2SA1418_10

Ordering number : EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 Applications • High-Voltage Switching, Preriver Applications Color TV audio output, inverter. Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1418 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Conditions Ratings (--)180 (--)160 (--)6 (--)0.7 (--)1.5 500 1.3 150 --55 to +150 Unit V V V A A mW W °C °C Marking 2SA1418 : AD 2SC3648 : CD Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010CB TK IM / O3103TN (KT)/71598HA (KT)/3277KI/2255MW, TS No.1788-1/5 2SA1418 / 2SC3648 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)120V, IE=0A VEB=(-)4V, IC=0A VCE=(--)5V, IC=(-)100mA VCE=(--)5V, IC=(--)10mA VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(-)250mA, IB=(-)25mA IC=(-)250mA, IB=(-)25mA IC=(-)10μA, IE=0A IC=(-)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)180 (--)160 (--)6 (60)50 (900)1000 (60)60 100* 90 120 (11)8 (--0.2)0.12 (--)0.85 (-0.5)0.4 (--)1.2 MHz pF V V V V V ns ns ns Ratings min typ max (--)0.1 (--)0.1 400* Unit μA μA *: The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit IB1 IB2 RB VR 50Ω + 100μF --5V 333Ω + 470μF 100V PW=20μs D.C.≤1% INPUT IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) No.1788-2/5 2SA1418 / 2SC3648 --800 --700 IC -- VCE From top --200mA --180mA --160mA --140mA --120mA 800 IC -- VCE From top 100mA 90mA 80mA 70mA 60mA 2SC3648 50mA 40mA 30mA 2SA1418 700 Collector Current, IC -- mA --600 --500 --400 --300 --200 --100 Collector Current, IC -- mA mA --100 --80mA --60mA --40mA --20mA 600 500 400 300 200 100 20mA 10mA IB=0mA 0 0 --200 --400 --600 --800 --1000 ITR03558 1000 0 0 200 400 IB=0mA 600 800 1000 ITR03559 Collector-to-Emitter Voltage, VCE -- mV --800 --700 IC -- VCE Collector-to-Emitter Voltage, VCE -- mV IC -- VCE 2SA1418 2SC3648 Collector Current, IC -- mA --600 --500 --400 --300 --200 --100 0 0 --5 Collector Current, IC -- mA A .0m -4.5mA A --4.0m mA --3.5 A --3.0m 2.5mA ---2.0mA --1.5mA 800 600 A 3.5m 3.0mA 2.5mA 2.0mA 400 4. 0m A 1.5mA --1.0mA --0.5mA 1.0mA 200 0.5mA --60 --70 --80 0 0 IB=0mA --10 --20 --30 --40 --50 IB=0mA 10 20 30 40 50 60 70 80 Collector-to-Emitter Voltage, VCE -- V 1000 ITR03560 10 7 5 3 2 1.0 7 5 3 2 IC -- VBE Collector-to-Emitter Voltage, VCE -- V ITR03561 VCE(sat) -- IC Collector Current, IC -- mA 800 600 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA1418 / 2SC3648 VCE=5V For PNP, minus sign is omitted 2SA1418 / 2SC3648 IC / IB=10 3648 8 2SC 400 141 2SA 2 0.1 7 5 3 1 SA 41 8 200 2SC 364 8 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR03562 2 For PNP, minus sign is omitted 3 5 7 10 2 3 5 7 100 2 3 5 Base-to-Emitter Voltage, VBE -- V 1000 7 5 3 Collector Current, IC -- mA 1000 7 5 3 7 1000 2 ITR03563 hFE -- IC hFE -- IC 2SC3648 Pulse 2SA1418 Pulse DC Current Gain, hFE DC Current Gain, hFE 2 2 VC 10V 2V =-V CE 100 7 5 3 2 10 7 5 3 3 5 7 100 7 5 3 2 10 7 5 5V =2 E --10V --5V 5 7 --1000 2 V --10 23 5 7 --100 23 Collector Current, IC -- mA 3 3 5 7 10 2 3 5 7 100 2 3 5 ITR03564 Collector Current, IC -- mA 7 1000 2 ITR03565 No.1788-3/5 2SA1418 / 2SC3648 5 f T -- IC 2SA1418 5 f T -- IC 2SC3648 Gain-Brandwidth Product, f T -- MHz Gain-Brandwidth Product, f T -- MHz 3 2 3 2 VCE=5V V CE= 10V 10V 100 7 5 3 2 5V 100 7 5 3 2 10 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7 --1000 ITR03566 10 5 7 10 2 3 5 7 100 2 3 5 100 7 Cob -- VCB Collector Current, IC -- mA 3 2 1.0 7 5 3 2 0.1 7 5 3 2 7 1000 ITR03567 ASO 2SA1418 / 2SC3648 f=1MHz ICP=1.5A IC=0.7A 2SA1418 / 2SC3648 s 1m s m 10 Output Capacitance, Cob -- pF 5 3 2 Collector Current, IC -- A 10 0m s 10 7 5 3 2 2SA 2SC DC 141 8 8 op era tio n 364 For PNP, minus sign is omitted 1.0 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 1.8 1.6 7 100 2 ITR03568 0.01 7 5 1.0 Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP, minus sign is omitted 2 3 5 7 10 2 3 5 7 100 2 3 PC -- Ta Collector-to-Emitter Voltage, VCE -- V ITR03570 Collector Dissipation, PC -- W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 M ou nte do na ce ram ic bo ard No h (2 eat s 50 ink mm 2 ✕0 .8 mm ) 160 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C ITR03569 No.1788-4/5 2SA1418 / 2SC3648 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1788-5/5