THYRISTOR( Surface Mount Device/Non-isolated)
SMG2D60D
Thyristor SMG2D60D is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation.
Typical Applications
0.70 0.20 ± 6.60 0.20 ± 5.34 0.30 ± TC POINT
2
( Sensitive Gate)
TO-252
(5.34) (0.9)
6.10 0.20 ±
0.80 0.20 ±
MIN 1.40 TYP 1.90
IT(AV)=2A ● High Surge Current ● Low Voltage Drop ● Lead-Free Package
●
2.70 0.20 ±
Features
1
2
3
MIN 0.55
Home Appliances : Electric Blankets, Starter for FL, other control applications ● Industrial Use : SMPS, Solenoid for Breakers, Motor Controls, Heater Controls, other control applications
●
2
1 3
0.96 0.20 ± 0.76 0.20 ± 2.30 0.20 ±
0.50 0.10 ± 1.02 0.20 ± 2.30 0.20 ±
2.30 0.20 ±
2
1K 2A 3 Gate
Identifying Code:S2D6D
Unit:mm
■Maximum Ratings
Symbol VRRM VRSM VDRM IT AV) ( IT RMS) ( ITSM I2t PGM
( PG AV)
(Tj=25℃ unless otherwise specified)
Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Average On-State Current R.M.S. On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Forward) ( Peak Gate Voltage Reverse) ( Operating Junction Temperature Storage Temperature Mass
Reference
Ratings 600 720 600
(0.65) (0.90)
Unit V V V A A A A2S W W A V V ℃ ℃ g
Single phase, half wave, 180°conduction, Tc=108℃ , Single phase, half wave, 180°conduction, Tc=108℃ , 50Hz/60Hz,
1 / 2
2 3.1 30/33 4.5 0.5 0.1 0.3 6 6 −40∼+125 −40∼+150 0.32
cycle Peak value, non-repetitive
IFGM VFGM VRGM Tj Tstg
■Electrical Characteristics
Symbol IDRM IRRM VTM IGT VGT VGD IH
( Rth j-c)
Item Repetitive Peak Off-State Current Repetitive Peak Reverse Current Peak On-State Voltage Gate Trigger Current Gate Trigger Voltage Non-Trigger Gate Voltage Holding Current Thermal Resistance
Reference Tj=125℃, VD=VDRM, RGK=220Ω Tj=125℃, VR=VRRM, RGK=220Ω IT=6A, Inst. measurement VD=6V, RL=10Ω Tj=125℃, VD=1 2VDRM, RGK=220kΩ / RGK=220Ω Junction to case
Ratings Min. Typ. Max. 1 1 1.5 1 0.1 3.5 5.8 200 0.8
Unit mA mA V μA V V mA ℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
(5.21)
2.30 0.10 ± 0.50 0.10 ±
SMG2D60D
1 0
Gate Characteristics
VFGM 6 ( V) PGM (0.5W)
100
On-State Voltage (MAX)
T= 5 j2 ℃ T= 2 ℃ j1 5
On-State Current A) (
Gate Voltage (V)
2℃ 5
01 .
VGD 0 ( .1V)
IFGM (0.3A)
1
PG ( .1W) (AV) 0
1 0
1
00 .1 00 .1
01 .
1
1 0
10 0
10 00
01 . 0.5
1
1.5
2
2.5
3
3.5
4
Gate Current mA) (
On-State Voltage (V)
Allowable Case Temperature (℃)
Average On-State Current vs Power Dissipation (Single phase half wave) 3.5
Power Dissipation (W)
3 2.5 2 1.5 1 0.5 0 0 0 .5 1 1.5 2
θ =30゜ θ=150゜ θ=120゜ θ =90゜ θ =60゜ θ=180゜
130 125 120 115 110 105 100 95
Average On-State Current vs Allowable Case Temperature (Single phase half wave)
0 θ 30 6゜ π 2π
θ Conduction Angle :
0 θ
π
2π
θ θ =30゜ θ =60゜ θ =90゜ θ =120゜ =150゜
θ =180゜
30 6゜
θ Conduction Angle :
2.5
90 0
0.5
1
1.5
2
2.5
Average On-State Current A) (
Average On-State Current A) (
30 25 20 15 10 5 0 1 1 0 10 0
60HZ
50HZ
Transient Thermal Impedance (℃/W)
35
Surge On-State Current Rating (Non-Repetitive)
1 0
Maximum Transient Thermal Impedance Characteristics
Surge On-State Current A) (
Time (Cycles)
1 00 .1
01 .
1
1 0
10 0
Time (Sec.)
Gate Trigger Voltage (V)
10 00
IGT −Tj Change Rate (Typical)
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VGT −Tj (Typical)
IGT (t℃) ×100 (%) IGT 2 ℃) (5
10 0
1 0
1 −0 5
−5 2
0
2 5
5 0
7 5
10 0
15 2
0 −0 5
−5 2
0
2 5
5 0
7 5
10 0
15 2
Junction Temp.(℃)
Junction Temp. (℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
SMG2D60D
150 140
VD −Tj Change Rate (Typical)
150 140
VR −Tj Change Rate (Typical)
VD t℃) ( ×100 (%) VD 2 ℃) (5
V(t℃) R ×100 (%) V(25℃) R
−5 2 0 2 5 5 0 7 5 10 0 15 2
130 120 110 100 90 80 70 60 50 −0 5
130 120 110 100 90 80 70 60 50 −0 5 −5 2 0 2 5 5 0 7 5 10 0 15 2
Junction Temp. (℃)
Junction Temp. (℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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