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PE200GB40

PE200GB40

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    PE200GB40 - THYRISTOR MODULE - SanRex Corporation

  • 数据手册
  • 价格&库存
PE200GB40 数据手册
THYRISTOR MODULE PK(PD,PE)200GB UL;E76102 M) ( Power Thyristor/Diode Module PK200GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. Isolated mounting base ● di/dt ● IT AV)200A, IT RMS)310A, ITSM 5500A ( ( ● dv/dt 92 12 26 26 7 4- (M5) φ6 5 12 5 K1G1 K2G2 18 2 M8×14 ♯110TAB (2.8.0.5T) K2 G2 3 2 200 A/μs 500V/μs Internal Configurations K2 G2 3 2 60 48 24 (Applications) Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches R8.0 52 80±0.3 A1K2 (K2) K (A2) 1 G1 1 3 2 A1K2 (K2) K1 (A2) G1 1 A1K2 (K2) K1 (A2) 1 PK PD PE ■Maximum Ratings Ratings Symbol VRRM VRSM VDRM Symbol ( IT RMS) Item *Repetitive Peak Reverse Voltage *Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item *R.M.S. On-State Current *Surge On-State Current *I t 2 33 K2 42max 34max Unit:A PK200GB40 PE200GB40 PD200GB40 PK200GB80 PE200GB80 PD200GB80 Unit V V V 400 480 400 Conditions Single phase, half wave, 180° conduction, Tc:74℃ Single phase, half wave, 180° conduction, Tc:74℃ 1 cycle, / 2 800 960 800 Ratings 200 310 5000/5500 125000 10 3 3 10 5 Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N・m (㎏f・B) g ( IT AV) *Average On-State Current ITSM It 2 50Hz/60Hz, peak Value, non-reqetitive Value for one cycle of surge current PGM ( PG AV) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage(Forward) Peak Gate Voltage(Reverse) Critical Rate of Rise of On-State Current *Isolation Breakdown Voltage(R.M.S.) *Operating Junction Temperature *Storage Temperature Mounting Torque Mass Mounting(M5) Recommended Value 1.5-2.5(15-25) Terminal(M8) Recommended Value 8.8-10 (90-105) Typical Value IG=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/ s Tj V/ dI μ A.C. 1 minute IFGM VFGM VRGM di/dt VISO Tj Tstg 200 2500 −40 to +125 −40 to +125 2.7(28) 11(115) 510 ■Electrical Characteristics Symbol IDRM IRRM VTM IGT/VGT VGD tgt dv/dt IH IL Item Repetitive Peak Off-State Current, max. *Repetitive Peak Reverse Current, max. *Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Conditions at VDRM, Single phase, half wave, Tj=125℃ at VDRM, Single phase, half wave, Tj=125℃ On-State Current 600A, Tj=125℃ Inst. measurement Tj=25℃,IT=1A,VD=6V Tj=125℃,VD=1 2VDRM / IT=200A,G=100mA, =25℃, VD=1 2VDRM, G/dt=0.1A/μs I Tj / dI Tj=125℃, VD=2 3VDRM, Exponential wave. / Tj=25℃ Tj=25℃ Junction to case Ratings 50 50 1.50 100/3 0.25 10 500 50 100 0.18 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W Rth j-c)*Thermal Impedance, max. ( *mark:Thyristor and Diode part. No mark:Thyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com 2 11 0 Gate Characteristics Peak Forward Gate Voltage Voltage (10V) (10V) Peak Forward Gate 5 2 10 0 5 2 25℃ 125℃ −30℃ On-State Current (A) Gate Voltage (V) Peak Gate Current (3A) Peak Gate Current (3A) Pe P ak P ( eak owe Gat (e 10 G r 10 W at W )e Av Po ) er we ag r e Ga te Po we ( r 3W ) Maximum Gate Non-Trigger Voltage (3A) 11 0 1 0 − 1 2 5 12 0 2 5 13 0 2 Gate Current (mA) Allowable Case Temperature (℃) 40 0 Average On-State Current Vs Power Dissipation (Single phase half wave) Per Per one element 30 0 10 2゜ 9゜ 0 DC 10 8゜ 20 0 3゜ 0 6゜ 0 10 0 0 π θ 360゜ θ:Conduction Angle 0 0 10 0 20 0 30 0 Average On-State Current (A) Transient Thermal Impedance θ (℃/W) j-c 60 00 Surge On-State Current Rating (Non-Repetitive) Per Per one element T = 5 start j2 ℃ Surge On-State Current (A) 50 00 40 00 60Hz 30 00 20 00 10 00 00 1 0 50Hz ; PK(PD,PE)200GB On-State Characteristics 2 13 0 Tj= 2 ℃ 15 5 2 12 0 5 2 5 11 0 05 . 10 . 15 . 20 . 25 . 30 . On-State Voltage (V) 10 4 Average On-State Current Vs Maximum Allowable Case Temperature (Single phase half wave) Per one element Power Dissipation (W) 10 2 10 0 8 0 0 π 2 π θ 360゜ θ:Conduction Angle 2 π 6 0 3 ゜ 6 ゜9 ゜ 10 10 0 0 0 2゜ 8゜ DC 40 0 4 0 0 10 0 20 0 30 0 40 0 Average On-state Current (A) 02 . Transient Thermal Impedance Maximum 01 . Junction to Case Per one element Tj 25℃ start W3 2 5 11 0 2 5 12 0 0 -3 12 0 5 1 -2 2 0 Time (cycles) Time t sec) ( 5 1 -1 2 0 5 10 2 0 5 11 0 Allowable Case Temperature (℃) Total Power Dissipation (W) ID Ar.m.s.) ( 7 0 8 0 7 0 Id Aav.) ( B6 W1:Bidirectional connection Id Aav.) ( 7 0 8 0 9 0 Rth(f-a):0.5℃/W Rth(f-a):0.4℃/W Rth(f-a):0.3℃/W Rth(f-a):0.2℃/W Rth(f-a):0.1℃/W Rth(f-a):0.05℃/W W3 10 50 B6 8 0 W3 Id Ar.m.s.) ( 10 20 90 0 60 0 W1 Rth(f-a):0.5℃/W Rth(f-a):0.4℃/W Rth(f-a):0.3℃/W Rth(f-a):0.2℃/W Rth(f-a):0.1℃/W Rth(f-a):0.05℃/W 9 0 10 0 10 1 総 損 失 (W) Rth(f-a):0.5℃/W Rth(f-a):0.4℃/W Rth(f-a):0.3℃/W Rth(f-a):0.2℃/W Rth(f-a):0.1℃/W Rth(f-a):0.05℃/W 9 0 10 0 10 1 10 2 15 2 10 0 10 1 10 2 15 2 30 0 Conduction Angle θ 180° 0 0 Rth(f-a): Thermal resistance between fin ambient 20 5 5 0 0 2 4 6 8 1 01 0 0 0 0 0 00 2 10 2 15 2 0 2 4 6 8 1 01 0 0 0 0 00 2 0 2 4 6 8 1 01 0 0 0 0 00 2 Output Current (A) Ambient Temperature (℃) Ambient Temperature (℃) Ambient Temperature (℃) Allowable Case Temperature (℃) 10 80 Output Current W1 Bidirectional connection ; B2 ;Two Pluse bridge connection B6 Six pulse bridge connection ; W3 Three phase ; bidiretional connection
PE200GB40 价格&库存

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