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TMG10CQ60H

TMG10CQ60H

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    TMG10CQ60H - TRIAC(Surface Mount Device/Non-isolated) - SanRex Corporation

  • 数据手册
  • 价格&库存
TMG10CQ60H 数据手册
TRIAC(Surface Mount Device / Non-isolated) TMG10CQ60H Triac TMG10CQ60H is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. Typical Applications (Tj=150℃) TO-263 (7.0) (0.9) (4.0) 10.4 0.3 ± 9.2 0.3 ± 1.4 0.5 ± 2.36 0.15 ± Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro Wave Ovens, Hair Dryers, other control applications ● Industrial Use : SMPS, Copier Machines, Motor Controls, Dimmer, SSR, Heater Controls, Vending Machines, other control applications ● 10 0.3 ± (0.4) (6.91) 2 4.5 0.2 ± 1.3 0.2 ± ( RO 2× .4 5) 2 1 2 3 1 2.4 0.2 ± Features 4.9 0.5 ± 3 1.27 0.2 ± IT(RMS)=10A ● High Surge Current ● Low Voltage Drop ● Lead-Free Package ● 2.54 0.15 ± 0.8 0.15 ± 2.54 0.25 ± 5.08 0.5 ± 0.5 0.15 ± 2.5 0.2 ± 2 1 T1 2 T2 3 Gate Identifying Code:T10CQ6H Unit:mm ■Maximum Ratings Symbol VDRM ( IT RMS) ITSM I2t PGM ( PG AV) IGM VGM Tj Tstg Item Repetitive Peak Off-State Voltage R.M.S. On-State Current Surge On-State Current I2t(for fusing) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Reference (Tj=25℃ unless otherwise specified) Tc=128℃ One cycle, 50Hz/60Hz, Peak value non-repetitive Ratings 600 10 100/110 50 5 0.5 2 10 −40∼+150 −40∼+150 1.2 Unit V A A A2S W W A V ℃ ℃ g ■Electrical Characteristics Symbol IDRM VTM + I GT1 − I GT1 + I GT3 − I GT3 + V GT1 − V GT1 + V GT3 − V GT3 VGD 〔dv/dt〕 c IH Rth Item Repetitive Peak Off-State Current Peak On-State Voltage 1 2 Gate Trigger Current 3 4 1 2 Gate Trigger Voltage 3 4 Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Reference VD=VDRM, Single phase, half wave, Tj=150℃ IT=15A, Inst. measurement Min. VD=6V,RL=10Ω Ratings Typ. Max. 2 1.4 30 30 ― 30 1.5 1.5 ― 1.5 Unit mA V mA V Tj=150℃,VD=1 2VDRM / Tj=150℃, di/dt〕=−5A/ms,VD=2 3VDRM 〔 c / Junction to case 0.1 5 20 1.8 V V/ s μ mA ℃/W Holding Current Thermal Resistance Trigger mode of the triac Mode 1 I ( + ) Mode 2 I ) ( − Mode 3 III ( + ) Mode 4 III ) ( − SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com (7.2) TMG10CQ60H 10 0 Gate Characteristics On-State Peak Current A) ( On-State Characteristics MAX) ( 10 00 T= 5 j2 ℃ T= 5 ℃ j1 0 Gate Voltage (V) 1 0 VGM (10V) PGM (5W) 10 0 25℃ 1+GT1 1−GT1 1−GT3 VGD 0.1V) ( 01 . IGM (2A) 1 PG (0.5W) (AV) 1 0 1 00 . 1 1 0 10 0 10 00 100 00 01 . 0 05 . 1 15 . 2 25 . 3 3. 5 4 Gate Current mA) ( On-State Voltage (V) Power Dissipation (W) 1 2 1 0 8 6 4 2 0 0 0 θ π θ 2π θ 180゜ = θ 150゜ = θ 120゜ = = θ 90゜ = θ 60゜ θ 30゜ = 30 6゜ θ Conduction Angle : Allowable Case Temperature (℃) 1 4 RMS On-State Current vs Maximum Power Dissipation 10 5 15 4 10 4 15 3 10 3 15 2 RMS On-State vs Allowable Case Temperature θ =30゜ θ =60゜ θ =90゜ 0 θ 30 6゜ π θ 2π θ =120゜ θ =150゜ θ =180゜ θ Conduction Angle : 2 4 6 8 1 0 10 2 0 2 4 6 8 1 0 RMS On-State Current (A) RMS On-State Current (A) Transient Thermal Impedance (℃/W) 10 2 Surge On-State Current Rating (Non-Repetitive) 1 0 Transient Thermal Impedance Surge On-State Current A) ( 10 0 8 0 6 0 5 HZ 0 6 HZ 0 1 4 0 2 0 0 1 2 5 1 0 2 0 5 0 10 0 01 . 00 .1 01 . 1 1 0 10 0 Time (Cycles) Time (Sec.) IGT −Tj (Typical) 10 00 10 00 VGT −Tj (Typical) IGT (t℃) ×100 (%) IGT 2 ℃) (5 VGT (t℃) ×100 (%) VGT 2 ℃) (5 V+GT1 !+) ( V−GT1 !−) ( V−GT3 #−) ( 10 0 I+GT1 !+) ( I−GT1 !−) ( 10 0 I−GT3 #−) ( 1 0 −0 5 −5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 1 0 −0 5 −5 2 0 2 5 5 0 7 5 10 15 0 2 10 5 Junction Temp. Tj (℃) Junction Temp. Tj (℃) SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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