Conduction angle 360°, Tc=90°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current On-state voltage (Tj=25°C, unless otherwise specified) Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.6 0.8 2.0 2.0 2.0 30 30 30 0.7 0.8 0.9 8 10 12 30 0.2 12 3.6 Unit mA V Conditions VD=VDRM, RGK=∞, Tj=125°C VD=VDRM, RGK=∞, Tj=25°C Pulse test, ITM=10A T2 , G V VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G + + – – – – + + + – Gate trigger voltage VGT – + + – T2 , G mA VD=6V, RL=10Ω, TC=25°C T2 , G T2 , G T2 , G V mA °C/W Gate trigger current IGT – + Gate non-trigger voltage Holding current Thermal resistance VGD IH Rth VD=1/2 × VDRM, Tj=125°C VD=6V Junction to case 38 TM841S-L, TM861S-L vT – iT Characteristics (max) 100 50 ITSM Ratings 100 Gate Characteristics Tj= –20°C Tj= –40°C Surge on-state current ITSM (A) 80 iT (A) vGF ( V) 10 ms 1cycle 1 0 0 10 5 Tj=125°C Tj=25°C 8 6 4 On-state current 60 20 40 60 80 100 50Hz Gate voltage Gate trigger current IGT (mA) 40 1 0.5 20 2 0 See graph at the upper right 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 0 1 2 Tj=25°C Initial junction temperature Tj=125°C ITSM Gate trigger voltage VGT ( V) 12 10 3 2 PG M W =5 3 On-state voltage vT ( V ) Number of cycle Gate current iGF (A) IT(RMS) – PT(AV) Characteristics 12 IT(RMS) – Tc Ratings 150 Full-cycle sinewave Conduction angle :360° IT(RMS) – Ta Ratings 150 Full-cycle sinewave Conduction angle : 360° Self-supporting Natural cooling No wind IH temperature Characteristics (Typical) 10 (VD =30V) Average on-state power PT(AV) (W) Full-cycle sinewave Conduction angle :360° Ambient temperature Ta (°C) 10 125 125 Case temperature TC (°C) 8 100 75 100 75 Holding current IH (mA) 8 6 (T2 – T1 ) + – 6 4 ( T2 – T1 ) – + 4 2 0 50 25 0 50 25 0 2 0 2 4 6 8 10 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0 –40 0 25 50 75 100 125 RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) RMS on-state current IT(RMS) (A) Junction temperature Tj (°C) Pulse trigger temperature Characteristics (MODE – ) 30 trigger VGT DC gateat 25°C voltage vgt ( Typical) (MODE – ) 30 trigger VGT DC gateat 25°C voltage trigger VGT DC gateat 25°C voltage (MODE – ) 30 vgt 50% vgt 10 5 vgt 50% ) ) 10 5 tw Tj= – 40°C – 20°C 25°C 75°C 125°C tw Tj= – 40°C – 20°C 25°C 75°C 125°C 50% ) 10 5 tw Tj= – 40°C – 20°C 25°C 75°C 125°C ( ( ) trigger vgt ( Gateand tw voltage) at Tj trigger vgt ( Gateand tw voltage) at Tj gt Gate trigger voltage at Tj and tw ( 1 0.5 1 0.5 1 0.5 v ( 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 103 10 4 Pulse width tw ( µs) Pulse width tw ( µs) Pulse width tw ( µs) Pulse trigger temperature Characteristics (MODE – ) 30 trigger IGT DC gateat 25°C current igt (Typical) (MODE – ) 30 trigger IGT DC gateat 25°C current (MODE – ) 30 50% 50% trigger IGT DC gateat 25°C current igt 10 5 Tj= – 40°C – 20°C 25°C 75°C 125°C ) ) igt 10 5 Tj= – 40°C – 20°C 25°C 75°C 125°C ) igt 10 5 Tj= – 40°C – 20°C 25°C 75°C 125°C 50% tw tw tw ( ( ) trigger igt (Gateand tw current ) at Tj 1 0.5 trigger igt (Gateand tw current ) at Tj gt Gate trigger current at Tj and tw ( 103 10 4 1 0.5 1 0.5 i ( 0.1 0.5 1 10 10 2 103 10 4 0.1 0.5 1 10 10 2 0.1 0.5 1 10 10 2 103 10 4 Pulse width t w ( µs) Pulse width t w ( µs) Pulse width t w ( µs) VGT temperature characteristics ( Typical) 1.2 1.0 MODE MODE MODE (VD=6V, RL=10Ω) IGT temperature characteristics ( Typical) 50 (VD=6V, RL=10Ω) Transient thermal resistance Characteristics 100 Gate trigger voltage VGT (V) Gate trigger current IGT (mA) (T2–,G– ) (T2+,G+ ) (T2+,G– ) rth (°C/W) 40 Junction to operating environment 10 0.8 0.6 30 MODE MODE MODE (T2 , G ) (T2+, G– ) (T2+, G+ ) – – Transient thermal resistance 20 Junction to case 1 0.4 0.2 0 –40 10 0 25 50 75 100 125 0 – 40 0 25 50 75 100 125 0.1 0.1 1 10 10 2 10 3 10 4 10 5 Junction temperature Tj (°C) Junction temperature Tj (°C) t, Time (ms) 39