KD100GB80

DIODE MODULE DD(KD)100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V is avaiable for various input voltage. Isolated mounting base Two elements in a package for simple (single and three phase) bridge connections Highly reliable glass passivated chips High surge current capability Applications Various rectifiers, Battery chargers, DC motor drives Unit a Maximum Ratings Symbol VRRM VRSM Symbol IF AV Tj 25 Item Ratings DD100GB40 400 480 Conditions Single phase, half wave, 180 conduction, Tc 115 Single phase, half wave, 180 conduction, Tc 115 2 cycle, 50/60HZ, peak value, non-repetitive Value for one cycle of surge current 1 DD100GB80 800 960 Ratings 100 155 1800/2000 16500 40 150 40 125 2500 4.7 48) 2.7 28) 170 Unit V V Unit A A A A2S Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Item Average Forward Current R.M.S. Forward Current Surge Forward Current I2t Junction Temperature Storage Temperature Isolation Breakdown Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C.1minute IF (RMS) IFSM I2t Tj Tstg VISO V Nm fB g Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25 Electrical Characteristics Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. Conditions at VDRM, single phase, half wave. Tj 150 Foward current 320A Tj 25 Junction to case Inst. measurement Ratings 30 1.25 0.30 Unit mA V /W 75 DD(KD)100GB40/80 76