PE25HB160

THYRISTOR MODULE PK(PD,PE,KK)25HB UL;E76102 M） （ Power Thyristor/Diode Module PK25HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. and electrically isolated mounting base make your mechanical design easy. ● IT(AV) 25A, IT(RMS) 39A, ITSM 500A 26MAX 3 93.5MAX 80 2 + – 1 K2 G2 2- 6.5 13 100 A/μs ● dv/dt 500V/μs ● di/dt Internal Configurations K2 G2 3 2 16.5 23 23 （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches A1K2 （K2） K1 （A2） G1 1 K2 G2 3 2 K1 G1 ~ 3-M5 110TAB 30MAX A1K2 （K2） K1 （A2） 1 PK K2 3 2 2 PE K2 G2 K1 （A2） G1 1 A1K2 （K2） K1 （A2） G1 1 1 （A1） 21 PD KK Unit：A ■Maximum Ratings Ratings Symbol VRRM VRSM VDRM Symbol （ IT RMS） Item ＊Repetitive Peak Reverse Voltage ＊Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item ＊R.M.S. On-State Current ＊Surge On-State Current ＊I t 2 PK25HB120 PD25HB120 KK25HB120 PE25HB120 1200 1350 1200 Conditions PK25HB160 PD25HB160 KK25HB160 PE25HB160 1600 1700 1600 Ratings 25 39 450/500 1000 10 1 3 10 5 Unit V V V Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N･ｍ （㎏f･B） g （ IT AV） ＊Average On-State Current Single phase, half wave, 180° conduction, Tc：94℃ Single phase, half wave, 180° conduction, Tc：94℃ 1 cycle, ／ 2 ITSM It 2 50Hz/60Hz, peak Value, non-repetitive Value for one cycle of surge current PGM （ PG AV） Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current ＊Isolation Breakdown Voltage (R.M.S.) ＊Operating Junction Temperature ＊Storage Temperature Mounting Torque Mass Mounting M6） （ Terminal（M5） Recommended Value 2.5-3.9（25-40） Recommended Value 1.5-2.5（15-25） IG＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝0.1A/ s Tj V／ dI μ A.C.1minute IFGM VFGM VRGM di／dt VISO Tj Tstg 100 2500 −40 to ＋125 −40 to ＋125 4.7（ 48） 2.7（28） 170 ■Electrical Characteristics Symbol IDRM IRRM VTM IGT／VGT VGD tgt dv／dt IH IL Item Repetitive Peak Off-State Current, max. ＊Repetitive Peak Reverse Current, max. ＊Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Conditions at VDRM, single phase, half wave, Tj＝125℃ at VDRM, single phase, half wave, Tj＝125℃ On-State Current 75A, Tj＝125℃ Inst. measurement Tj＝25℃，IT＝1A，VD＝6V Tj＝125℃，VD＝1 2VDRM ／ IT＝25A，G＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝0.1A/ s I Tj V／ dI μ Tj＝125℃, VD＝2 3VDRM, Exponential wave. ／ Tj＝25℃ Tj＝25℃ Junction to case Ratings 4 4 1.60 50/2 0.25 10 500 50 100 0.80 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W Rth j-c）＊Thermal Impedance, max. （ ＊mark：Thyristor and Diode part. No mark：Thyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com ２ １１ ０ Gate Characteristics Peak Forward Gate Voltage （10V） On-State Current （A） Gate Voltage （V） ５ ２ １０ ０ ５ 125℃ 25℃ −30℃ Ga te Peak Gate Current （3A） Av er ag e Pe Po ak G we a （ te r 10 W Po we （ r 1W ） ２ １ −１ ０ １１ ０ ２ Maximum Gate Voltage that will not trigger any unit （0.25V） ５ １２ ０ ２ ５ １３ ０ ２ Gate Current （mA） ６ ０ Allowable Case Temperature （℃） Average On-State Current Vs Power Dissipation （Single phase half wave） Per one element Power Dissipation （W） ５ ０ ４ ０ ３ ０ ２ ０ θ ＝180゜ θ ＝120゜ θ ＝90゜ θ ＝60゜ θ ＝30゜ D.C. 360 。 １ ０ : Conduction Angle ０ １ ０ ２ ０ ３ ０ ４ ０ Average On-State Current （A） Transient Thermal Impedance θ （℃/W） j-c ６０ ０ Surge On-State Current Rating （Non-Repetitive） Per one element Ｔ = ５ start ｊ２ ℃ Surge On-State Current （A） ５０ ０ ４０ ０ ; PK(PD,PE,KK)25HB ５ ２ On-State Voltage max Tj＝125℃ ） １２ ０ ５ ２ １１ ０ ５ ５ ０５ ． １０ ． １５ ． ２０ ． ２５ ． ３０ ． On-State Voltage （V） １０ ４ １０ ２ １０ ０ ８ ０ ６ ０ ４ ０ ２ ０ Average On-State Current Vs Maximum Allowable Case Temperature （Single phase half wave） Per one element 2 360 。 : Conduction Angle 2 θ ＝30゜ ＝180゜ θ ＝90゜ θ ＝120゜ θ ＝60゜ θ D.C. ５ ０ ０ １ ０ ２ ０ ３ ０ ４ ０ ５ ０ Average On-State Current （A） Transient Thermal Impedance １０ ２ ０ ５ １１ ０ Junction to case ０９ ． ０６ ． Per one element ３０ ０ ２０ ０ １０ ０ ０ １ 50Hz 60Hz ０３ ． ２ ５ １ ０ ２ ０ ５ ０ １０ ０ ０ １ -３ ２ ０ ５ １ -２ ２ ０ Time （cycles） Time t sec） （ ５ １ -１ ２ ０ ５ １０ ０ Total Power Dissipation （W） Total Power Dissipation （W） Conduction Angle 180゜ W3 B6 Id Ar.m.s.） （ ２０ ０ B2 Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.1℃/W W1 ２０ ０ R th:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.1℃/W Id Aav.） （ Rth:1.0℃/W Rth:0.1 ℃/W Id Aav.） （ １０ ０ １０ ５ １０ ０ １０ ５ １０ ０ R th:0.8℃/W １０ ０ １０ １ ５ ０ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５ ０ ５０ ２ Id Ar.m.s.） （ １０ １ Rth:0.6℃/W Rth:0.4℃/W ９ ０ １０ ０ １０ １ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５ ０ ５０ ２ ５ ０ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５０５０２ ０ ２ ５ ５ ０ ７ ５ Output Current （A） Ambient Temperature （℃） Ambient Temperature （℃） Ambient Temperature （℃） Allowable Case Temperature （℃） ２０ ５ Allowable Case Temperature （℃） Output Current W１ Bidirectional connection ； ２０ ５ B２ ；Two Pluse bridge connection B６ Six pulse bridge connection ； Ｗ３ Three phase ； bidiretional connection