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TMG10D80H

TMG10D80H

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    TMG10D80H - TRIAC(Surface Mount Device/Non-isolated) - SanRex Corporation

  • 数据手册
  • 价格&库存
TMG10D80H 数据手册
TRIAC(Surface Mount Device / Non-isolated) TMG10D80H Triac TMG10D80H is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. Typical Applications ( Sensitive Gate) TO-263 (7.0) (0.9) (4.0) 10.4 0.3 ± 9.2 0.3 ± 1.4 0.5 ± 2.36 0.15 ± Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro Wave Ovens, Hair Dryers, other control applications ● Industrial Use : SMPS, Copier Machines, Motor Controls, Dimmer, SSR, Heater Controls, Vending Machines, other control applications ● 10 0.3 ± (0.4) (6.91) 2 4.5 0.2 ± 1.3 0.2 ± ( RO 2× .4 5) 2 1 2 3 1 2.4 0.2 ± Features 4.9 0.5 ± 3 1.27 0.2 ± IT(RMS)=10A ● High Surge Current ● Low Voltage Drop ● Lead-Free Package ● 2.54 0.15 ± 0.8 0.15 ± 2.54 0.25 ± 5.08 0.5 ± 0.5 0.15 ± 2.5 0.2 ± 2 1 T1 2 T2 3 Gate Identifying Code:T10D8H Unit:mm ■Maximum Ratings Symbol VDRM ( IT RMS) ITSM I2t PGM ( PG AV) IGM VGM Tj Tstg Item Repetitive Peak Off-State Voltage R.M.S. On-State Current Surge On-State Current I2t(for fusing) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Reference (Tj=25℃ unless otherwise specified) Tc=103℃ One cycle, 50Hz/60Hz, Peak value non-repetitive Ratings 800 10 100/110 50 5 0.5 2 10 −40∼+125 −40∼+150 1.2 Unit V A A A2S W W A V ℃ ℃ g ■Electrical Characteristics Symbol IDRM VTM + I GT1 − I GT1 + I GT3 − I GT3 + V GT1 − V GT1 + V GT3 − V GT3 VGD 〔dv/dt〕 c IH Rth Item Repetitive Peak Off-State Current Peak On-State Voltage 1 2 Gate Trigger Current 3 4 1 2 Gate Trigger Voltage 3 4 Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Reference VD=VDRM, Single phase, half wave, Tj=125℃ IT=15A, Inst. measurement Min. VD=6V,RL=10Ω Ratings Typ. Max. 2 1.4 10 10 ― 10 1.5 1.5 ― 1.5 Unit mA V mA V Tj=125℃,VD=1 2VDRM / Tj=125℃, di/dt〕=−5A/ms,VD=400V 〔 c Junction to case 0.2 10 20 1.8 V V/ s μ mA ℃/W Holding Current Thermal Resistance Trigger mode of the triac Mode 1 I ( + ) Mode 2 I ) ( − Mode 3 III ( + ) Mode 4 III ) ( − SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com (7.2) TMG10D80H 100 Gate Characteristics 20 0 10 0 On-State Characteristics MAX) ( On-State Peak Current A) ( 5 0 2 0 1 0 5 2 1 05 . 02 . 05 . 10 . 15 . 20 . 25 . T= 5 j2 ℃ T= 2 ℃ j1 5 Gate Voltage (V) 1 0 VGM (10V) PGM (5W) PG (0.5W) (AV) 1 25℃ I+GT1 I-GT1 I-GT3 01 . 1 VGD 0.2V) ( IGM (2A) 1 0 100 1000 10000 30 . 35 . Gate Current mA) ( On-State Voltage (V) Power Dissipation (W) 1 2 1 0 8 6 4 2 0 0 1 0 θ π θ 2π θ1 0 =8゜ θ1 0 =5゜ θ1 0 =2゜ θ9 ゜ =0 θ6 ゜ =0 θ3 ゜ =0 30 6゜ θ Conduction Angle : Allowable Case Temperature (℃) 1 4 RMS On-State Current vs Maximum Power Dissipation 15 2 10 2 15 1 10 1 RMS On-State vs Allowable Case Temperature θ =30゜ θ =60゜ 0 θ 30 6゜ π θ 2π θ =90゜ θ =120゜ θ =150゜ θ =180゜ 15 0 θ Conduction Angle : 2 3 4 5 6 7 8 9 11 01 10 0 0 2 4 6 8 1 0 RMS On-State Current (A) RMS On-State Current (A) Transient Thermal Impedance (℃/W) 10 2 Surge On-State Current Rating (Non-Repetitive) 1 0 Transient Thermal Impedance Surge On-State Current A) ( 10 0 8 0 6 0 5 HZ 0 6 HZ 0 1 4 0 2 0 0 1 2 5 1 0 2 0 5 0 10 0 01 . 00 .1 01 . 1 1 0 10 0 Time (Cycles) Time (Sec.) 10 00 50 0 20 0 10 0 5 0 IGT − Tj (Typical) 10 00 50 0 20 0 10 0 5 0 2 0 VGT − Tj (Typical) IGT (t℃) ×100 (%) (5 IGT 2 ℃) VGT (t℃) ×100 (%) VGT 2 ℃) (5 V+GT1 1+) ( ( V−GT1 1−) V−GT3 3−) ( I+GT1 1+) ( I − GT 1 (1 ) − I−GT3 3−) ( 2 0 1 0 −0 5 0 5 0 10 0 10 5 1 0 −0 5 0 5 0 10 0 10 5 Junction Temp. Tj (℃) Junction Temp. Tj (℃) SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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