KK55HB160

THYRISTOR MODULE PK(PD,PE,KK)55HB UL;E76102 M） （ Power Thyristor/Diode Module PK55HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. and electrically isolated mounting base make your mechanical design easy. 26MAX 3 93.5MAX 80 2 + – 1 K2 G2 2- 6.5 ● IT(AV) 55A, IT(RMS) 86A, ITSM 1100A 13 150 A/μs ● dv/dt 500V/μs ● di/dt Internal Configurations K2 G2 3 2 16.5 23 23 K1 G1 ~ 3-M5 （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches A1K2 （K2） 3 2 PK K2 3 2 2 PE K2 G2 K1 （A2） G1 1 A1K2 （K2） K1 （A2） G1 1 1 （A1） 21 A1K2 （K2） K1 （A2） 1 30MAX K1 （A2） G1 1 K2 G2 110TAB PD KK Unit：A ■Maximum Ratings Symbol VRRM VRSM VDRM Symbol （ IT RMS） Item ＊Repetitive Peak Reverse Voltage ＊Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item ＊R.M.S. On-State Current ＊Surge On-State Current ＊I t 2 Ratings PK55HB120 PD55HB120 PK55HB160 PD55HB160 KK55HB120 PE55HB120 KK55HB160 PE55HB160 1200 1600 1350 1200 Conditions Single phase, half wave, 180° conduction, Tc：85℃ Single phase, half wave, 180° conduction, Tc：85℃ 1 cycle, ／ 2 Unit V V V 1700 1600 Ratings 55 86 1000/1100 5000 10 3 3 10 5 Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N･ｍ （㎏f･B） g （ IT AV） ＊Average On-State Current ITSM It 2 50Hz/60Hz, peak Value, non-repetitive Value for one cycle of surge current PGM （ PG AV） Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current ＊Isolation Breakdown Voltage (R.M.S.) ＊Operating Junction Temperature ＊Storage Temperature Mounting Torque Mass Mounting M6） （ Terminal（M5） Recommended Value 2.5-3.9（25-40） Recommended Value 1.5-2.5（15-25） IG＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝0.1A/μs Tj V／ dI A.C.1minute IFGM VFGM VRGM di／dt VISO Tj Tstg 150 2500 −40 to ＋125 −40 to ＋125 4.7（48） 2.7（28） 170 ■Electrical Characteristics Symbol IDRM IRRM VTM IGT／VGT VGD tgt dv／dt IH IL Item Repetitive Peak Off-State Current, max. ＊Repetitive Peak Reverse Current, max. ＊Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Conditions at VDRM, single phase, half wave, Tj＝125℃ at VDRM, single phase, half wave, Tj＝125℃ On-State Current 165A, Tj＝125℃ Inst. measurement Tj＝25℃，IT＝1A，VD＝6V Tj＝125℃，VD＝1 2VDRM ／ IT＝55A，G＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝0.1A/ s I Tj V／ dI μ Tj＝125℃, VD＝2 3VDRM, Exponential wave. ／ Tj＝25℃ Tj＝25℃ Junction to case Ratings 10 10 1.50 100/2 0.25 10 500 50 100 0.50 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W Rth j-c）＊Thermal Impedance, max. （ ＊mark：Thyristor and Diode part. No mark：Thyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com ２ １１ ０ Gate Characteristics Peak Forward Gate Voltage （10V） Av er ag e On-State Current （A） Gate Voltage （V） ２ １０ ０ ５ 125℃ 25℃ −30℃ Po we （ r Peak Gate Current （3A） ５ Ga te Pe Po ak G we a （ te r 10 W 3W ２ １１ ０ １ ０ − １ Maximum Gate Voltage that will not trigger any unit （0.25V） ２ ５ １２ ０ ２ ５ １３ ０ ２ Gate Current （mA） Per one element Allowable Case Temperature （℃） １０ ２ Average On-State Current Vs Power Dissipation （Single phase half wave） D.C. １０ ０ ８ ０ ６ ０ ４ ０ 360 。 θ ＝180゜ θ ＝120゜ θ ＝90゜ θ ＝60゜ θ ＝30゜ ２ ０ : Conduction Angle ０ １ ０２ ０ ３ ０ ４ ０ ５ ０ ６ ０ ７ ０ ８ ０ ９ ０ Average On-State Current （A） Transient Thermal Impedance θ （℃/W） j-c Surge On-State Current Rating （Non-Repetitive） Surge On-State Current （A） １０ ００ ８０ ０ ６０ ０ ４０ ０ ２０ ０ ０ １ 60Hz 50Hz Per one element Ｔ = ５ start ｊ２ ℃ ２ ５ １ ０ ２ ０ ５ ０ ; PK(PD,PE,KK)55HB ５ ２ On-State Voltage max ） １２ ０ ５ ２ Tj＝125℃ ） １１ ０ ５ ５ ０５ ． １０ ． １５ ． ２０ ． ２５ ． ３０ ． On-State Voltage （V） １０ ４ １０ ２ １０ ０ ８ ０ ６ ０ ４ ０ ２ ０ Average On-State Current Vs Maximum Allowable Case Temperature （Single phase half wave） Per one element 2 Power Dissipation （W） 360 。 : Conduction Angle 2 θ ＝30゜ θ ＝90゜ θ ＝180゜ D.C. θ ＝60゜ θ ＝120゜ １０ ０ ０ １ ０２ ０ ３ ０ ４ ０ ５ ０ ６ ０ ７ ０ ８ ０９ ０ １０ ０ Average On-State Current （A） Transient Thermal Impedance １０ ２ ０ ５ １１ ０ Junction to case ０６ ． ０５ ． ０４ ． ０３ ． Per one element ０２ ． ０１ ． ０ １０ ０ １ −３ ２ ０ ５ １ −２ ２ ０ Time （cycles） Time t sec） （ ５ １ −１ ２ ０ ５ １０ ０ Allowable Case Temperature （℃） Total Power Dissipation （W） Conduction Angle 180゜ B6 Total Power Dissipation （W） W3 Id Ar.m.s.） （ ４０ ０ B2 R th:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W W1 ４０ ０ Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W Id Aav.） （ Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W ９ ０ ３０ ０ ２０ ０ ３０ ０ ２０ ０ ９ ０ １０ ０ １０ １ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５０５０２ Id Aav.） （ １０ ０ １０ １ Id Ar.m.s.） （ ９ ０ １０ ０ １０ １ １０ ２ １５ ２ ０ ２ ５ ７ １ ０１ ５ ５ ０ ５０２ １０ ０ １０ ０ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５０５０２ ０ ０ ５ ０ １０ ０ １０ ５ ０ Output Current （A） Ambient Temperature （℃） Ambient Temperature （℃） Ambient Temperature （℃） Allowable Case Temperature （℃） ５０ ０ Output Current W１ Bidirectional connection ； ５０ ０ B２ ；Two Pluse bridge connection B６ Six pulse bridge connection ； Ｗ３ Three phase ； bidiretional connection