SBA500AA80

THYRISTOR MODULE SBA500AA UL;E76102 M） （ Power Thyristor Module SBA500AA series are designed for high power rectifier control applications. Two independent thyristor elements in a electrically isolated package enable you to achieve flexible design, especially for AC switch application, idial terminal location for bus bar connection helps both your mechanical design and mounting procedure be more efficient. SBA series for two thyristors with blocking voltage up to 1600V are available. Isolated mounting base ● IT AV）500A, IT RMS）785A （ （ ● di/dt 200 A/μs ● dv/dt 500V/μs （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches Internal Configurations A1 K2 138max 60±0.2 60±0.2 K1 A2 4 2 5 7 K1 6φ6.5 78max 60±0.2 13.5 13.5 3 1 6 8 K2 G1 A1 28±1 60±1 K2 28±1 4-M4 depth8㎜ 4-M8 depth15㎜ K1 A2 47±1 K1 G1 G2 K2 66max Unit：A ■Maximum Ratings Symbol VDRM VRSM VRRM Symbol （ IT AV） （ IT RMS） Item Repetitive Peak Off-State Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Item Average On-State Current R.M.S. On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Forward） （ Peak Gate Voltage Reverse） （ Critical Rate of Rise of On-State Current Isolation Breakdown Voltage（R.M.S.） Operating Junction Temperature Storage Temperature Mounting（M6） Mounting Torque Terminal（M8） Terminal（M4） Mass SBA500AA40 400 480 400 Ratings SBA500AA80 SBA500AA120 800 1200 960 1350 800 1200 31 8 48±1 SBA500AA160 1600 1700 1600 Ratings 500 785 9.1/10.0 416 15 5 5 10 5 Unit V V V Unit A A kA kA2S W W A V V A/ s μ V ℃ ℃ N･ｍ (㎏f･B) N･ｍ (㎏f･B) N･ｍ (㎏f･B) g Unit mA mA V mA V V V/ s μ ℃/W Conditions Single phase, half wave, 180° conduction, Tc：66℃ Single phase, half wave, 180° conduction, Tc：66℃ 1 cycle, ／ 2 ITSM I2t PGM （ PG AV） 50Hz/60Hz, peak Value, non-reqetitive Value for one cycle of surge current IFGM VFGM VRGM di/dt VISO Tj Tstg IG＝200mA， D＝1 2VDRM， G/dt＝0.2A/ s V ／ dI μ A.C. 1 minute 200 2500 −40 to ＋125 −40 to ＋125 Recommended Value 2.5-3.9 (Recommended Value 25-40) Recommended Value 8.8-10 (Recommended Value 90-105) Recommended Value 1.0-1.4 Recommended Value 10-14) Typical Value 4.7 (48) 11.0 (115) 1.5 (15) 1100 ■Electrical Characteristics Symbol IDRM IRRM VTM IGT VGT VGD Item Repetitive Peak Off-State Current, max. Repetitive Peak Reverse Current, max. Peak On-State Voltage, max. Gate Trigger Current, max. Gate Trigger Voltage, max. Non-Trigger Gate, Voltage. min. Conditions at VDRM, Single phase, half wave, Tj＝125℃ at VDRM, Single phase, half wave, Tj＝125℃ IT=1500A VD＝6V，IT＝1A VD＝6V，IT＝1A Tj＝125℃，VD＝1 2VDRM ／ Tj＝125℃，VD＝2 3VDRM，exp, ／ Junction to case waveform Ratings 150 150 1.45 200 3 0.25 500 0.085 Critical Rate of Rise of Off-State Voltage, min. dv/dt Rth j-c） Thermal Impedance, max. （ SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com SBA500AA １０ ０ ５ ０ Gate Characteristics １００ ００ On-State Characteristics Gate Voltage （V） ２ ０ １ ０ ５ ２ １ ０５ ． ０２ ． ０１ ． １ ０ ２ ０ 125℃ Maximum Gate Non-Trigger Voltage Peak Forward Gate Voltag （10V） Peak Peak Gate Current （5A） 25℃ −40℃ Pe ak Ga te Po Av we era （ r ge 15 Ga W te ） Po we （5 r W） On-State Current （A） ５０ ００ ２０ ００ Ｔ= ５ ｊ２ ℃ １０ ００ ５０ ０ Maximum ２０ ０ １０ ０ ０５ ． １ １５ ． ２ ２５ ． ０ ５ １０ ２０ ００ ５０ １０ ２０ ０ ００ ００ ５０ １００ ００ ００ Gate Current （mA） On-State Voltage （V） Per one element Allowable Case Temperature （℃） １０ ２０ Average On-State Current Vs Power Dissipation （Single phase half wave） １０ ３ １０ ２ １０ １ １０ ０ ９ ０ ８ ０ ７ ０ ６ ０ ５ ０ Average On-State Current Vs Maximum Allowable Case Temperature （Single phase half wave） Per one element Power Dissipation （W） １０ ００ ８０ ０ １０ ８゜ DC ６０ ０ ６゜ ０ １０ ２゜ ９゜ ０ 0 π θ 360゜ ２ π θ：Conduction Angle ４０ ０ ２０ ０ ０ ０ ３゜ ０ 0 θ π 360゜ ２ π θ：Conduction Angle ３゜ ０ ６ ゜ ９ ゜ １０ １０ ０ ０ ２゜ ８゜ DC １０ ０ ２０ ０ ３０ ０ ４０ ０ ５０ ６０ ０ ０ ７０ ０ ８０ ０ ４ ０ ０ １０ ２０ ３０ ４０ ５０ ６０ ７０ ８０ ９０ ０ ０ ０ ０ ０ ０ ０ ０ ０ Average On-State Current （A） Transient Thermal Impedance θ （℃/W） j-c Average On-State Current （A） １００ ２０ Surge On-State Current Rating （Non-Repetitive） Per one element Tj＝25℃ start ０１ ． Transient Thermal Impedance Per one element Surge On-State Current （A） １００ ００ ８０ ００ ６０ ００ ４０ ００ 50Hz ００ ． ８ ００ ． ６ Junction to Case 60Hz ００ ． ４ ２０ ００ ０ １ ００ ． ２ ０ -３ １ ０ ２ ５ １ ０ ２ ０ ５ ０ １０ ０ １ -２ ０ １ -１ ０ Time （cycles） Time t sec） （ １０ ０ １１ ０ １２ ０