2SA2016

Ordering number : ENN6309B 2SA2016 / 2SC5569 2SA2016 / 2SC5569 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. High allowable power dissipation. Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)7 (--)10 (--)1.2 1.3 3.5 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA Ratings min typ max (--)0.1 (--)0.1 200 (290)330 560 MHz Unit µA µA Marking : 2SA2016 : AW 2SC5569 : FF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405EA MS IM TB-00001406 / 52501 TS KT TA-3259 No.6309-1/5 2SA2016 / 2SC5569 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)10V, f=1MHz IC=(--)3.5A, IB=(-)175mA IC=(--)2A, IB=(--)40mA IC=(--)2A, IB=(--)40mA IC=(--)10µA, IE=0A IC=(--)100µA, RBE=0Ω IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)100 (--50)100 (--)50 (--)6 (40)30 (225)420 25 Ratings min typ (50)28 (--230)160 (--390)240 (-240)110 (--400)170 (--)0.83 (--)1.2 max Unit pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7008-003 Top View 4.5 1.6 1.5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100µF + 470µF VCC=25V RB RL 2.5 1.0 4.0 VBE= --5V 1 0.4 0.5 1.5 2 3 0.4 IC=20IB1= --20IB2=2.5A For PNP, the polarity is reversed. 3.0 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP --7 IC -- VCE 2SA2016 --90mA --80mA --70mA --60mA A 7 IC -- VCE 80 m 70mA --6 6 Collector Current, IC -- A Collector Current, IC -- A --5 --20mA --3 3 100m A --4 0 --1 0m A --50m mA --40 --30mA 5 90mA 60mA 50mA 40mA 30mA A 4 20mA 10mA --2 --10mA 2 --1 1 0 0 --0.4 --0.8 --1.2 IB=0mA --1.6 --2.0 IT00206 0 0 2SC5569 0.4 0.8 1.2 1.6 IB=0mA 2.0 IT00207 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.6309-2/5 2SA2016 / 2SC5569 --8 --7 IC -- VBE 2SA2016 VCE= --2V Collector Current, IC -- A 8 7 6 5 4 3 2 1 0 IC -- VBE 2SC5569 VCE=2V Collector Current, IC -- A --6 --5 --4 --3 --2 --1 0 0 Ta= 75° 2 5 °C C --25° C --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 1000 7 5 --1.2 --1.4 IT00208 1000 0 0.2 0.4 Ta=7 5°C 25°C --25° C 0.6 0.8 1.0 1.2 1.4 IT00209 hFE -- IC Base-to-Emitter Voltage, VBE -- V hFE -- IC 2SA2016 VCE= --2V DC Current Gain, hFE 7 5 3 2 Ta=75°C 25°C --25°C 2SC5569 VCE=2V DC Current Gain, hFE 3 2 Ta=75°C 25°C --25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --1000 5 7 --10 IT00210 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00211 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2016 IC / IB=20 VCE(sat) -- IC 2SC5569 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 5°C Ta=7 °C --25 25°C 7 Ta= C --25° 5°C C 25° --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --10000 7 5 3 2 5 7 --10 IT00212 Collector Current, IC -- A 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 5 7 10 IT00214 VCE(sat) -- IC 2SA2016 IC / IB=50 VCE(sat) -- IC 2SC5569 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --100 7 5 3 2 --10 --0.01 2 3 7 Ta= --25°C 5 7 --0.1 2 5°C 25° C Ta = --1000 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV °C 25° C --2 5 75 °C 5°C Ta=7 C --25° 2 3 C 25° 5 7 1.0 2 3 5 7 10 IT00215 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT00213 Collector Current, IC -- A No.6309-3/5 2SA2016 / 2SC5569 --10000 VBE(sat) -- IC 2SA2016 IC / IB=50 10000 VBE(sat) -- IC 2SC5569 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 7 5 3 2 7 5 3 2 --1000 7 5 3 2 Ta= --25°C 1000 7 5 3 2 Ta= --25°C 75°C 25°C 75°C 25°C --100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 3 5 7 --10 IT00216 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB Collector Current, IC -- A 5 5 7 10 IT00217 Cob -- VCB 2SA2016 f=1MHz Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 10 7 5 3 2 2SC5569 f=1MHz Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 1000 7 IT00218 1000 Collector-to-Base Voltage, VCB -- V IT00219 f T -- IC f T -- IC 2SC5569 VCE=10V Gain-Bandwidth Product, f T -- MHz 5 3 2 Gain-Bandwidth Product, f T -- MHz 2SA2016 VCE= --10V 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00220 10 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 2 10 7 5 Collector Current, IC -- A 2.0 5 7 10 IT00221 ASO ICP=10A IC=7A DC PC -- Ta 2SA2016 / 2SC5569 100ms 1m Collector Current, IC -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 ms Collector Dissipation, PC -- W s s 0µ 50 10 0µ s 1.5 1.3 op M era ou tio nte n 1.0 do na ce ram ic bo ard 0.01 0.1 2SA2016 / 2SC5569 Tc=25°C Single pulse For PNP, the minus sign is omitted. 2 3 5 7 1.0 2 3 5 7 10 2 3 0.5 (25 0m m2 !0 .8m m) 160 IT00223 0 5 7 100 IT00222 0 20 40 60 80 100 120 140 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C No.6309-4/5 2SA2016 / 2SC5569 4.0 3.5 PC -- Tc 2SA2016 / 2SC5569 Collector Dissipation, PC -- W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 Case Temperature, Tc -- °C 60 80 100 120 140 160 IT01535 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.6309-5/5