2SA2012_11

Ordering number : EN6306A 2SA2012 / 2SC5565 SANYO Semiconductors DATA SHEET 2SA2012 / 2SC5565 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized package permitting applied sets to be made small and slim. High allowable power dissipation. Specifications ( ) : 2SA2012 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C Conditions Ratings (--30)40 (--)30 (--)5 (--)5 (--)8 (--)600 1.3 3.5 150 --55 to +150 Unit V V V A A mA W W °C °C Marking 2SA2012 : AS 2SC5565 : FB Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. http://semicon.sanyo.com/en/network 40710EA TK IM / 21400TS (KOTO) TA-2520 No.6306-1/5 2SA2012 / 2SC5565 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)30V, IE=0A VEB=(-)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(-)500mA VCB=(--)10V, f=1MHz IC=(-)1.5A, IB=(-)30mA IC=(-)2.5A, IB=(-)125mA IC=(-)1.5A, IB=(-)30mA IC=(-)10μA, IE=0A IC=(-)1mA, RBE=∞ IE=(-)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--30)40 (--)30 (--)5 (50)30 (270)300 (25)15 200 (350)420 (30)20 (-140)125 (-210)190 (-)170 (--)0.83 (--)260 (--)1.2 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF mV mV V V V V ns ns ns Unit μA μA Package Dimensions unit : mm (typ) 7007B-004 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω RB + 100μF VBE=--5V + 470μF VCC=12V IB1 IB2 OUTPUT 24Ω IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed) No.6306-2/5 2SA2012 / 2SC5565 --5 IC -- VCE 2SA2012 5 IC -- VCE 2SC5565 90mA Collector Current, IC -- A Collector Current, IC -- A --4 0 --1 --90mA 0m A --80mA --70mA --60mA --50mA --40mA --30mA --20mA 10 0m A 4 80mA 70mA 60mA 50mA 40mA 30mA --3 3 --2 2 20mA 10mA --10mA --1 1 0 0 --0.2 --0.4 --0.6 --0.8 IB=0mA --1.0 IT00134 0 0 IB=0mA 0.2 0.4 0.6 0.8 1.0 IT00135 Collector-to-Emitter Voltage, VCE -- V --5.0 --4.5 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 5.0 4.5 IC -- VBE 2SA2012 VCE=--2V 2SC5565 VCE=2V Collector Current, IC -- A --3.5 --3.0 --2.5 --2.0 --1.5 Collector Current, IC -- A --4.0 4.0 3.5 3.0 2.5 2.0 1.5 25°C 25°C °C Ta=7 5 --25°C --0.5 0 0 --0.2 --0.4 0.5 0 --1.0 --1.2 --1.4 0 0.2 0.4 --0.6 --0.8 0.6 0.8 --25°C 1.0 --1.0 1.0 Ta=7 5 °C 1.2 1.4 IT00137 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT00136 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2012 VCE=--2V Ta=75°C 7 5 Ta=75°C 2SC5565 VCE=2V DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 25°C --25°C 25°C --25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 1000 5 7 --10 IT00138 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 f T -- IC Collector Current, IC -- A 1000 5 7 10 IT00139 f T -- IC Gain-Brandwidth Product, f T -- MHz 5 3 2 Gain-Brandwidth Product, f T -- MHz 7 2SA2012 VCE=--10V 7 5 3 2 2SC5565 VCE=10V 100 7 5 3 2 100 7 5 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00148 10 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A Collector Current, IC -- A 5 7 10 IT00149 No.6306-3/5 2SA2012 / 2SC5565 5 3 Cob -- VCB 2SA2012 f=1MHz 5 3 Cob -- VCB 2SC5565 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 2 100 7 5 3 2 10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V --1000 7 5 3 2 IT00146 1000 Collector-to-Base Voltage, VCB -- V IT00147 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2012 IC / IB=20 VCE(sat) -- IC 2SC5565 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 100 7 5 3 2 --100 7 5 3 2 --10 7 5 --0.01 = Ta °C 75 --2 5°C 25°C = Ta 75 °C 25°C 5 --2 °C 10 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --1000 7 5 7 --10 IT00140 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VCE(sat) -- IC Collector Current, IC -- A 1000 7 5 7 10 IT00142 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 2SA2012 IC / IB=50 5 3 2 2SC5565 IC / IB=50 --100 7 5 3 2 100 7 5 3 2 =7 Ta 5°C -- C 25° 25°C Ta °C --25 2 3 5 7 0.1 =7 5°C 25°C --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --10 7 5 7 --10 IT00141 10 0.01 2 3 5 7 1.0 2 3 VBE(sat) -- IC Collector Current, IC -- A 10 7 5 7 10 IT00143 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SA2012 IC / IB=50 2SC5565 IC / IB=50 5 3 2 --1.0 7 5 3 2 Ta=--25°C 75°C 25°C 1.0 7 5 3 2 Ta=--25°C 75°C 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT00144 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT00145 No.6306-4/5 2SA2012 / 2SC5565 2 10 7 5 ASO ICP=8A IC=5A 100ms 10 1ms ms 2.0 PC -- Ta 2SA2012 / 2SC5565 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 Collector Dissipation, PC -- W 10 s 0μ Collector Current, IC -- A 1.5 1.3 0μ 50 DC op M s era ou tio nte n 1.0 do na ce ram ic bo ard 2SA2012 / 2SC5565 Tc=25°C Single pulse For PNP, minus sign is omitted 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.5 (25 0m m2 ✕0 .8 mm ) 160 0 0 20 40 60 80 100 120 140 IT00150 0.1 Collector-to-Emitter Voltage, VCE -- V 4.0 3.5 Ambient Temperature, Ta -- °C IT00151 PC -- Tc 2SA2012 / 2SC5565 Collector Dissipation, PC -- W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT01532 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2010. Specifications and information herein are subject to change without notice. PS No.6306-5/5