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PD130F80

PD130F80

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    PD130F80 - THYRISTOR MODULE - SanRex Corporation

  • 数据手册
  • 价格&库存
PD130F80 数据手册
THYRISTOR MODULE PK(PD,PE,KK)130F UL:E76102 M) ( Power Thyristor/Diode Module PK130F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Two elements in a package and electrically isolated mounting base make your mechanical design easy. ● IT(AV) 130A, IT(RMS) 205A, ITSM 4400A ● di/dt ● dv/dt 60 48 24 92 12 26 26 7 4- (M5) φ6 5 12 5 K1G1 K2G2 18 K2 G2 3 2 1 200 A/μs 500V/μs K2 G2 3 2 2 M8×14 R8.0 ♯110TAB (2.8.0.5T) (Applications) Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches A1K2 (K2) K1 (A2) G1 A1K2 (K2) K1 (A2) 1 42max 34max PK K2 3 2 2 PE K2 G2 K1 (A2) G1 1 52 80±0.3 A1K2 (K2) K1 (A2) G1 1 1 (A1) PD KK ■Maximum Ratings Ratings Symbol Item PK130F40 PD130F40 PE130F40 KK130F40 400 480 400 PK130F80 PD130F80 PE130F80 KK130F80 800 960 800 PK130F120 PD130F120 PE130F120 KK130F120 1200 1300 1200 PK130F160 PD130F160 PE130F160 KK130F160 1600 1700 1600 Ratings 130 205 4000/4400 8×104 10 3 3 10 5 200 2500 −40 to +125 −40 to +125 2.7(28) 11(115) 510 Unit VRRM VRSM VDRM Symbol ( IT AV) ( IT RMS) ITSM I2t PGM ( PG AV) IFGM VFGM VRGM di/dt VISO Tj Tstg *Repetitive Peak Reverse Voltage *Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item *Average On-State Current *R.M.S. On-State Current *Surge On-State Current *I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current *Isolation Breakdown Voltage (R.M.S.) *Operating Junction Temperature *Storage Temperature Mounting M5) ( Mounting Torque Terminal(M8) Mass 33 Unit:A V V V Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N・m (㎏f・B) g Conditions Single phase, half wave, 180° conduction, Tc:90℃ Single phase, half wave, 180° conduction, Tc:90℃ 1 cycle, 50Hz/60Hz, peak Value, non-repetitive / 2 Value for one cycle of surge current IG=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/ s Tj V/ dI μ A.C.1minute Recommended 1.5-2.5(15-25) Recommended 8.8-10(90-105) ■Electrical Characteristics Symbol Item DRM I Repetitive Peak Off-State Current, max. IRRM *Repetitive Peak Reverse Current, max. VTM *Peak On-State Voltage, max. IGT/VGT Gate Trigger Current/Voltage, max. VGD Non-Trigger Gate, Voltage. min. tgt Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. dv/dt IH Holding Current, typ. IL Lutching Current, typ. Rth j-c)*Thermal Impedance, max. ( *mark:Thyristor and Diode part. No mark:Thyristor part Conditions at VDRM, single phase, half wave, Tj=125℃ at VDRM, single phase, half wave, Tj=125℃ On-State Current 400A, Tj=25℃ Inst. measurement Tj=25℃,IT=1A,VD=6V Tj=125℃,VD=1 2VDRM / T=130A,G=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/ s μ I I Tj V/ dI Tj=125℃, VD=2 3VDRM, Exponential wave. / Tj=25℃ Tj=25℃ Junction to case Ratings 50 50 1.40 100/3 0.25 10 500 50 100 0.2 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com 2 11 0 5 2 10 0 5 2 − 1 11 0 1 0 20 6 20 4 20 2 20 0 10 8 10 6 10 4 10 2 10 0 8 0 6 0 4 0 2 0 0 Transient Thermal Impedance θ (℃/W) j-c 50 00 Surge On-State Current (A) 40 00 30 00 20 00 10 00 ; ; Gate Characteristics Peak Forward Gate Voltage 10V) ( Peak Gate Current (3A) Pe a Po k G A we ate Po ver ( r we ag 10 eG ( r W 3W a ) te ) PK(PD,PE,KK)130F On-State Voltage max 2 On-State Current (A) 13 0 5 2 12 0 5 2 1 0 05 . 10 . 1. 5 20 . 25 . 35 . Gate Voltage (V) 125℃ 25℃ −30℃ Maximum Gate Voltage that will not trigger any unit 2 5 12 0 2 5 13 0 2 5 Gate Current (mA) On-State Voltage (V) Per one element D.C. Allowable Case Temperature (℃) Average On-State Current Vs Power Dissipation (Single phase half wave) 10 3 10 2 10 1 10 0 9 0 8 0 7 0 6 0 Average On-State Current Vs Maximum Allowable Case Temperature (Single phase half wave) Per one element 2 360 。 Power Dissipation (W) θ =180゜ θ =120゜ θ =90゜ : Conduction Angle θ =60゜ θ =30゜ 2 360 。 θ =30゜ θ =60゜ =90゜ =120゜ =180゜ θ θ θ : Conduction Angle D.C. 2 4 6 8 10 1010 10 10 20 20 0000024680 2 5 0 0 2 4 6 8 10 10 10 1010 2 0 2 0 0000024 6802 Average On-State Current (A) Average On-State Current (A) Surge On-State Current Rating (Non-Repetitive) Per one element T = 5 start j2 ℃ Transient Thermal Impedance Per one element Junction to case 02 . 60Hz 50Hz 01 . 00 1 0 2 5 11 0 2 5 12 0 0 −3 1 0 1 −2 0 Time (cycles) Time t sec) ( 1 −1 0 10 0 11 0 Output Current Total Power Dissipation (W) 10 00 80 0 B2 Conduction Angle 180゜ W3 B6 W1 Bidirectional connection ; Id Ar.m.s.) ( Id Aav.) ( Id Aav.) ( 9 0 Id Ar.m.s.) ( 60 0 40 0 20 0 0 0 W1 R th:0.5℃/W Rth:0.4℃/W Rth:0.3℃/W Rth:0.2℃/W Rth:0.1℃/W Rth: 0.05℃/W Rth:0.5℃/W Rth:0.4℃/W Rth:0.3℃/W Rth:0.2℃/W 9 0 10 0 10 1 9 0 10 0 10 1 10 2 15 2 Rth:0.1℃/W Rth: 0.05℃/W Rth:0.5℃/W Rth:0.4℃/W Rth:0.3℃/W Rth:0.2℃/W Rth:0.1℃/W Rth: 0.05℃/W 10 0 10 1 10 0 20 0 30 0 0 2 4 6 8 1 01 0 00 000 2 0 2 4 6 8 1010 0 0 0002 Output Current (A) Ambient Temperature (℃) 10 2 15 2 0 2 4 6 8 1010 0 00 00 2 10 2 15 2 Ambient Temperature (℃) Ambient Temperature (℃) Allowable Case Temperature (℃) B2 ;Two Pluse bridge connection B6 Six pulse bridge connection ; W3 Three phase ; bidiretional connection
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