FSD20A30

THYRISTOR MODULE（SINGLE PHASE BRIDGE TYPE） FSD20A30/60 UL:E76102 M） （ FSD20A is a single phase bridge module consist of thyristors and diodes ● ID=20A, ● Easy 5.2 VRRM=600V Construction ● Highly reliable glass passivated chips （Applications） Rectification (Bridge) Motor Drive 22.1±0.5 14.6±0.3 33.0 62.0 48.0 26.1±0.5 φ5.2×6.2 AC1 AC2 G1 − ＋ G2 250TAB （t＝0.8） AC1 AC2 11.6 2.6 G1 G2 22.5max + - Unit：A ■Maximum Ratings Symbol VRRM VDRM Symbol IT(AV) ITSM I2t PGM （ PG AV） （Tj＝25℃ unless otherwise specified） Item Ratings FSD20A30 300 300 Conditions Single phase, half wave, 180° conduction, Tc：65℃ 1 cycle, ／ 2 FSD20A60 600 600 Ratings 20 180/200 165 10 1 3 10 5 Unit V V Unit A A A2S W W A V V A/ s μ V ℃ ℃ N･ｍ （㎏f･B） g Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item Average On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of On-State Current Isolation Breakdown Voltage (R.M.S.) Operating Junction Temperature Storage Temperature Mounting Torque（M5） Mass 50Hz/60Hz, peak value, non-repetitive IFGM VFGM VRGM di／dt VISO Tj Tstg IG＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝1A/ s Tj V／ dI μ A.C.1minute 100 2500 −30 to ＋125 −30 to ＋125 Recommended Value 1.5-2.5（15-25） 2.7（28） 66 ■Electrical Characteristics Symbol IDRM IRRM VTM IGT／VGT VGD tgt dv／dt IH Item Repetitive Peak Off-State Current, max. Repetitive Peak Reverse Current, max. Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Conditions at VDRM, single phase, half wave, Tj＝125℃ at VDRM, single phase, half wave, Tj＝125℃ On-State Current 30A, Tj＝25℃ Inst. measurement Tj＝25℃，IT＝1A，VD＝6V Tj＝125℃，VD＝1 2VDRM ／ IT＝10A，G＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝1A/ s I Tj V／ dI μ Tj＝125℃, Tj＝25℃ Junction to case VD＝2 3VDRM, ／ Exponential wave. Ratings 5 5 1.5 40/1.2 0.2 10 50 30 1.0 Unit mA mA V mA/V V μs V/ s μ mA ℃/W Rth j-c） Thermal Impedance, max. （ SanRex ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com ２ ０ Allowable Case Temperature （℃） Total Power Dissipation （W） ; ２ FSD20A30/60 Gate Characteristics On-State Voltage max Tj＝125℃ １１ ０ Peak Forward Gate Voltag （10V） Average On-State Current （A） ５ 00 Gate Voltage （V） er ag e ２ Ga t Peak Gate Current （3A） ５ Av Pe a Po k G we at r(1 e 0W ) ２０ ０ １０ ０ ５ 0 e １０ ０ Po we （ r 1W ） ５ ２ − １ 25℃ Tj＝125℃ −30℃ ２ ０ １ ０ Maximum Gate Voltage that will not trigger any unit １１ ０ １ ０ ２ ５ １２ ０ ２ ５ １３ ０ ２ ５ ５ ０ １０ ． ２０ ． ３０ ． ４０ ． ５０ ． Gate Current （mA） On-State Voltage （V） Output Current Current Vs Total Power Dissipation Output Current Vs Maximum Allowable Case Temperature（Single phase full bridge） ０ π θ θ ３０ ６゜ 2π Allowable Case Temperature （℃） Total Power Dissipation （W） 7 ０ １０ ３ １０ ２ １０ １ １０ ０ ９ ０ ８ ０ ７ ０ ６ ０ θ ＝180゜ ５ ０ θ ＝120゜ ４ ０ θ ＝60゜ θ ＝90゜ θ ：Conduction Angle θ ＝30゜ ３ ０ ２ ０ １ ０ ０ π 2π θ θ ３０ ６゜ θ ：Conduction Angle ０ ０ １ ０ ２ ０ ６ ０ ０ θ ＝30゜ θ θ θ ＝60゜ ＝90゜ ＝120゜ θ ＝180゜ １ ０ ２ ０ ３ ０ Output Current （A） Output Current （A） ２０ ５ Surge On-State Current Rating （Non-Repetitive） Per one element Tj＝25℃ ８ ０ 7 ０ Ambient Temperature Vs Total Power Dissipation ２０ ０ Total Power Dissipation （W） Surge On-State Current （A） ６ ０ ５ ０ ４ ０ Rth 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 １０ ５ １０ ０ ５ ０ 60Hz 50Hz ３ ０ ２ ０ １ ０ ０ １ ２ ５ １ ０ ２ ０ ５ ０ １０ ０ ０ ０ ４ ０ ５ ０ ６ ０ ７ ０ ８ ０ ９ １０ １０ １０ １０ ００ １ ２ ３ Time （cycles） Ambient Temperature （℃） Free Wheeling Diode Average On-State Current Vs Power Dissipation （Pulse Waving form） １０ ３ １０ ２ Free Wheeling Diode Averge On-State Current Vs Maximum Allowable Case Temperature Pulse Waving form） （ １ ５ θ ＝180゜ １０ １ θ ３０ ６゜ θ ＝120゜ θ ＝90゜ １０ ０ ９ ０ ８ ０ ７ ０ ６ ０ θ ：Conduction Angle １ ０ θ ＝60゜ θ ＝30゜ ５ θ ３０ ６゜ θ ：Conduction Angle ＝60゜ ＝90゜ ＝120゜ ＝180゜ θ ＝30゜ θ θ θ θ ０ ０ ５ 10 1５ ０ ０ ５ １ ０ １ ５ Average Forward Current （A） Average Forward Current （A）