TMA166H-L

TMA166H-L Triac (Bidirectional Triode Thyristor) Features and Benefits Description ▪ Exceptional reliability ▪ Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life ▪ VDRM of 600 V ▪ 16 ARMS on-state current ▪ Uniform switching ▪ UL Recognized Component This Sanken triac (bidirectional triode thyristor) is designed for AC power control, providing reliable, uniform switching for full-cycle AC applications. Package: 3-pin SIP (TO-220F) Applications In comparison with other products on the market, the TMA166H-L provides increased isolation voltage (1800 VAC RMS), guaranteed for up to 1 minute, and greater peak nonrepetitive off-state voltage, VDSM (700 V). In addition, commutation dv/dt and (dv/dt)c are improved. ▪ Residential and commercial appliances: vacuum cleaners, rice cookers, TVs, home entertainment ▪ White goods: washing machines ▪ Office automation power control, photocopiers ▪ Motor control for small tools ▪ Temperature control, light dimmers, electric blankets ▪ General use switching mode power supplies (SMPS) Not to scale Typical Applications Halogen Lamp Gate Controller Heater control (for example, LBP. PPC, MFP) 28105.26 Two-phase motor control (for example, washing machine) In-rush current control (for example, SMPS) TMA166H-L Triac (Bidirectional Triode Thyristor) Selection Guide Part Number TMA166H-L Package Packing 3-pin fully molded SIP with heatsink mount 50 pieces per tube Absolute Maximum Ratings Characteristic Symbol Notes Rating Units 600 V Peak Repetitive Off-State Voltage VDRM RGREF = ∞ Peak Non-Repetitive Off-State Voltage VDSM RGREF = ∞ 700 V Isolation Voltage VISO AC RMS applied for 1 minute between lead and case 1800 V 50/60 Hz full cycle sine wave, total Conduction angle (α+) + (α–) = 360°, TC = 65°C 16 A f = 60 Hz 168 A RMS On-State Current IT(RMS) Surge On-State Current ITSM I2t I2t Value for Fusing Full cycle sine wave, peak value, non-repetitive, initial TJ = 25°C f = 50 Hz A Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 160 A 128 A2 • s 25 A/μs 2 A Critical Rising Rate of On-State Current di/dt IT = IT(RMS) × √2, VD = VDRM × 0.5, f ≤ 60 Hz, tgw ≥ 10 μs, tgr ≤ 250 ns, Igp ≥ 60 mA (refer to Gate Trigger Current diagram) Peak Gate Current IGM f ≥ 50 Hz, duty cycle ≤ 10% PGM f ≥ 50 Hz, duty cycle ≤ 10% Peak Gate Power Dissipation 160 5 W PGM(AV) 0.5 W Junction Temperature TJ –40 to 125 ºC Storage Temperature Tstg –40 to 125 ºC Average Gate Power Dissipation Thermal Characteristics May require derating at maximum conditions Characteristic Symbol Package Thermal Resistance (Junction to Case) RθJC Test Conditions For AC Value Units 3.3 ºC/W Pin-out Diagram T2 Terminal List Table G T1 1 2 3 Number Name 1 T1 Main terminal, gate referenced Function 2 T2 Main terminal connect to signal side 3 G Gate control All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature, TA, of 25°C, unless otherwise stated. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 TMA166H-L Triac (Bidirectional Triode Thyristor) ELECTRICAL CHARACTERISTICS Characteristics Symbol Off-State Leakage Current IDRM On-State Voltage VTM Test Conditions Min. Typ. Max. Unit VD = VDRM, TJ = 125°C, RGREF = ∞ using test circuit 1 – – 2.0 mA VD = VDRM, TJ = 25°C, RGREF = ∞ using test circuit 1 – – 100 μA IT = 20 A, TJ = 25°C – – 1.45 V – – 1.5 V V Quadrant I: T2+, G+ Gate Trigger Voltage VGT Gate Trigger Current Quadrant II: T2+, G– IGT VD = 12 V, RL = 20 Ω, TJ = 25°C – – 1.5 Quadrant III: T2–, G– – – 1.5 V Quadrant I: T2+, G+ – – 30 mA – – 30 mA – – 30 mA VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C 0.2 – – V VD = 400 V, (di/dt)c = –8 A/ms, ITP = 2 A, TJ = 125°C 10 – – V/μs VD = VDRM × 0.66, RGREF = ∞ using test circuit 1, TJ = 125°C 200 – – V/μs Quadrant II: T2+, G– VD = 12 V, RL = 20 Ω, TJ = 25°C Quadrant III: T2–, G– Gate Non-trigger Voltage VGD Critical Rising Rate of Off-State Voltage during Commutation* (dv/dt)c Critical Rising Rate of Off-StateVoltage dv/dt *Where ITP is the peak current through T2 to T1. Test Circuit 1 Gate Trigger Characteristics +T2 Quadrant II Quadrant I T2 [ + ] T2 RGREF = ∞ T2 [ + ] G[–] G G[+] T1 [ – ] T1 –IGT T1 [ – ] T2 [ – ] T2 [ – ] G[–] G[+] T1 [ + ] Gate Trigger Current Quadrant III +IGT T1 [ + ] –T2 Quadrant IV Polarities referenced to T1 tgr igp tgw Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 3 TMA166H-L Triac (Bidirectional Triode Thyristor) Commutation Timing Diagrams Q4 Supply VAC Q A A = Conduction angle VGT VGATE Q ITSM On-State Currrent Q Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 4 TMA166H-L Triac (Bidirectional Triode Thyristor) Performance Characteristics at TA = 25°C 180 100 f = 50 Hz full cycle sine wave total Conduction angle (A+) + (A–) = 360° initial TJ = 125°C 160 TJ = 125°C 140 120 Surge On-State Current versus Quantity of Cycles ITSM (A) Maximum On-State Current versus Maximum On-State Voltage IT (max) (A) 10 100 80 TJ = 25°C 1 60 40 20 0.1 0.6 1.4 1.0 1.8 2.2 VT (max) (V) 25 2.6 0 3.0 10 Quantity of Cycles 100 150 full cycle sine wave total Conduction angle (A+) + (A–) = 360° 20 1 full cycle sine wave total Conduction angle (A+) + (A–) = 360° 125 15 Case Temperature versus On-State RMS Current TC (°C) PT(AV) (W) 100 On-State Average Power Dissipation versus Maximum On-State RMS Current 75 65°C 10 50 5 0 25 0 5 10 15 IT(RMS)(max) (A) 0 20 0 5 10 IT(RMS) (A) 15 20 2.0 100 Gate Voltage versus Gate Current VG (V) 10 VGM = 10 V PGM =5W VGT (–40°C) =2V VGT (25°C) = 1.5 V 1 IGT (–40°C) = 100 mA IGT (25°C) = 30 mA Proportional Change of Typical Trigger Voltage versus Junction Temperature PG(AV) = 0.5 W VGT (TJ) (V) / VGT (TJ = 25°C ) (V) 1.8 IGM = 2 A 100 IG (mA) 1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VGD = 0.2 V 0.1 10 1.6 0 –60 –40 –20 10 000 0 20 40 60 80 100 120 140 TJ (°C) 10 10 Quadrant III (T2–, G–) 1 Proportional Change of Typical Holding Current versus Junction Temperature Quadrant I (T2+, G+) Quadrant II (T2+, G–) 0.1 –60 –40 –20 0 20 40 60 80 100 120 140 TJ (°C) IH (TJ) (A) / IH (TJ = 25°C ) (A) Proportional Change of Typical Trigger Current versus Junction Temperature IGT (TJ) (A) / IGT (TJ = 25°C ) (A) RGREF = 1 kΩ 1 0.1 –60 –40 –20 0 20 40 60 80 100 120 140 TJ (°C) Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 5 TMA166H-L Triac (Bidirectional Triode Thyristor) Transient Thermal Impedence versus Triac Voltage Pulse Duration For AC ZQJC (°C/W) 10 1 0.1 0.001 0.01 0.1 1 10 100 QT (s) Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 6 TMA166H-L Triac (Bidirectional Triode Thyristor) 3.3 ±0.2 TO-220F Package Outline Drawing 10.16 ±0.3 6.68 ±0.2 2.54 ±0.2 Branding Area 15.8 ±0.2 XXXXXXXX XXXXX 7.92 ±0.2 15.87 ±0.3 Ø3.2 ±0.2 XXXXX 2.76 ±0.2 +0.15 0.5 –0.1 9.75 ±0.5 0.8 ±0.15 View A 2.54 ±0.2 Terminal dimension at case surface 4.7 ±0.2 1 2 3 0.5 MAX View A Terminal core material: Cu Terminal treatment: Sn plating Package: TO-220F Dimensions in millimeters Branding codes (exact appearance at manufacturer discretion): 1st line, type: MA166H 2nd line left, lot: YMDDR Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) DD is the date R is a tracking letter Leadframe plating Pb-free. Device meets RoHS requirements. Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 7 TMA166H-L Triac (Bidirectional Triode Thyristor) Packing Specification Tube Packing 533 7 33 50 pieces per tube 20 tubes per layer 1 layer per inner carton 1000 pieces per inner carton 590 4 inner cartons per outer carton 4000 pieces per outer carton Dimensions in millimeters 570 130 330 55 155 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 8 TMA166H-L Triac (Bidirectional Triode Thyristor) WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. The use of an isolation transformer is recommended during circuit development and breadboarding. Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage • Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (approximately 40% to 75%); avoid storage locations that experience extreme changes in temperature or humidity. • Avoid locations where dust or harmful gases are present and avoid direct sunlight. • Reinspect for rust on leads and solderability of products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. Remarks About Using Silicone Grease with a Heatsink • When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress. • Coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink. • Volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reduced heat radiation effect, and possibly shortening the lifetime of the product. • Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 Momentive Performance Materials SC102 Dow Corning Toray Silicone Co., Ltd. Heatsink Mounting Method • Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. To avoid these problems, observe the recommended tightening torques for this product package type 0.490 to 0.686 N•m (5 to 7 kgf•cm). • For effective heat transfer, the contact area between the product and the heatsink should be free from burrs and metal fragments, and the heatsink should be flat and large enough to contact over the entire side of the product, including mounting flange and exposed thermal pad. • The mounting hole in customer-supplied heatsink must be less than Ø4 mm; this includes the diameter of any dimple around punched holes. This is to prevent possible deflection and cracking of the product case when fastened to the heatsink. Soldering • When soldering the products, please be sure to minimize the working time, within the following limits: 260°C 10 s 350°C 3 s • Soldering iron should be at a distance of at least 1.5 mm from the body of the products M3 Screw Device Heatsink Flat Washer Typical Mounting Configuration Split Washer M3 Nut Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 9 TMA166H-L Triac (Bidirectional Triode Thyristor) The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use. Anti radioactive ray design is not considered for the products listed herein. The contents in this document must not be transcribed or copied without Sanken’s written consent. Copyright © 2009 Allegro MicroSystems, Inc. This datasheet is based on Sanken datasheet SSE-24298 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 10 TMA166H-L Triac (Bidirectional Triode Thyristor) Worldwide Contacts Asia-Pacific China Sanken Electric Hong Kong Co., Ltd. Suite 1026, Ocean Centre Canton Road, Tsimshatsui Kowloon, Hong Kong Tel: 852-2735-5262, Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room 3202, Maxdo Centre Xingyi Road 8, Changning District Shanghai, China Tel: 86-21-5208-1177, Fax: 86-21-5208-1757 Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor 88 Jung Shiau East Road, Sec. 2 Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161, Fax: 886-2-2356-8261 Japan Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building 1-11-1 Nishi-Ikebukuro, Toshima-ku Tokyo 171-0021, Japan Tel: 81-3-3986-6164, Fax: 81-3-3986-8637 Singapore Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West Singapore 189720 Tel: 65-6291-4755, Fax: 65-6297-1744 Europe Sanken Power Systems (UK) Limited Pencoed Technology Park Pencoed, Bridgend CF35 5HY, United Kingdom Tel: 44-1656-869-100, Fax: 44-1656-869-162 North America United States Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000, Fax: 1-508-853-7895 Allegro MicroSystems, Inc. 14 Hughes Street, Suite B105 Irvine, California 92618, U.S.A. Tel: 1-949-460-2003, Fax: 1-949-460-7837 Korea Sanken Electric Korea Co., Ltd. Samsung Life Yeouido Building 16F 23-10, Yeouido-Dong, Yeongdeungpo-gu Seoul 150-734, Korea Tel: 82-2-714-3700, Fax: 82-2-3272-2145 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 11