2SA2013

Ordering number : ENN6307B 2SA2013 / 2SC5566 2SA2013 / 2SC5566 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. High allowable power dissipation. Specifications ( ) : 2SA2013 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)4 (--)7 (--)600 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA Ratings min typ max (--)1 (--)1 200 (360)400 560 MHz Unit µA µA Marking : 2SA2013 : AT 2SC5566 : FC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405EA MS IM TB-00001405 / 52501 TS KT TA-3260 No.6307-1/5 2SA2013 / 2SC5566 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10µA, IE=0A IC=(--)100µA, RBE=0Ω IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)100 (--50)100 (--)50 (--)6 (30)35 (230)300 (15)20 Ratings min typ (24)15 (--105)85 (--180)130 (--200)150 (--340)225 (--)0.89 (--)1.2 max Unit pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7007-004 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR10 50Ω + 100µF + 470µF VCC=25V RB RL 25Ω 2.5 1.0 4.0 VBE= --5V 1 0.4 0.5 1.5 2 3 0.4 IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. 3.0 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP --90mA Collector Current, IC -- A --3 --10 0mA Collector Current, IC -- A 70 80 90mA mA mA --4 IC -- VCE 2SA2013 --80mA --70mA --60mA --50mA A --40m mA 30 4 IC -- VCE A 60m 50mA 40mA 30mA -- 3 --20mA 20mA 100mA --2 2 10mA --10mA --1 1 0 0 --0.4 --0.8 --1.2 --1.6 IB=0mA --2.0 IT00152 0 0 2SC5566 0.4 0.8 1.2 1.6 IB=0mA 2.0 IT00153 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.6307-2/5 2SA2013 / 2SC5566 --4.0 --3.5 IC -- VBE 2SA2013 VCE= --2V Collector Current, IC -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC -- VBE 2SC5566 VCE=2V Collector Current, IC -- A --3.0 --2.5 --2.0 --1.5 Ta=7 5°C 25°C --25° C --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 Ta=7 5°C 25°C --25°C 0.8 1.0 1.2 1.4 IT00155 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT00154 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2013 VCE= --2V DC Current Gain, hFE Ta=75°C 25°C --25°C 7 5 3 2 Ta=75°C --25°C 2SC5566 VCE=2V DC Current Gain, hFE 3 2 25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00156 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00157 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2013 IC / IB=20 VCE(sat) -- IC 2SC5566 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Ta --25°C °C =75 25° C 7 Ta= 5°C --25°C 25° C Collector Current, IC -- A --10000 7 5 3 2 5 7 --10 IT00158 Collector Current, IC -- A 10000 5 7 10 IT00160 VCE(sat) -- IC 2SA2013 IC / IB=50 25°C --2 5°C 75 °C VCE(sat) -- IC 2SC5566 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 Ta = = Ta °C 25°C 75 --2 5°C Ta=7 C --25° 2 3 5 7 0.1 2 3 5° C 5°C Ta=7 --25°C 25° 2 3 C 25 °C 5 7 --0.1 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT00159 10 0.01 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT00161 No.6307-3/5 2SA2013 / 2SC5566 --10 7 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V 10 VBE(sat) -- IC 2SC5566 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 2SA2013 IC / IB=50 7 5 3 2 1.0 7 5 3 2 0.1 0.01 --1.0 7 5 3 2 Ta= --25°C Ta= --25°C 75°C 25°C 75°C 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 5 7 --10 IT00162 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB Collector Current, IC -- A 5 5 7 10 IT00163 Cob -- VCB 2SA2013 f=1MHz Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 10 7 5 3 2 2SC5566 f=1MHz Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 7 --100 IT00164 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 1000 7 Collector-to-Base Voltage, VCB -- V 1000 5 7 100 IT00165 f T -- IC f T -- IC 2SC5566 VCE=10V Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 5 3 2 2SA2013 VCE= --10V 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Collector Current, IC -- A 2 10 7 5 5 7 --10 IT00166 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 2.0 5 7 10 IT00167 ASO ICP=7A IC=4A 100ms 50 0µ Collector Dissipation, PC -- W PC -- Ta 2SA2013 / 2SC5566 Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 1ms ms DC 10 0µ s s 1.5 1.3 M op ou era nte tio n 1.0 do na ce ram ic bo ard 0.01 0.1 2SA2013 / 2SC5566 Tc=25°C Single pulse For PNP, the minus sign is omitted. 2 3 5 7 1.0 2 3 5 7 10 2 3 0.5 (25 0m m2 !0 .8m m) 160 IT00169 0 5 7 100 IT00168 0 20 40 60 80 100 120 140 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C No.6307-4/5 2SA2013 / 2SC5566 4.0 3.5 PC -- Tc 2SA2013 / 2SC5566 Collector Dissipation, PC -- W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 Case Temperature, Tc -- °C 60 80 100 120 140 160 IT01533 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.6307-5/5