THYRISTOR MODULE
PK(PD,PE)200HB
UL;E76102 M) ( Power Thyristor/Diode Module PK200HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. Isolated mounting base ● IT AV)200A, IT RMS)310A, ITSM 5500A ( ( ● di/dt 200 A/μs ● dv/dt 500V/μs (Applications) Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches Internal Configurations
92 12 26 26 7 4- (M5) φ6 5 12 5 K1G1 K2G2 18 2 M8×14 ♯110TAB (2.8.0.5T)
K2 G2
3 2
60 48 24
R8.0
52 80±0.3
A1K2
(K2)
K1 (A2) G1
1
3
2
A1K2
(K2)
K1 (A2) G1
1
3
2
A1K2
(K2)
K1 (A2)
1
PK
PD
PE
■Maximum Ratings
Symbol VRRM VRSM VDRM Symbol
( IT RMS)
Item *Repetitive Peak Reverse Voltage *Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item *R.M.S. On-State Current *Surge On-State Current *I t
2
PK200HB120 PE200HB120
Ratings PD200HB120 PK200HB160 PE200HB160
33
K2
K2 G2
42max 34max
Unit:A
PD200HB160
Unit V V V
1200 1300 1200 Conditions Single phase, half wave, 180° conduction, Tc:74℃ Single phase, half wave, 180° conduction, Tc:74℃
1 cycle, / 2
1600 1700 1600 Ratings 200 310 5000/5500 125000 10 3 3 10 5
Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N・m (㎏f・B) g
( IT AV) *Average On-State Current
ITSM It
2
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
PGM
( PG AV)
Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage(Forward) Peak Gate Voltage(Reverse) Critical Rate of Rise of On-State Current *Isolation Breakdown Voltage(R.M.S.) *Operating Junction Temperature *Storage Temperature Mounting Torque Mass Mounting(M5) Recommended Value 1.5-2.5(15-25) Terminal(M8) Recommended Value 8.8-10 (90-105) Typical Value IG=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/ s Tj V/ dI μ A.C. 1 minute
IFGM VFGM VRGM di/dt VISO Tj Tstg
200 2500 −40 to +125 −40 to +125 2.7(28) 11(115) 510
■Electrical Characteristics
Symbol IDRM IRRM VTM IGT/VGT VGD tgt dv/dt IH IL Item Repetitive Peak Off-State Current, max. *Repetitive Peak Reverse Current, max. *Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Conditions at VDRM, Single phase, half wave, Tj=125℃ at VDRM, Single phase, half wave, Tj=125℃ On-State Current 750A, Tj=125℃ Inst. measurement Tj=25℃,IT=1A,VD=6V Tj=125℃,VD=1 2VDRM / IT=250A,G=100mA, =25℃, D=1 2VDRM, G/dt=0.1A/μs I Tj V/ dI Tj=125℃,VD=2 3VDRM,Exponential wave. / Tj=25℃ Tj=25℃ Junction to case Ratings 50 50 1.50 100/3 0.25 10 500 50 100 0.18 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W
Rth j-c) *Thermal Impedance, max. (
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
2 11 0
5 2
0
1 0
5 2
1 0
ー 1
11 0
Allowable Case Temperature (℃)
40 0
30 0
20 0
10 0
0 0
Transient Thermal Impedance θ (℃/W) j-c
60 00
Surge On-State Current (A)
50 00 40 00
; ;
Gate Characteristics
Peak Forward Gate Voltage (10V) Peak Gate Current (3A) Peak
P (P a ( 1eeak 100 k G WG W ) aate ) te P Av Av Poo er era w wee age ge rr Ga Ga tte eP Po ow we err ( (3 3W W) )
PK(PD,PE)200HB
On-State Characteristics
2
Tj=125℃
On-State Current (A)
13 0 5 2
Gate Voltage (V)
−30℃
12 0 5 2 11 0 05 . 10 . 15 . 20 . 25 . 30 .
25℃
125℃
Maximum Gate Non-Trigger Voltage (3A)
2
5
12 0
2
5
13 0
2
5
Gate Current (mA)
On-State Voltage (V)
Average On-State Current Vs Power Dissipation (Single phase half wave)
Per one element
10 4
Average On-State Current Vs Maximum Allowable Case Temperature (Single phase half wave)
Per one element
Power Dissipation (W)
DC
10 2 10 0
0 π θ 360゜
θ:Conduction Angle
10 8゜
10 2゜
9゜ 0
6゜ 0
2 π
3゜ 0
8 0
0
π
2 π
θ
360゜
6 0
3 ゜ 6 ゜9 ゜ 10 10 0 0 0 2゜ 8゜
DC
θ:Conduction Angle
10 0
20 0
30 0
40 0
4 0 0
10 0
20 0
30 0
40 0
Average On-State Current (A)
Average On-State Current (A)
Surge On-State Current Rating (Non-Repetitive)
Per one element Per T = 5 start j2 ℃
02 .
Transient Thermal Impedance
Maximum
60Hz
30 00 20 00 10 00 0 1
50Hz
01 .
Junction to Case Per one element
2
5
1 0
2 0
5 0
10 0
0 -3 12 0
5 1 -2 2 0
5 1 -1 2 0
5 10 2 0
5 11 0
Time (cycles)
Time t sec) (
Allowable Case Temperature (℃)
Total Power Dissipation (W)
ID Ar.m.s.) (
7 0 8 0
W1:Bidirectional connection
Id Aav.) (
7 0 8 0
B6
Id Aav.) (
7 0 8 0 9 0
10 50 10 20 90 0
B2
W3 B6
W3
Id Ar.m.s.) (
Rth(f-a):0.5℃/W Rth(f-a):0.4℃/W Rth(f-a):0.3℃/W Rth(f-a):0.2℃/W Rth(f-a):0.1℃/W Rth(f-a):0.05℃/W
9 0 10 0 10 1
Rth(f-a):0.5℃/W Rth(f-a):0.4℃/W Rth(f-a):0.3℃/W Rth(f-a):0.2℃/W Rth(f-a):0.1℃/W Rth(f-a):0.05℃/W
9 0 10 0 10 1 10 2 15 2
Rth(f-a):0.5℃/W Rth(f-a):0.4℃/W Rth(f-a):0.3℃/W Rth(f-a):0.2℃/W Rth(f-a):0.1℃/W Rth(f-a):0.05℃/W
10 0 10 1 10 2 15 2
60 0
W1
30 0
Conduction Angle θ 180°
0 0
Rth(f-a): Thermal resistance between fin ambient
20 5
5 0 0 2 4 6 8 1 01 0 0 0 0 0 00 2
10 2 15 2
0 2 4 6 8 1 01 0 0 0 0 00 2
0 2 4 6 8 1 01 0 0 0 0 00 2
Output Current (A)
Ambient Temperature (℃)
Ambient Temperature (℃)
Ambient Temperature (℃)
Allowable Case Temperature (℃)
10 80
Output Current
W1 Bidirectional connection ;
B2 ;Two Pluse bridge connection
B6 Six pulse bridge connection ; W3 Three phase ; bidiretional connection
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