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KK25F

KK25F

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    KK25F - THYRISTOR MODULE - SanRex Corporation

  • 数据手册
  • 价格&库存
KK25F 数据手册
THYRISTOR MODULE PK(PD,PE,KK)25F UL:E76102 M) ( Power Thyristor/Diode Module PK25F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package and electrically isolated mounting base make your mechanical design easy. ● IT(AV) 25A, IT(RMS) 39A, ITSM 580A ● di/dt ● dv/dt 25 12.5 12 K1 G1 K2 G2 100 A/μs 500V/μs K2 G2 3 2 M5X10 K2 G2 3 2 1 2.8 #110TAB (Applications) Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches A1K2 (K2) K1 (A2) G1 1 PK K2 3 2 2 PE K2 G2 K1 (A2) G1 1 31max 19.5 80±0.2 A1K2 (K2) K1 (A2) G1 1 1 (A1) PD KK ■Maximum Ratings Ratings Symbol Item PK25F40 PD25F40 PE25F40 KK25F40 400 480 400 PK25F80 PD25F80 PE25F80 KK25F80 800 960 800 PK25F120 PD25F120 PE25F120 KK25F120 1200 1300 1200 PK25F160 PD25F160 PE25F160 KK25F160 1600 1700 1600 Ratings 25 39 530/580 1400 10 1 3 10 5 100 2500 −40 to +125 −40 to +125 2.7(28) 2.7(28) 170 Unit VRRM VRSM VDRM Symbol ( IT AV) ( IT RMS) ITSM I2t PGM ( PG AV) IFGM VFGM VRGM di/dt VISO Tj Tstg *Repetitive Peak Reverse Voltage *Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item *Average On-State Current *R.M.S. On-State Current *Surge On-State Current *I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current *Isolation Breakdown Voltage (R.M.S.) *Operating Junction Temperature *Storage Temperature Mounting M5) ( Mounting Torque Terminal(M5) Mass 6.5 29max A1K2 (K2) K1 (A2) Unit:A 3.5 7.5 3.5 2- 6 20 20 92 20 17.5 V V V Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N・m (㎏f・B) g Conditions Single phase, half wave, 180° conduction, Tc:96℃ Single phase, half wave, 180° conduction, Tc:96℃ 1 cycle, 50Hz/60Hz, peak Value, non-repetitive / 2 Value for one cycle of surge current IG=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/ s Tj V/ dI μ A.C.1minute Recommended Value 1.5-2.5(15-25) Recommended Value 1.5-2.5(15-25) ■Electrical Characteristics Symbol Item DRM I Repetitive Peak Off-State Current, max. IRRM *Repetitive Peak Reverse Current, max. VTM *Peak On-State Voltage, max. IGT/VGT Gate Trigger Current/Voltage, max. VGD Non-Trigger Gate, Voltage. min. tgt Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. dv/dt IH Holding Current, typ. IL Lutching Current, typ. Rth j-c)*Thermal Impedance, max. ( *mark:Thyristor and Diode part. No mark:Thyristor part Conditions at VDRM, single phase, half wave, Tj=125℃ at VDRM, single phase, half wave, Tj=125℃ On-State Current 75A, Tj=25℃ Inst. measurement Tj=25℃,IT=1A,VD=6V Tj=125℃,VD=1 2VDRM / T=25A,G=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/ s I I Tj V/ dI μ Tj=125℃, VD=2 3VDRM, Exponential wave. / Tj=25℃ Tj=25℃ Junction to case Ratings 10 10 1.55 50/3 0.25 10 500 50 100 0.78 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com 2 11 0 Gate Characteristics Peak Forward Gate Voltage (10V) Gate Voltage (V) Ga te 2 10 0 5 125℃ 25℃ −30℃ Po we ( r Peak Gate Current (3A) 5 Av er ag e ) On-State Current (A) Pe Po ak G we a ( te r 10 W 1W ) 2 1 −1 1 0 1 0 Maximum Gate Voltage that will not trigger any unit 2 5 12 0 2 5 13 0 2 Gate Current (mA) Allowable Case Temperature (℃) 6 0 Average On-State Current Vs Power Dissipation (Single phase half wave) Per one element Power Dissipation (W) 5 0 4 0 3 0 2 0 1 0 0 0 D.C. θ =180゜ θ =120゜ θ =90゜ θ =60゜ θ =30゜ 360 。 2 : Conduction Angle 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 Average On-State Current (A) Transient Thermal Impedance θ (℃/W) j-c 80 0 Surge On-State Current Rating (Non-Repetitive) Per one element T = 5 start j2 ℃ Surge On-State Current (A) 60 0 ; PK(PD,PE,KK)25F 13 0 On-State Voltage max 5 2 12 0 5 2 11 0 5 5 0 1 2 3 4 5 On-State Voltage (V) 10 3 10 2 10 1 10 0 9 0 8 0 Average On-State Current Vs Maximum Allowable Case Temperature (Single phase half wave) Per one element 2 360 。 : Conduction Angle θ =30゜ θ =90゜ θ =180゜ D.C. =120゜ θ =60゜ θ 5 0 7 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 Average On-State Current (A) 10 . Transient Thermal Impedance Per one element 09 . Junction to case 08 . 07 . 06 . 05 . 04 . 03 . 02 . 40 0 60Hz 50Hz 20 0 01 . 0 −3 1 0 1 −2 0 1 −1 0 10 0 11 0 12 0 13 0 14 0 00 1 0 2 5 11 0 2 5 12 0 Time (Cycles) Time t sec) ( Allowable Case Temperature (℃) 20 5 Total Power Dissipation (W) Conduction Angle θ 180° Id Ar.m.s.) ( 20 0 W3 B6 B2 R th:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Id Aav.) ( 9 0 Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Id Aav.) ( 10 0 10 5 10 0 10 0 Id Ar.m.s.) ( 10 1 W1 9 0 10 0 10 1 10 2 15 2 4 0 8 0 10 2 5 0 10 1 10 2 15 2 2 0 4 0 6 0 0 4 0 8 0 10 2 10 2 0 4 0 8 0 10 2 15 2 0 0 0 Output Current (A) Ambient Temperature (℃) Ambient Temperature (℃) Ambient Temperature (℃) Allowable Case Temperature (℃) Output Current W1 Bidirectional connection ; B2 ;Two Pluse bridge connection B6 Six pulse bridge connection ; W3 Three phase ; bidiretional connection
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