2SA1419

Ordering number : EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 Features • • • PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Conditions Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Marking 2SA1419 : AE 2SC3649 : CE Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 31010CB TK IM / O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/5 2SA1419 / 2SC3649 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)120V, IE=0A VEB=(-)4V, IC=0A VCE=(--)5V, IC=(-)100mA VCE=(--)5V, IC=(--)10mA VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(-)500mA, IB=(-)50mA IC=(-)500mA, IB=(-)50mA IC=(-)10μA, IE=0A IC=(-)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--)180 (--)160 (--)6 (40)40 (0.7)1.2 (40)80 100* 80 120 (22)14 (--200)130 (-500)450 (--)0.85 (--)1.2 MHz pF mV V V V V ns μs ns Ratings min typ max (--)1 (--)1 400* Unit μA μA *: The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω + 100μF --5V + 470μF 100V IB1 IB2 RB RL IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) No.2007-2/5 2SA1419 / 2SC3649 --1.8 --1.6 IC -- VCE 2SA1419 1.8 1.6 IC -- VCE 2SC3649 Collector Current, IC -- A --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 A --80m 60mA -A --40m A --20m 0mA --1 --5mA --2mA --1mA Collector Current, IC -- A --1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 50mA 40mA 30mA 20mA 10mA 5m A 2mA 1mA IB=0mA --1 --2 --3 --4 --5 ITR03571 IB=0mA 0 0 1 2 3 4 5 ITR03572 Collector-to-Emitter Voltage, VCE -- V --1.0 IC -- VCE Collector-to-Emitter Voltage, VCE -- V 1.0 IC -- VCE Collector Current, IC -- A Collector Current, IC -- A --0.8 --0.6 A --5.0m --4.5mA --4.0mA --3.5mA --3.0mA --2.5mA --2.0mA 0.8 4.5 mA 5.0 m 2SA1419 4.0mA 3.5mA 3.0mA 2.5mA 2SC3649 0.6 A 2.0mA 0.4 --0.4 --1.5mA 1.5mA --1.0mA --0.2 1.0mA 0.2 --0.5mA 0 0 0.5mA 0 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V IB=0mA 0 10 20 30 40 50 ITR03574 --50 ITR03573 --1.6 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1.6 IC -- VBE 2SA1419 VCE=--5V Collector Current, IC -- A 1.2 2SC3649 VCE=5V Collector Current, IC -- A --1.2 --0.8 0.8 5°C 25°C --25°C --0.4 0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03575 0 0 0.2 0.4 0.6 Ta= 75 °C 25°C --25°C 0.8 Ta= 7 1.0 1.2 ITR03576 1000 7 5 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC 2SA1419 VCE=--5V 2SC3649 VCE=5V Ta=75°C DC Current Gain, hFE 2 Ta=75°C DC Current Gain, hFE 3 3 2 100 7 5 3 2 25°C --25°C 100 7 5 3 2 25°C --25°C 10 --5 --7--0.01 --2 --3 --5 --7--0.1 --2 --3 --5 --7 --1.0 --2 --3 ITR03577 Collector Current, IC -- A 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A ITR03578 No.2007-3/5 2SA1419 / 2SC3649 5 f T -- IC 2SA1419 / 2SC3649 100 7 Cob -- VCB 2SA1419 / 2SC3649 Gain-Bandwidth Product, f T -- MHz 3 2 2SC3649 Output Capacitance, Cob -- pF 5 2SA1419 100 7 5 3 2 3 2 2SA 141 9 2SC 10 7 5 364 9 For PNP, minus sign is omitted 10 0.01 2 3 5 7 0.1 2 3 5 7 For PNP, minus sign is omitted 3 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- A 3 2 2 1.0 ITR03579 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 2 7 100 ITR03580 VCE(sat) -- IC 2SA1419 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SC3649 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 3 2 1000 7 5 3 2 --100 7 5 3 2 7 25°C °C Ta=75 --25°C 100 7 5 3 25°C Ta=75°C --25°C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --0.01 2 3 --0.1 2 3 5 Collector Current, IC -- A 5 7 7 --1.0 2 3 2 ITR03581 10 7 --10 7 VBE(sat) -- IC Collector Current, IC -- A ITR03582 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SA1419 IC / IB=10 2SC3649 IC / IB=10 5 3 2 3 2 Ta=--25°C --1.0 7 5 Ta=--25°C 1.0 7 5 25°C 75°C 25°C 7 0.01 2 3 5 7 0.1 2 75°C 3 5 7 1.0 2 3 3 7 --0.01 2 3 23 5 --0.1 Collector Current, IC -- A 5 7 7 --1.0 2 3 3 ITR03583 1.8 Collector Current, IC -- A ITR03584 5 3 2 ASO ICP=2.5A IC=1.5A PC -- Ta 2SA1419 / 2SC3649 2SA1419 / 2SC3649 Collector Dissipation, PC -- W 1 10 ms m s 10 0m s DC op era 1.6 1.4 1.2 1.0 0.8 0.6 Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 M ou nt ed on ac tio er am n ic bo ar d( 25 No h 0.4 0.2 0 0m eat s ink m2 ✕ For PNP, minus sign is omitted Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 0.8 m m ) 160 0 20 40 60 80 100 120 140 Collector-to-Emitter Voltage, VCE -- V ITR03585 Ambient Temperature, Ta -- °C ITR03586 No.2007-4/5 2SA1419 / 2SC3649 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.2007-5/5