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SMG05C60

SMG05C60

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    SMG05C60 - THYRISTOR(Through Hole) - SanRex Corporation

  • 数据手册
  • 价格&库存
SMG05C60 数据手册
THYRISTOR( Through Hole) SMG05C60 Thyristor SMG05C60 is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. Typical Applications ● ● ( Sensitive Gate) 5.0±0.2 4.0±0.2 TO-92 13.5±0.5 Features 0.45+0.2 - 0.1 2.0MAX Home Appliances : Electric Blankets, Starter for FL, other control applications Industrial Use : SMPS, Solenoid for Breakers, Motor Controls, Heater Controls, other control applications 5.0±0.2 2.3±0.2 3 1 0.45+0.2 - 0.1 IT(AV)=0.5A High Surge Current ● Low Voltage Drop ● ● 2 1 Gate 2A 3K 2.50+0.6 - 0.2 1 2 3 2.50+0.6 - 0.2 Identifying Code:S05C6 Unit:mm ■Maximum Ratings Symbol VRRM VRSM VDRM IT AV) ( IT RMS) ( ITSM I2t PGM ( PG AV) (Tj=25℃ unless otherwise specified) Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Average On-State Current R.M.S. On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Forward) ( Peak Gate Voltage Reverse) ( Operating Junction Temperature Storage Temperature Mass Reference Ratings 600 720 600 Unit V V V A A A A2S W W A V V ℃ ℃ g Single phase, half wave, 180°conduction, Ta=39℃ , Single phase, half wave, 180°conduction, Ta=39℃ , 50/60Hz, 1 / 2 0.5 0.78 18/20 1.65 0.5 0.1 0.3 6 6 −40∼+125 −40∼+150 0.2 cycle Peak value, non-repetitive IFGM VFGM VRGM Tj Tstg ■Electrical Characteristics Symbol IDRM IRRM VTM IGT VGT VGD IH ( Rth j-a) Item Repetitive Peak Off-State Current Repetitive Peak Reverse Current Peak On-State Voltage Gate Trigger Current Gate Trigger Voltage Non-Trigger Gate Voltage Holding Current Thermal Resistance Reference Tj=125℃, VD=VDRM, RGK=1kΩ Tj=125℃, VR=VRRM, RGK=1kΩ IT=1.5A, Inst. measurement VD=6V, RL=100Ω Tj=125℃, VD=1 2VDRM, RGK=1kΩ / Junction to ambient Ratings Min. Typ. Max. 0.5 0.5 1.2 100 0.8 0.2 300 150 Unit mA mA V μA V V μA ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com SMG05C60 1 0 Gate Characteristics VFGM (6V) 1 0 On-State Voltage (MAX) T= 5 j2 ℃ T= 2 ℃ j1 5 PG (0.1W) (AV) On-State Current A) ( PGM (0.5W) Gate Voltage (V) 1 IFGM (0.3A) 1 25℃ VGD 0.2V) ( 01 . 0.0 1 0. 1 1 1 0 100 1000 01 . 0 05 . 1 15 . 2 25 . 3 35 . Gate Current mA) ( On-State Voltage (V) 05 . Average On-State Current vs Power Dissipation (Single phase half wave) θ1 0 =8゜ θ1 0 =2゜ θ9 ゜ =0 10 3 Average On-State Current vs Ambient Temperature (Single phase half wave) 0 π θ 30 6゜ 2π 04 . θ6 ゜ =0 θ3 ゜ =0 Ambient Temperature (℃) 10 2 10 1 10 0 9 0 8 0 7 0 6 0 5 0 4 0 3 0 0 θ3 ゜ =0 Power Dissipation (W) θ Conduction Angle : 03 . 02 . 0 π θ 30 6゜ 2π 01 . 0 0 θ Conduction Angle : θ 6 ゜ θ9 ゜ θ 1 0 =0 =0 = 2 ゜ θ1 0 =8゜ 00 01 01 02 02 03 03 04 04 .5 . .5 . .5 . .5 . .5 01 . 02 . 03 . 04 . 05 . 06 . Average On-State Current (A) Average On-State Current (A) Transient Thermal Impedance (℃/W) 10 4 Surge On-State Current Rating (Non-Repetitive) 10 00 Maximum Transient Thermal Impedance Characteristics Surge On-State Current A) ( 10 2 10 0 8 0 6 0 4 0 2 0 0 1 1 0 10 0 6 Hz 0 5 Hz 0 10 0 1 0 1 00 1 .0 00 .1 01 . 1 1 0 10 0 10 00 Time (Cycles) Time (sec.) 10 00 IGT −Tj [Change Rate] (Typical) Gate Trigger Voltage (V) −25 0 2 5 50 75 100 125 1 09 . VGT −Tj (Typical) IGT (t℃) ×100 (%) IGT 2 ℃) (5 08 . 07 . 06 . 05 . 04 . 03 . 02 . 01 . 0 −50 −25 0 25 50 75 100 1 25 10 0 1 0 −50 Junction Temp. (℃) Junction Temp. (℃) SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com SMG05C60 150 140 VD −Tj Change Rate (Typical) RGK=1kΩ 10 2 VD−RGK Change Rate] [ (Typical) Tj= 2 ℃ 15 VD t℃) ( ×100 (%) VD 2 ℃) (5 130 120 110 100 90 80 70 60 50 −0 5 −5 2 0 2 5 5 0 7 5 10 0 15 2 VD RGK=rkΩ) ( ×100 (%) VD RGK=1 ( kΩ) 10 0 8 0 6 0 4 0 2 0 0 1 1 0 10 0 Junction Temp. (℃) Gate-Cathode Resistance (kΩ) 10 00 IH−RGK Change Rate] [ (Typical) T= 5 j2 ℃ 150 140 130 120 110 100 90 80 70 60 VR −Tj Change Rate (Typical) IH RGK=rkΩ) ( ×100 (%) IH RGK=1 ( kΩ) 10 0 1 0 01 . V(t℃) R ×100 (%) V(25℃) R 1 1 0 10 0 50 −0 5 −5 2 0 2 5 5 0 7 5 10 0 15 2 Gate-Cathode Resistance (kΩ) Junction Temp. (℃) SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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