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15GN01MA

15GN01MA

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    15GN01MA - VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applic...

  • 数据手册
  • 价格&库存
15GN01MA 数据手册
Ordering number : ENA1100 15GN01MA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15GN01MA Features • • VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Small ON-resistance [Ron=2Ω (IB=3mA)]. Small output capacitance [Cob=1.1pF (VCB=10V)]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg When mounted on ceramic substrate (250mm2✕0.8mm) Conditions Ratings 15 8 3 50 400 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Output ON resistance Symbol ICBO IEBO hFE fT Cob VCE(sat) Ron VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=10mA VCB=10V, f=1MHz IC=20mA, IB=2mA IB=3mA, f=10kHz 200 1.0 1.5 1.1 0.06 2.0 1.5 0.12 Conditions Ratings min typ max 0.5 0.5 400 GHz pF V Ω Unit μA μA Marking : ZA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 93009AB TK IM TC-00002115 No. A1100-1/5 15GN01MA Package Dimensions unit : mm (typ) 7023-009 0.425 0.3 0.15 3 1.25 2.1 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 50 45 IC -- VCE 0.30 mA 0.25mA 0.2 10 9 IC -- VCE 45μA 40μA 35μA Collector Current, IC -- mA 0.20mA 35 30 25 20 15 10 5 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Collector Current, IC -- mA 40 8 7 6 5 4 3 2 1 30μA 25μA 20μA 15μA 10μA 5μA IB=0μA 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.15mA 0.10mA 0.05mA IB=0mA 0.45 0.50 0 Collector-to-Emitter Voltage, VCE -- V 60 IT06246 7 IC -- VBE Collector-to-Emitter Voltage, VCE -- V IT06247 hFE -- IC VCE=5V 50 5 VCE=5V Collector Current, IC -- mA 40 DC Current Gain, hFE 3 30 20 2 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT06248 100 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA 7 100 IT05405 No. A1100-2/5 15GN01MA 5 f T -- IC VCE=5V 5 Cob -- VCB f=1MHz Gain-Bandwidth Product, f T -- GHz 3 Output Capacitance, Cob -- pF 3 2 2 1.0 7 5 1.0 7 3 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 5 100 IT05402 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Cre -- VCB Collector-to-Base Voltage, VCB -- V 2 IT05404 VCE(sat) -- IC f=1MHz Reverse Transfer Capacitance, Cre -- pF Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=10 3 0.1 7 5 2 3 1.0 2 7 5 0.1 0.01 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 10 9 10 IT06250 450 7 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Ron -- IB IN Collector Current, IC -- mA IT06249 PC -- Ta f=10kHz 1kΩ 400 When mounted on ceramic substrate (250mm2✕0.8mm) Collector Dissipation, PC -- mW 5 Output ON resistance, Ron -- Ω OUT 10kΩ IB 8 7 6 5 4 3 2 1 0.1 350 300 250 200 150 100 50 0 2 3 5 7 1.0 2 3 0 20 40 60 80 100 120 140 160 Base Current, IB -- mA IT05403 Ambient Temperature, Ta -- °C IT06251 No. A1100-3/5 15GN01MA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.662 0.582 0.529 0.487 0.459 0.429 0.409 0.388 0.374 0.365 ∠S11 --25.65 --36.72 --47.21 --56.61 --65.82 --74.14 --82.44 --89.94 --96.79 --103.28 ⏐S21⏐ 4.631 3.028 2.353 1.955 1.691 1.496 1.353 1.239 1.149 1.072 ∠S21 122.00 112.20 104.69 97.68 91.07 85.11 79.01 73.29 67.98 63.13 ⏐S12⏐ 0.028 0.051 0.071 0.088 0.103 0.116 0.128 0.138 0.148 0.156 ∠S12 71.36 68.80 65.59 63.00 60.43 57.83 56.22 54.76 53.44 52.60 ⏐S22⏐ 0.765 0.732 0.713 0.700 0.689 0.679 0.674 0.671 0.671 0.670 ∠S22 -10.50 -14.15 -17.91 -21.58 -25.23 -28.81 -32.38 -35.89 -39.34 -42.75 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.587 0.502 0.444 0.405 0.381 0.356 0.342 0.329 0.319 0.315 ∠S11 --31.65 --46.40 --59.47 --70.80 --81.80 --91.29 --101.15 --109.42 -116.99 --124.06 ⏐S21⏐ 6.647 4.239 3.227 2.616 2.217 1.922 1.715 1.544 1.414 1.305 ∠S21 118.78 108.57 100.32 93.18 86.64 80.82 74.86 69.40 64.16 59.41 ⏐S12⏐ 0.026 0.046 0.064 0.079 0.093 0.105 0.115 0.125 0.135 0.144 ∠S12 71.86 68.22 65.90 63.91 62.30 60.39 59.29 58.34 57.86 57.47 ⏐S22⏐ 0.694 0.653 0.630 0.619 0.607 0.598 0.596 0.593 0.594 0.593 ∠S22 --11.96 -15.76 -19.10 -22.50 -25.83 -29.19 -32.72 -36.10 -39.48 -42.80 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.505 0.417 0.369 0.341 0.328 0.316 0.311 0.306 0.304 0.306 ∠S11 --41.07 --60.49 --76.83 --90.31 --102.08 -112.57 --122.49 --130.50 --137.80 --144.30 ⏐S21⏐ 8.945 5.500 4.039 3.197 2.654 2.264 1.988 1.771 1.605 1.470 ∠S21 114.82 103.75 95.20 88.11 81.71 76.38 70.80 65.75 60.92 56.51 ⏐S12⏐ 0.023 0.042 0.056 0.070 0.082 0.094 0.104 0.115 0.125 0.135 ∠S12 71.42 69.03 67.39 66.22 65.43 64.49 64.03 63.95 64.09 64.16 ⏐S22⏐ 0.611 0.568 0.548 0.539 0.533 0.528 0.530 0.530 0.534 0.537 ∠S22 -13.64 -16.14 -18.89 -21.75 -24.77 -27.99 -31.32 -34.57 -37.93 -41.24 No. A1100-4/5 15GN01MA SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1100-5/5
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