PK90GB80

THYRISTOR MODULE PK(PD,PE,KK)90GB UL;E76102 M） （ Power Thyristor/Diode Module PK90GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. and electrically isolated mounting base make your mechanical design easy. 26MAX 93.5MAX 80 3 2 + – 1 K2 G2 2- 6.5 ● di/dt ● dv/dt 200 A/μs 500V/μs 16.5 23 23 （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches K2 G2 3 2 A1K2 （K2） K1 （A2） G1 1 K2 G2 3 2 K1 G1 Internal Configurations 13 ● IT(AV) 90A, IT(RMS) 140A, ITSM 1800A ~ 3-M5 A1K2 （K2） K1 （A2） 1 110TAB 30MAX K2 3 2 2 K2 G2 K1 （A2） G1 1 A1K2 （K2） K1 （A2） G1 1 1 （A1） 21 PK PE PD KK Unit：A ■Maximum Ratings Ratings Symbol VRRM VRSM VDRM Symbol （ IT RMS） Item ＊Repetitive Peak Reverse Voltage ＊Non-Repetitive Peak Reverse Voltage ＊Non-Repetitive Peak Reverse Voltage Item ＊R.M.S. On-State Current ＊Surge On-State Current ＊I t 2 PK90GB40 PD90GB40 KK90GB40 PE90GB40 400 480 400 Conditions PK90GB80 PD90GB80 KK90GB80 PE90GB80 800 960 800 Ratings 90 140 1650/1800 15000 10 3 3 10 5 Unit V V V Unit A A A A2S W W A V V A/ s μ V ℃ ℃ N･ｍ （㎏f･B） g （ IT AV） ＊Average On-State Current Single phase, half wave, 180° conduction, Tc：88℃ Single phase, half wave, 180° conduction, Tc：88℃ 1 cycle, ／ 2 ITSM It 2 50Hz/60Hz, peak Value, non-repetitive Value for one cycle of surge current PGM （ PG AV） Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current ＊Isolation Breakdown Voltage (R.M.S.) ＊Operating Junction Temperature ＊Storage Temperature Mounting Torque Mass Mounting M6） （ Terminal（M5） Recommended Value 2.5-3.9（25-40） Recommended Value 1.5-2.5（15-25） IG＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝0.1A/ s Tj V／ dI μ A.C.1minute IFGM VFGM VRGM di／dt VISO Tj Tstg 200 2500 −40 to ＋125 −40 to ＋125 4.7（48） 2.7（28） 170 ■Electrical Characteristics Symbol IDRM IRRM VTM IGT／VGT VGD tgt dv／dt IH IL Item Repetitive Peak Off-State Current, max. ＊Repetitive Peak Reverse Current, max. ＊Peak On-State Voltage, max. Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Lutching Current, typ. Conditions at VDRM, single phase, half wave, Tj＝125℃ at VDRM, single phase, half wave, Tj＝125℃ On-State Current 270A, Tj＝125℃ Inst. measurement Tj＝25℃，IT＝1A，VD＝6V Tj＝125℃，VD＝1 2VDRM ／ IT＝90A，G＝100mA， ＝25℃， D＝1 2VDRM， G/dt＝0.1A/ s I Tj V／ dI μ Tj＝125℃, VD＝2 3VDRM, Exponential wave. ／ Tj＝25℃ Tj＝25℃ Junction to case Ratings 15 15 1.30 100/3 0.25 10 500 50 100 0.30 Unit mA mA V mA/V V μs V/ s μ mA mA ℃/W Rth j-c）＊Thermal Impedance, max. （ ＊mark：Thyristor and Diode part. No mark：Thyristor part 23 ２ １１ ０ Gate Characteristics Peak Forward Gate Voltage （10V） Av er ag e ２ １０ ０ ５ 125℃ 25℃ −30℃ Po we （ r Peak Gate Current （3A） ５ Ga te ） On-State Current （A） Gate Voltage （V） Pe Po ak G we a （ te r 10 W 3W ２ １１ ０ Maximum Gate Voltage that will not trigger any unit （0.25V） ２ ５ １２ ０ ２ ５ １３ ０ ２ Gate Current （mA） Allowable Case Temperature （℃） ２０ ０ Average On-State Current Vs Power Dissipation （Single phase half wave） Per one element １０ ５ θ ＝180゜ θ ＝120゜ θ ＝90゜ θ ＝60゜ θ ＝30゜ D.C. １０ ０ ５ ０ 360 。 : Conduction Angle ０ ２ ０４ ０ ６ ０ ８ １０ １０ １０ １０ １０ ２０ ００ ２ ４ ６ ８ ０ Average On-State Current （A） Transient Thermal Impedance θ （℃/W） j-c ２０ ００ Surge On-State Current Rating （Non-Repetitive） Per one element Ｔ = ５ start ｊ２ ℃ １０ ５０ 60Hz 50Hz １０ ００ ５０ ０ ０ １ ２ ５ １ ０ ２ ０ ５ ０ Time （cycles） ; PK(PD,PE,KK)90GB １3 ０ On-State Voltage max ５ ２ Tj＝125℃ ） １２ ０ ５ ２ １１ ０ ５ ５ ０５ ． １０ ． １５ ． ２０ ． ２５ ． ３０ ． On-State Voltage （V） １０ ４ １０ ２ １０ ０ ８ ０ ６ ０ ４ ０ ２ ０ Average On-State Current Vs Maximum Allowable Case Temperature （Single phase half wave） Per one element 2 Power Dissipation （W） 360 。 : Conduction Angle D.C. 2 θ ＝30゜ ＝180゜ θ ＝90゜ θ θ ＝60゜ θ ＝120゜ ０ ２ ０ ４ ０ ６ ０ ８ １０ １０ １０ １０ １０ ２０ ００ ２ ４ ６ ８ ０ Average On-State Current （A） Transient Thermal Impedance １０ ２ ０ ５ １１ ０ ０４ ． Surge On-State Current （A） ０３ ． Junction to case Per one element ０２ ． ０１ ． １０ ０ ０ ２ ０ ５ １ -３ ２ ５ １ -２ ２ ０ Time t sec） （ ５ １ -１ ２ ０ ５ １０ ０ Allowable Case Temperature （℃） Total Power Dissipation （W） Id Ar.m.s.） （ W3 B6 Rth:0.8℃/W Rth:0.4℃/W Rth:0.3℃/W Rth:0.2℃/W Rth:0.1℃/W Total Power Dissipation （W） ６０ ０ ６０ ０ Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W Id Aav.） （ １０ ０ 4０ ５ B2 4０ ５ ３０ ０ Id Id Aav.） （ ３０ ０ W1 １０ ０ １０ １ Id Ar.m.s.） （ １０ １ ９ ０ １０ ０ １０ １ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５０５０２ 1０ ５ １０ ５ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５ ０５０２ １０ ２ １５ ２ ０ ２ ５ ７ １０ １５ ５０５０２ ０ ５ １ ０ １ ０２ ０２ ０ ３ ０ ００ ５ ０ ５ ０ ０ Output Current （A） Ambient Temperature （℃） Ambient Temperature （℃） Ambient Temperature （℃） Allowable Case Temperature （℃） ７０ ５ Output Current W１ Bidirectional connection ； B２ ；Two Pluse bridge connection B６ Six pulse bridge connection ； Ｗ３ Three phase ； bidiretional connection 24