2SA1179_08

Ordering number : EN3218B 2SA1179 / 2SC2812 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Features • • Low-Frequency General-Purpose Amplifier Applications Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --55 to +150 Unit V V V mA mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--)35V, IE=0A VEB=(-)4V, IC=0A VCE=(--)6V, IC=(-)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=-6V, IC=--10mA 135* 100 (180) Ratings min typ max (--)0.1 (--)0.1 600* MHz MHz Unit μA μA Marking: 2SA1179: M / 2SC2812: L *: The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws: Rank 5 6 7 hFE 135 to 270 200 to 400 300 to 600 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478 No.3218-1/5 2SA1179 / 2SC2812 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(-)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10μA, IC=0A (--)55 (--)50 (--)5 Ratings min typ (4.0)3.0 (--0.15)0.1 (-)0.5 (-)1.0 max Unit pF V V V V V Package Dimensions unit : mm (typ) 7013A-009 0.5 2.9 0.1 3 2.5 1.5 0.5 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.05 1.1 0.3 --16 IC -- VCE 2SA1179 Collector Current, IC -- mA 20 IC -- VCE 50μA 45μA 40μA 2SC2812 Collector Current, IC -- mA --12 --8 μA --50 A --45μ A --40μ A --35μ 30μA ---25μA --20μA --15μA --10μA 16 35μA 12 30μA 25μA 8 20μA 15μA 4 --4 --5μA 0 0 --10 --20 --30 10μA 5μA IB=0μA 40 50 IT12001 IB=0μA --40 --50 IT12000 0 0 10 20 30 Collector-to-Emitter Voltage, VCE -- V --240 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 240 IC -- VBE 2SA1179 VCE= --6V --200 200 2SC2812 VCE=6V Collector Current, IC -- mA Collector Current, IC -- mA --160 160 Ta=75 °C 25°C --25°C --120 120 --80 80 --40 40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT12002 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12003 Base-to-Emitter Voltage, VBE -- V Base-to-Emitter Voltage, VBE -- V Ta=75° C 25°C --25°C No.3218-2/5 2SA1179 / 2SC2812 2 hFE -- IC 2SA1179 VCE= --6V 3 2 hFE -- IC 2SC2812 VCE=6V 1000 DC Current Gain, hFE 7 5 DC Current Gain, hFE 1000 7 5 3 2 3 2 Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C 100 7 5 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 7--100 2 3 IT12004 100 7 5 0.1 23 5 1.0 23 5 10 23 5 23 100 IT12005 Collector Current, IC -- mA 1000 f T -- IC Collector Current, IC -- mA 1000 f T -- IC Gain-Bandwidth Product, f T -- MHz 5 3 2 Gain-Bandwidth Product, f T -- MHz 7 2SA1179 VCE= --6V 7 5 3 2 2SC2812 VCE=6V 100 7 5 3 2 --1.0 100 7 5 3 2 1.0 2 3 5 7 2 3 5 7 100 2 3 2 3 5 7 --10 2 3 5 7 --100 2 3 5 10 Collector Current, IC -- mA 2 IT12006 2 Cob -- VCB Collector Current, IC -- mA IT12007 Cob -- VCB 2SA1179 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 10 7 5 3 2 10 7 5 3 2 2SC2812 f=1MHz 1.0 7 5 3 2 1.0 7 5 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- V --1.0 7 7 --100 IT12008 3 5 7 1.0 2 3 5 7 10 2 3 5 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 7 100 IT12009 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 2SA1179 IC / IB=10 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 1.0 2SC2812 IC / IB=10 --0.1 7 5 3 2 --0.01 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA IT12010 Collector Current, IC -- mA IT12011 No.3218-3/5 2SA1179 / 2SC2812 2 10 hie, hre, hfe, hoe -- VCE ho e hfe 2 10 5 3 2 hie, hoe -- IC 2SC2812 f=1MHz 5 3 5 3 5 hfe -- ✕10 hre -- ✕104 hie -- kΩ hoe -- μS 2 1.0 2 1.0 10 7 5 3 2 10 7 5 3 2 V hr e 5 3 2 0.1 5 5 2SA1179 f=270MHz IC= --1mA 7 --1.0 2 3 5 7 --10 2 3 3 2 0.1 IT12012 5 3 1.0 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Emitter Voltage, VCE -- V 5 3 2 10 hie, hre, hfe, hoe -- IC hi e Collector Current, IC -- mA 5 3 2 1.0 10 IT12013 7 5 hre, hfe -- IC 2 h oe 10 5 3 2 hfe hr eV CE =3 V 6V 2SC2812 3 =3V, 6V h fe V CE 2 hfe -- ✕10 hre -- ✕104 hre -- ✕104 5 hie -- kΩ hoe -- μS 1.0 7 5 3 2 100 7 5 3 2 2 1.0 5 3 2 0.1 5 hr e 1.0 5 2SA1179 f=270MHz VCE= --6V 7 --0.1 2 3 5 7 --1.0 2 3 3 2 0.1 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- mA 250 IT12014 PC -- Ta Collector Current, IC -- mA 10 10 IT12015 7 2SA1179 / 2SC2812 Collector Dissipation, PC -- mW 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT12016 No.3218-4/5 hfe 3 hoe -- μS hie -- kΩ hie 3 hi eV CE =3 V, 6 h oe V =3 CE V 2 6V 2SA1179 / 2SC2812 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No.3218-5/5