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15C02SS

15C02SS

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    15C02SS - Low-Frequency General-Purpose Amplifier Applications - Sanyo Semicon Device

  • 数据手册
  • 价格&库存
15C02SS 数据手册
Ordering number : ENN7357A 15C02SS NPN Epitaxial Planar Silicon Transistor 15C02SS Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2159A [15C02SS] Top View 1.4 0.3 Low-frequency amplifer, high-speed switching, small motor drive. Features • • Side View 0.1 • • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=300mΩ[IC=1A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.25 3 0.8 0.3 1.4 1 0.45 0.2 2 Bottom View 0.07 0.07 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 2 1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 20 15 5 0.8 1.6 Unit V V V A A mW °C °C Mounted on a glass epoxy board (20!30!1.6mm) 200 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=50mA VCB=10V, f=1MHz IC=400mA, IB=20mA IC=400mA, IB=20mA 300 440 4 140 0.9 280 1.2 Conditions Ratings min typ max 100 100 800 MHz pF mV V Unit nA nA Marking : YK Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003 TS IM / 13003 TS IM TA-100136 No.7357-1/4 15C02SS Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Delay Time Storage Time Turn-OFF Delay Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Conditions Ratings min 20 15 5 30 165 25 typ max Unit V V V ns ns ns Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 220µF VBE= --5V + 470µF VCC=5V RB RL IC=20IB1= --20IB2=400mA 1000 IC -- VCE 20. 0m A mA 900 10 .0m A 7 .0mA 1200 IC -- VBE VCE=2V 5.0mA Collector Current, IC -- mA 700 600 500 400 300 200 100 0 0 3.0mA 2.0mA 1.5mA Collector Current, IC -- mA 800 1000 30.0 800 600 1.0mA 0.6mA 0.3mA IB=0 100 200 300 400 500 600 700 800 900 1000 400 200 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05038 Collector-to-Emitter Voltage, VCE -- mV 1000 IT05037 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC Ta=7 5°C 25°C --25°C VCE=2V 7 7 IC / IB=20 Ta=75°C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 100 7 5 3 2 DC Current Gain, hFE 5 25°C --25°C 3 C 5° C =7 Ta --25° 2 25 10 7 5 °C 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 IT05039 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 IT05042 No.7357-2/4 15C02SS 1000 7 VCE(sat) -- IC IC / IB=50 3 VBE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 2 100 7 5 3 2 1.0 Ta= --25°C 25°C °C 75 a= °C T 5 --2 25 2 3 5 7 10 2 3 7 75°C 5 °C 10 1.0 5 7 100 2 3 5 7 1000 IT05043 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 10 Collector Current, IC -- mA 1000 5 7 1000 IT05044 Cob -- VCB f=1MHz fT -- IC VCE=2V Gain-Bandwidth Product, fT -- MHz 2 3 5 7 2 3 Output Capacitance, Cob -- pF 7 7 5 5 3 3 2 2 100 7 1.0 1.0 1.0 10 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Base Voltage, VCB -- V 10 7 5 IT05041 250 Ron -- IB IN Collector Current, IC -- mA 5 7 1000 IT05040 PC -- Ta f=1MHz 1kΩ 1kΩ IB OUT Collector Dissipation, PC -- mW 200 M ON Resistance, Ron -- Ω 3 2 ou nte do 150 na gla ss 1.0 7 5 3 2 ep ox yb 100 oa rd (2 0! 3 0! 50 1.6 mm ) 0.1 0.1 0 2 3 5 7 1.0 2 3 5 Base Current, IB -- mA 10 IT06664 7 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT05045 No.7357-3/4 15C02SS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September 2003. Specifications and information herein are subject to change without notice. PS No.7357-4/4
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