2SA1965-S

Ordering number : ENA1085 2SA1965-S SANYO Semiconductors DATA SHEET 2SA1965-S Features • • • • PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Ultrasmall-sized package permitting applied sets to be made small and slim. Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings --15 --10 --5 --100 --200 --20 150 150 --55 to +150 Unit V V V mA mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-12V, IE=0A VEB=--4V, IC=0A VCE=-2V, IC=-5mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz 200 600 5.0 Ratings min typ max --0.1 --0.1 600 MHz pF Unit μA μA Marking : KA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70208LA TI IM TC-00001495 No. A1085-1/4 2SA1965-S Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage On Resistance Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Ron Conditions IC=-10mA, IB=--1mA IC=-10mA, IB=--1mA IC=- μA, IE=0A -10 IC=-1mA, RBE=∞ IE=--10μA, IC=0A IB=--3mA, f=1MHz --15 --10 --5 1.2 Ratings min typ --16 -0.75 max --35 --1.1 Unit mV V V V V Ω Package Dimensions unit : mm (typ) 7029-002 Top View 1.4 0.3 0.25 3 1.4 0.8 1 0.3 2 0.2 0.45 0.1 1 2 0.07 0.6 3 Bottom View 0.07 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP --100 IC -- VCE --500μA μA --350 --300μA --10 IC -- VCE A --20μ A --18μ --16μA --14μA --12μA Collector Current, IC -- mA A --400μ --200μA --150μA --60 Collector Current, IC -- mA --80 μA --450 --250μA --8 --6 --10μA --4 --40 --100μA --8μA --20 --50μA --2 --6μA --4μA --2μA 0 0 --0.4 --0.8 --1.2 --1.6 IB=0μA --2.0 0 0 --1 --2 --3 --4 IB=0μA --5 Collector-to-Emitter Voltage, VCE -- V ITR05035 Collector-to-Emitter Voltage, VCE -- V ITR05036 No. A1085-2/4 2SA1965-S --120 IC -- VBE VCE= --2V 2 hFE -- IC VCE= --2V --100 Collector Current, IC -- mA 1000 DC Current Gain, hFE 7 5 --80 Ta=75°C 25°C --25°C --60 Ta=75°C 25°C --25°C 3 2 --40 --20 100 7 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 ITR05037 5 7 --1.0 2 3 5 7 --10 2 3 5 Base-to-Emitter Voltage, VBE -- V 2 f T -- IC Collector Current, IC -- mA 2 7 --100 2 ITR05038 Cob -- VCB VCE= --5V f=1MHz Gain-Brandwidth Product, f T -- MHz 1000 7 5 Output Capacitance, Cob -- pF 10 7 5 3 2 3 2 100 7 5 7 --1.0 2 3 5 7 --10 2 3 5 1.0 Collector Current, IC -- mA 2 7 --100 2 ITR05039 2 7 --1.0 2 3 5 7 --10 2 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V ITR05040 VBE(sat) -- IC 25°C IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.1 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV --1.0 7 5 Ta= --25°C 75°C ° 25 C 5° C =7 5° Ta --2 C 3 2 --0.1 7 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2 Collector Current, IC -- mA 2 ITR05041 160 150 140 Ron -- IB Collector Current, IC -- mA ITR05042 PC -- Ta f=1MHz 10 ON Resistance, Ron -- Ω IN 7 5 1kΩ 10kΩ IB OUT Collector Dissipation, PC -- mW 120 100 80 60 40 20 0 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 2 --10 ITR05043 0 20 40 60 80 100 120 140 160 Base Current, IB -- mA Ambient Temperature, Ta -- °C ITR05044 No. A1085-3/4 2SA1965-S SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1085-4/4