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TMG5C60H

TMG5C60H

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    TMG5C60H - TRIAC(Surface Mount Device/Non-isolated) - SanRex Corporation

  • 数据手册
  • 价格&库存
TMG5C60H 数据手册
TRIAC( Surface Mount Device / Non-isolated) TMG5C60H Triac TMG5C60H is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. Typical Applications (0.9) TO-263 (7.0) (4.0) 10.4 0.3 ± 9.2 0.3 ± 1.4 0.5 ± 2.36 0.15 ± Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro Wave Ovens, Hair Dryers, other control applications ● Industrial Use : SMPS, Copier Machines, Motor Controls, Dimmer, SSR, Heater Controls, Vending Machines, other control applications ● 10 0.3 ± (0.4) (6.91) 2 4.5 0.2 ± 1.3 0.2 ± ( RO 2× .4 5) 2 1 2 3 1 2.4 0.2 ± Features 4.9 0.5 ± 3 1.27 0.2 ± IT(RMS)=5A ● High Surge Current ● Low Voltage Drop ● Lead-Free Package ● 2.54 0.15 ± 0.8 0.15 ± 2.54 0.25 ± 5.08 0.5 ± 0.5 0.15 ± 2.5 0.2 ± 2 1 T1 2 T2 3 Gate Identifying Code:T5C6H Unit:mm ■Maximum Ratings Symbol VDRM ( IT RMS) (Tj=25℃ unless otherwise specified) Item Repetitive Peak Off-State Voltage R.M.S. On-State Current Surge On-State Current I t(for fusing) 2 Reference Tc=107℃ One cycle, 50Hz/60Hz, Peak value non-repetitive Ratings 600 5 50/55 12.6 3 0.3 2 10 −40∼+125 −40∼+150 1.2 Unit V A A A2S W W A V ℃ ℃ g ITSM It 2 PGM ( PG AV) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass IGM VGM Tj Tstg ■Electrical Characteristics Symbol IDRM VTM + I GT1 − I GT1 + I GT3 − I GT3 + V GT1 − V GT1 + V GT3 − V GT3 Item Repetitive Peak Off-State Current Peak On-State Voltage 1 2 3 4 1 2 3 4 Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Reference VD=VDRM, Single phase, half wave, Tj=125℃ IT=7A, Inst. measurement Ratings Min. Typ. Max. 1 1.4 20 20 20 1.5 1.5 1.5 Unit mA V Gate Trigger Current VD=6V,RL=10Ω Gate Trigger Voltage mA V VGD 〔dv/dt〕 c IH Tj=125℃,VD=1 2VDRM / Tj=125℃, di/dt〕=−2.5A/ms,VD=2 3VDRM 〔 c / Junction to case 0.2 5 10 3.0 V V/ s μ mA ℃/W Holding Current Rth j-c) Thermal Resistance ( Trigger mode of the triac Mode 1 I ( + ) Mode 2 I ) ( − Mode 3 III ( + ) Mode 4 III ) ( − SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com (7.2) TMG5C60H 10 0 Gate Characteristics 10 0 On-State Characteristics MAX) ( On-State Peak Current A) ( 5 0 2 0 1 0 5 2 1 05 . 02 . 05 . 10 . 15 . 20 . 25 . T= 5 j2 ℃ T= 2 ℃ j1 5 Gate Voltage (V) 1 0 VGM (10V) PGM (3W) PG (0.3W) (AV) 1 25℃ 1+GT1 1−GT1 1−GT3 VGD 0.2V) ( 01 . 1 0 IGM (2A) 10 0 10 00 100 00 30 . 35 . Gate Current mA) ( On-State Voltage (V) Power Dissipation (W) 6 5 4 3 2 1 0 0 0 θ π θ 2π θ1 0 =8゜ θ1 0 =5゜ θ1 0 =2゜ θ9 ゜ =0 θ6 ゜ =0 θ3 ゜ =0 30 6゜ θ Conduction Angle : Allowable Case Temperature (℃) 7 RMS On-State Current vs Maximum Power Dissipation 15 2 RMS On-State vs Allowable Case Temperature 10 2 θ =30゜ θ =60゜ 0 θ 30 6゜ π θ 2π 15 1 θ =90゜ θ =120゜ θ =150゜ θ =180゜ 10 1 θ Conduction Angle : 1 2 3 4 5 6 15 0 0 1 2 3 4 5 RMS On-State Current (A) RMS On-State Current (A) Transient Thermal Impedance (℃/W) 6 0 Surge On-State Current Rating (Non-Repetitive) 1 0 Transient Thermal Impedance Surge On-State Current A) ( 5 0 4 0 3 0 5 HZ 0 6 HZ 0 2 0 1 0 0 1 2 5 1 0 2 0 5 0 10 0 1 00 .1 01 . 1 1 0 10 0 Time (Cycles) Time (Sec.) IGT −Tj (Typical) 10 00 50 0 20 0 10 0 5 0 I−GT3 3−) ( I+GT1 1+) ( I−GT1 1−) ( 10 00 50 0 VGT −Tj (Typical) IGT (t℃) ×100 (%) IGT 2 ℃) (5 VGT (t℃) ×100 (%) VGT 2 ℃) (5 20 0 V−GT3 3−) ( V+GT1 1+) ( V−GT1 1−) ( 10 0 5 0 2 0 1 0 −0 5 2 0 1 0 −0 5 0 5 0 10 0 10 5 0 5 0 10 0 10 5 Junction Temp. Tj (℃) Junction Temp. Tj (℃) SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
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